公开(公告)号：US20150279670A1

公开(公告)日：2015-10-01

申请号：US14549158

申请日：2014-11-20

Applicant: Intermolecular Inc.

Inventor： Seon-Mee Cho ,  Stuart Brinkley ,  Anh Duong ,  Majid Gharghi ,  Sang Lee ,  Minh Huu Le ,  Karl Littau ,  Jingang Su

IPC: H01L21/02 ,  H01L29/786

CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869

Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Abstract translation: 使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。 膜在包括氧和氩的气氛中沉积。 约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。 第二靶标包括氧化锌的化合物。 膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

公开(公告)号：US09202690B2

公开(公告)日：2015-12-01

申请号：US14137717

申请日：2013-12-20

Applicant: Intermolecular, Inc. ,  LG Display Co., Ltd.

Inventor： Sang Lee ,  Stuart Brinkley ,  Yoon-Kyung Chang ,  Seon-Mee Cho ,  Min-Cheol Kim ,  Kwon-Sik Park ,  Woosup Shin

IPC: H01L21/00 ,  H01L21/16 ,  H01L29/10 ,  H01L29/12 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L21/02667 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/7869

Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. An IGZO layer is formed above the substrate. The IGZO layer is annealed in an environment consisting essentially of nitrogen gas.

Abstract translation: 本文所述的实施方案提供了形成晶体铟镓锌氧化物（IGZO）的方法。 提供基板。 在基板上形成IGZO层。 IGZO层在基本上由氮气组成的环境中退火。

公开(公告)号：US20150179448A1

公开(公告)日：2015-06-25

申请号：US14137717

申请日：2013-12-20

Applicant: LG Display Co., Ltd. ,  Intermolecular, Inc.

Inventor： Sang Lee ,  Stuart Brinkley ,  Yoon-Kyung Chang ,  Seon-Mee Cho ,  Min-Cheol Kim ,  Kwon-Sik Park ,  Woosup Shin

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/02667 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/7869

Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. An IGZO layer is formed above the substrate. The IGZO layer is annealed in an environment consisting essentially of nitrogen gas.

Abstract translation: 本文所述的实施方案提供了形成晶体铟镓锌氧化物（IGZO）的方法。 提供基板。 在基板上形成IGZO层。 IGZO层在基本上由氮气组成的环境中退火。

公开(公告)号：US09337030B2

公开(公告)日：2016-05-10

申请号：US14549158

申请日：2014-11-20

Applicant: Intermolecular Inc.

Inventor： Seon-Mee Cho ,  Stuart Brinkley ,  Anh Duong ,  Majid Gharghi ,  Sang Lee ,  Minh Huu Le ,  Karl Littau ,  Jingang Su

IPC: H01L21/02 ,  H01L29/786

CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869

Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Abstract translation: 使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。 膜在包括氧和氩的气氛中沉积。 约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。 第二靶标包括氧化锌的化合物。 膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

公开(公告)号：US20150179446A1

公开(公告)日：2015-06-25

申请号：US14137749

申请日：2013-12-20

Applicant: LG DISPLAY CO., LTD. ,  INTERMOLECULAR, INC.

Inventor： Sang Lee ,  Stuart Brinkley ,  Yoon-Kyung Chang ,  Seon-Mee Cho ,  Min-Cheol Kim ,  Kwon-Sik Park ,  Woosup Shin

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L29/7869

Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A layer is formed above the substrate using a PVD process. The layer includes indium, gallium, zinc, or a combination thereof. The PVD process is performed in a gaseous environment having a pressure of between about 1 mT and about 5 mT and including between about 20% and about 100% oxygen gas. The PVD process may be performed at a processing temperature between about 25° C. and about 400° C. The duty cycle of the PVD process may be between about 70% and about 100%.

Abstract translation: 本文所述的实施方案提供了形成晶体铟镓锌氧化物（IGZO）的方法。 提供基板。 使用PVD工艺在衬底上形成一层。 该层包括铟，镓，锌或其组合。 PVD工艺在压力为约1mT至约5mT，包括约20％至约100％氧气的气态环境中进行。 PVD工艺可以在约25℃至约400℃的加工温度下进行.RPC工艺的占空比可以在约70％至约100％之间。