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1.发明申请公开(公告)号：US20120322181A1
公开(公告)日：2012-12-20
申请号：US13581281
申请日：2010-03-01
申请人： Jean-Paul Noel , Ming Li
发明人： Jean-Paul Noel , Ming Li
IPC分类号： H01L33/44
CPC分类号： H01L21/02164 , C23C16/0218 , C23C16/345 , C23C16/401 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02312 , H01L21/02337 , H05B33/10
摘要： A method is disclosed for deposition of thin film dielectrics, and in particular for chemical vapour deposition of nano-layer structures comprising multiple layers of dielectrics, such as, silicon dioxide, silicon nitride, silicon oxynitride and/or other silicon compatible dielectrics. The method comprises post-deposition surface treatment of deposited layers with a metal or semiconductor source gas, e.g. a silicon source gas. Deposition of silicon containing dielectrics preferably comprises silane-based chemistry for deposition of doped or undoped dielectric layers, and surface treatment of deposited dielectric layers with silane. Surface treatment provides dielectric layers with improved layer-to-layer uniformity and lateral continuity, and substantially atomically flat dielectric layers suitable for multilayer structures for electroluminescent light emitting structures, e.g. active layers containing rare earth containing luminescent centres. Doped or undoped dielectric thin films or nano-layer dielectric structures may also be provided for other semiconductor devices.
摘要翻译： 公开了一种用于沉积薄膜电介质的方法，特别是用于化学气相沉积包括多层电介质的纳米层结构，例如二氧化硅，氮化硅，氮氧化硅和/或其它与硅相容的电介质。 该方法包括用金属或半导体源气体沉积表面处理沉积层，例如， 硅源气体。 含硅电介质的沉积优选包括用于沉积掺杂或未掺杂的电介质层的硅烷基化学，以及用硅烷表面处理沉积的介电层。 表面处理提供具有改进的层间均匀性和横向连续性的电介质层，以及适用于电致发光发光结构的多层结构的基本上原子平坦的电介质层。 含有含稀土的发光中心的活性层。 也可以为其它半导体器件提供掺杂或未掺杂的电介质薄膜或纳米层介电结构。
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2.发明授权公开(公告)号：US09064693B2
公开(公告)日：2015-06-23
申请号：US13581281
申请日：2010-03-01
申请人： Jean-Paul Noel , Ming Li
发明人： Jean-Paul Noel , Ming Li
IPC分类号： H01L21/311 , H01L21/31 , H01L21/02 , C23C16/02 , C23C16/34 , C23C16/40 , C23C16/56 , H05B33/10
CPC分类号： H01L21/02164 , C23C16/0218 , C23C16/345 , C23C16/401 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02312 , H01L21/02337 , H05B33/10
摘要： Deposition of thin film dielectrics, and in particular for chemical vapor deposition of nano-layer structures comprising multiple layers of dielectrics, such as, silicon dioxide, silicon nitride, silicon oxynitride, and/or other silicon compatible dielectrics includes post-deposition surface treatment of deposited layers with a metal or semiconductor source gas, e.g., a silicon source gas. Deposition of silicon containing dielectrics comprises silane-based chemistry for deposition of doped or undoped dielectric layers, and surface treatment of deposited dielectric layers with silane. Surface treatment provides dielectric layers with improved layer-to-layer uniformity and lateral continuity, and substantially atomically flat dielectric layers suitable for multilayer structures for electroluminescent light emitting structures, e.g., active layers containing rare earth containing luminescent centers. Doped or undoped dielectric thin films or nano-layer dielectric structures may also be provided for other semiconductor devices.
摘要翻译： 薄膜电介质的沉积，特别是用于化学气相沉积的包括多层电介质的纳米层结构，例如二氧化硅，氮化硅，氮氧化硅和/或其它与硅相容的电介质包括后沉积表面处理 具有金属或半导体源气体的沉积层，例如硅源气体。 含硅电介质的沉积包括用于沉积掺杂或未掺杂电介质层的硅烷基化学，以及用硅烷表面处理沉积的介电层。 表面处理提供具有改进的层间均匀性和横向连续性的电介质层，以及适用于电致发光发光结构的多层结构的基本上原子平坦的介电层，例如含有含稀土含有发光中心的活性层。 也可以为其它半导体器件提供掺杂或未掺杂的电介质薄膜或纳米层介电结构。
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公开(公告)号：US4563567A
公开(公告)日：1986-01-07
申请号：US502214
申请日：1983-06-08
申请人： Jean Geffroy , Michel Hofman , Maurice Moulin , Jean-Paul Noel
发明人： Jean Geffroy , Michel Hofman , Maurice Moulin , Jean-Paul Noel
CPC分类号： B23K26/0884 , B25J19/0037 , G02B7/001
摘要： Apparatus for transmitting a beam of energy includes a first arm formed by a hollow tube, which is rotatable about its own axis, a second arm formed by two half-arms, arranged symmetrically with respect to the axis of the first tube and movable with respect thereto by means of an articulation, and a third arm formed by a hollow tube, articulated to the half-arms by two intermediate parts.
摘要翻译： 用于传输能量束的装置包括由可绕其自身轴线旋转的中空管形成的第一臂，由两个半臂形成的第二臂，所述第二臂相对于第一管的轴线对称设置，并且可相对于 以及由中空管形成的第三臂，通过两个中间部分铰接到半臂上。
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公开(公告)号：US07923288B2
公开(公告)日：2011-04-12
申请号：US12207734
申请日：2008-09-10
申请人： Jean-Paul Noel
发明人： Jean-Paul Noel
IPC分类号： H01L21/00
CPC分类号： C09K9/02
摘要： A thin film electro-luminescent device (TFEL) includes an active layer made of a direct bandgap semiconductor material, e.g. zinc oxide, doped with exciton binding centers, such as aluminum, in small amounts, e.g. 0.001 at % to 30.0 at %. The exciton binding centers prevent free excitons, created by impact ionization, from diffusing toward and recombining at native defect centers. To provide a columnar structure, a polycrystalline seed layer is deposited first to provide a template, followed by the deposition of an overlying layer forming columns in accordance with the template.
摘要翻译： 薄膜电致发光器件（TFEL）包括由直接带隙半导体材料制成的有源层，例如， 掺杂有激子结合中心的氧化锌，例如少量的铝，例如铝。 0.001at％至30.0at％。 激子结合中心阻止由冲击电离产生的游离激子在天然缺陷中心扩散和重组。 为了提供柱状结构，首先沉积多晶种子层以提供模板，随后沉积根据模板形成柱的上层。
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公开(公告)号：US20080164466A1
公开(公告)日：2008-07-10
申请号：US11971566
申请日：2008-01-09
申请人： Brian Rioux , Jean-Paul Noel
发明人： Brian Rioux , Jean-Paul Noel
IPC分类号： H01L33/00
CPC分类号： C09K9/02
摘要： The present invention relates to a sol-gel deposition/heat treatment process, which consistently produces polycrystalline direct bandgap semiconductor, e.g. ZnO, thin films exhibiting a photo luminescent (PL) spectrum at room temperature that is dominated by a single peak, e.g. in the ultraviolet part of the spectrum, in which the PL intensity of the bandgap emission is more than approximately 40 times greater than any deep-level defect emission peak or band. The present invention incorporates such direct bandgap semiconductor, e.g. ZnO, polycrystalline thin films produced by the method of the present invention into electro-luminescent devices that exhibit similarly high ratios of bandgap/deep-level defect emission intensity.
摘要翻译： 本发明涉及溶胶 - 凝胶沉积/热处理工艺，其一贯地生产多晶直接带隙半导体，例如， ZnO，在室温下表现出由单峰主导的光致发光（PL）光谱的薄膜，例如， 在光谱的紫外线部分，其中带隙发射的PL强度大于任何深层缺陷发射峰或带的大约40倍。 本发明包括这样的直接带隙半导体。 ZnO，通过本发明的方法制造的多晶薄膜变成具有相似高带隙/深层缺陷发射强度比的电致发光器件。
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公开(公告)号：US20090128029A1
公开(公告)日：2009-05-21
申请号：US12273972
申请日：2008-11-19
申请人： Thomas Macelwee , Jean-Paul Noel , Dean Ducharme , Yongbao Xin
发明人： Thomas Macelwee , Jean-Paul Noel , Dean Ducharme , Yongbao Xin
IPC分类号： H01L51/52
摘要： Electroluminescent (EL) devices structures are provided comprising a hot electron stopper layer structure to capture hot electrons and dissipate their energy, thereby reducing damage to the transparent conducting oxide (TCO) layer and reducing other hot electron effects, such as charging effects, which impact reliability of EL device structures. The stopper layer structure may comprise a single layer or multiple layers provided between the TCO electrode layer and the emitter structure, and may also function to reduce diffusion or chemical interactions between the TCO and the emitter layer structure. Optionally, stopper layers may also be provided within the emitter structure. Suitable stopper layer materials are wideband gap semiconductors or dielectrics, preferably transparent at wavelengths emitted by the EL device characterized by high impact ionization rates, and/or high relative permittivity relative to adjacent layers of the emitter structure.
摘要翻译： 提供电致发光（EL）器件结构，其包括热电子阻挡层结构以捕获热电子并耗散其能量，从而减少对透明导电氧化物（TCO）层的损伤并减少其他热电子效应，例如充电效应，其影响 EL器件结构的可靠性。 阻挡层结构可以包括设置在TCO电极层和发射极结构之间的单层或多层，并且还可以起到减少TCO和发射极层结构之间的扩散或化学相互作用的作用。 可选地，也可以在发射器结构内设置阻挡层。 合适的阻挡层材料是宽带隙半导体或电介质，优选在由EL器件发射的波长处是透明的，其特征在于高冲击电离速率和/或相对于发射极结构的相邻层的高相对介电常数。
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公开(公告)号：US5581639A
公开(公告)日：1996-12-03
申请号：US434841
申请日：1995-05-04
申请人： Michael Davies , Jean-Paul Noel , Derek Houghton
发明人： Michael Davies , Jean-Paul Noel , Derek Houghton
CPC分类号： G02B6/12007 , G02B6/124 , G02B2006/12107
摘要： An optical wavelength selective device is provided that is particularly useful as a demultiplexer. The device is made from a planar slab optical waveguide material transmissive to light. Perturbations in the form of holes are etched into the slab waveguide cladding or preferably into the core of the waveguide thereby changing the effective refractive index of regions within the core. The holes are very closely spaced and form a transmissive optical grating, having dimensions suitable for operating in the Raman-Nath regime. Mirrors or lenses are formed within the device for guiding an input beam into the waveguide as a parallel light source.
摘要翻译： 提供了一种特别适用于解复用器的光波长选择装置。 该装置由透光的平板光波导材料制成。 孔形式的扰动被蚀刻到平板波导包层中，或优选地蚀刻到波导的芯中，从而改变芯内的区域的有效折射率。 这些孔非常紧密地间隔开并形成透射光栅，其尺寸适于在拉曼 - 纳思（Raman-Nath）状态下操作。 反射镜或透镜形成在用于将输入光束引导到波导中作为平行光源的装置内。
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公开(公告)号：US4734557A
公开(公告)日：1988-03-29
申请号：US883591
申请日：1986-07-09
CPC分类号： G02B26/0825
摘要： A thin reflecting disk tightly bears on one edge of a case for defining a closed volume, means being provided in the latter for producing a negative pressure, and the bottom of the case is provided with supports arranged in parallel rows of three supoprts, a small beam being advantageously interposed between the disk and each row of supports when this mirror is used for focusing a laser beam, it is possible, by simply regulating the supports, to modify the shape of the disk so as to, e.g. obtain a rectilinear focal zone and a constant energy concentration of the beam along the zone.
摘要翻译： 薄的反射盘紧紧地保持在壳体的一个边缘上，用于限定闭合的体积，在后者中设置用于产生负压的装置，并且壳体的底部设置有平行排列的三个支架，小的 当该反射镜用于聚焦激光束时，光束被有利地插入在光盘和每一列支撑之间，可以通过简单地调节支撑来修改光盘的形状，以便例如 获得沿着该区域的直线焦点区域和该束的恒定能量集中。
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公开(公告)号：US07923925B2
公开(公告)日：2011-04-12
申请号：US12273972
申请日：2008-11-19
申请人： Thomas MacElwee , Jean-Paul Noel , Dean Ducharme , Yongbao Xin
发明人： Thomas MacElwee , Jean-Paul Noel , Dean Ducharme , Yongbao Xin
摘要： Electroluminescent (EL) devices structures are provided comprising a hot electron stopper layer structure to capture hot electrons and dissipate their energy, thereby reducing damage to the transparent conducting oxide (TCO) layer and reducing other hot electron effects, such as charging effects, which impact reliability of EL device structures. The stopper layer structure may comprise a single layer or multiple layers provided between the TCO electrode layer and the emitter structure, and may also function to reduce diffusion or chemical interactions between the TCO and the emitter layer structure. Optionally, stopper layers may also be provided within the emitter structure. Suitable stopper layer materials are wideband gap semiconductors or dielectrics, preferably transparent at wavelengths emitted by the EL device characterized by high impact ionization rates, and/or high relative permittivity relative to adjacent layers of the emitter structure.
摘要翻译： 提供电致发光（EL）器件结构，其包括热电子阻挡层结构以捕获热电子并耗散其能量，从而减少对透明导电氧化物（TCO）层的损伤并减少其他热电子效应，例如充电效应，其影响 EL器件结构的可靠性。 阻挡层结构可以包括设置在TCO电极层和发射极结构之间的单层或多层，并且还可以起到减少TCO和发射极层结构之间的扩散或化学相互作用的作用。 可选地，也可以在发射器结构内设置阻挡层。 合适的阻挡层材料是宽带隙半导体或电介质，优选在由EL器件发射的波长处是透明的，其特征在于高冲击电离速率和/或相对于发射极结构的相邻层的高相对介电常数。
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公开(公告)号：US20090001872A1
公开(公告)日：2009-01-01
申请号：US12207734
申请日：2008-09-10
申请人： Jean-Paul Noel
发明人： Jean-Paul Noel
CPC分类号： C09K9/02
摘要： A thin film electro-luminescent device (TFEL) includes an active layer made of a direct bandgap semiconductor material, e.g. zinc oxide, doped with exciton binding centers, such as aluminum, in small amounts, e.g. 0.001 at % to 30.0 at %. The exciton binding centers prevent free excitons, created by impact ionization, from diffusing toward and recombining at native defect centers. To provide a columnar structure, a polycrystalline seed layer is deposited first to provide a template, followed by the deposition of an overlying layer forming columns in accordance with the template.
摘要翻译： 薄膜电致发光器件（TFEL）包括由直接带隙半导体材料制成的有源层，例如， 掺杂有激子结合中心的氧化锌，例如少量的铝，例如铝。 0.001at％至30.0at％。 激子结合中心阻止由冲击电离产生的游离激子在天然缺陷中心扩散和重组。 为了提供柱状结构，首先沉积多晶种子层以提供模板，随后沉积根据模板形成柱的上层。
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