公开(公告)号：US12009433B2

公开(公告)日：2024-06-11

申请号：US16001837

申请日：2018-06-06

Applicant: Intel Corporation

Inventor： Van H. Le ,  Inanc Meric ,  Gilbert Dewey ,  Sean Ma ,  Abhishek A. Sharma ,  Miriam Reshotko ,  Shriram Shivaraman ,  Kent Millard ,  Matthew V. Metz ,  Wilhelm Melitz ,  Benjamin Chu-Kung ,  Jack Kavalieros

IPC: H01L29/786 ,  H01L21/28 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/78678 ,  H01L21/28194 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/7869

Abstract: Embodiments disclosed herein include thin film transistors and methods of forming such thin film transistors. In an embodiment, the thin film transistor may comprise a substrate, a gate electrode over the substrate, and a gate dielectric stack over the gate electrode. In an embodiment, the gate dielectric stack may comprise a plurality of layers. In an embodiment, the plurality of layers may comprise an amorphous layer. In an embodiment, the thin film transistor may also comprise a semiconductor layer over the gate dielectric. In an embodiment, the semiconductor layer is a crystalline semiconductor layer. In an embodiment, the thin film transistor may also comprise a source electrode and a drain electrode.