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公开(公告)号:US20140246782A1
公开(公告)日:2014-09-04
申请号:US14141947
申请日:2013-12-27
申请人: Jiyoung KIM , Daeik KIM , Kang-Uk KIM , Nara KIM , Jemin PARK , Kyuhyun LEE , Hyun-Woo CHUNG , Gyoyoung JIN , HyeongSun HONG , Yoosang HWANG
发明人: Jiyoung KIM , Daeik KIM , Kang-Uk KIM , Nara KIM , Jemin PARK , Kyuhyun LEE , Hyun-Woo CHUNG , Gyoyoung JIN , HyeongSun HONG , Yoosang HWANG
IPC分类号: H01L23/544
CPC分类号: H01L23/544 , H01L21/6835 , H01L21/76898 , H01L23/481 , H01L27/0688 , H01L27/10897 , H01L27/14632 , H01L27/14634 , H01L27/1464 , H01L2221/68327 , H01L2221/6835 , H01L2221/68363 , H01L2223/54426 , H01L2924/0002 , H01L2924/00
摘要: A method of fabricating a semiconductor device includes providing a semiconductor substrate having a first surface and a second surface opposite the first surface, forming an alignment key and a connection contact that penetrate a portion of the semiconductor substrate and extend from the first surface toward the second surface, forming a first circuit on the first surface of the semiconductor substrate such that the first circuit is electrically connected to the connection contact, recessing the second surface of the semiconductor substrate to form a third surface exposing the alignment key and the connection contact, and forming a second circuit on the third surface of the semiconductor substrate such that the second circuit is electrically connected to the connection contact.
摘要翻译: 一种制造半导体器件的方法包括提供具有第一表面和与第一表面相对的第二表面的半导体衬底,形成对准键和穿过半导体衬底的一部分并从第一表面延伸到第二表面的连接触点 在所述半导体衬底的所述第一表面上形成第一电路,使得所述第一电路电连接到所述连接触点,使所述半导体衬底的所述第二表面凹陷以形成暴露所述对准键和所述连接触点的第三表面,以及 在半导体衬底的第三表面上形成第二电路,使得第二电路电连接到连接触点。