公开(公告)号：US08563959B2

公开(公告)日：2013-10-22

申请号：US13624374

申请日：2012-09-21

Applicant: Intermolecular, Inc.

Inventor： Tony Chiang ,  Chi-l Lang ,  Prashant Phatak

IPC: H01L47/00

CPC classification number: H01L45/1608 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/148 ,  H01L45/149 ,  H01L45/1616 ,  H01L45/1641

Abstract: A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.

公开(公告)号：US08927415B2

公开(公告)日：2015-01-06

申请号：US14134219

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Chi-l Lang

IPC: H01L21/00 ,  H01L21/768 ,  C23C14/04 ,  C23C14/06 ,  C23C14/18 ,  C23C14/58 ,  H01L21/3205 ,  H01L23/532 ,  H01L21/02

CPC classification number: H01L21/76846 ,  C23C14/042 ,  C23C14/0605 ,  C23C14/185 ,  C23C14/5806 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02672 ,  H01L21/32051 ,  H01L21/76823 ,  H01L21/76855 ,  H01L21/76867 ,  H01L21/76871 ,  H01L23/53238 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments described herein provide interconnect barrier layers and methods for forming such barriers. A dielectric body having a trench formed in a surface thereof is provided. A first layer is formed above the dielectric body within the trench. The first layer includes amorphous carbon. A second layer is formed above the first layer. The second layer includes a metal. The dielectric body, the first layer, and the second layer are heated to convert at least some of the amorphous carbon to graphene.

Abstract translation: 本文所述的实施例提供了用于形成这种障碍物的互连阻挡层和方法。 提供具有形成在其表面中的沟槽的电介质体。 第一层形成在沟槽内的绝缘体的上方。 第一层包括无定形碳。 在第一层上方形成第二层。 第二层包括金属。 电介质体，第一层和第二层被加热以将至少一些无定形碳转化为石墨烯。