公开(公告)号：US20130334622A1

公开(公告)日：2013-12-19

申请号：US13917044

申请日：2013-06-13

申请人： Julian GONSKA ,  Jochen REINMUTH ,  Kathrin GUTSCHE

发明人： Julian GONSKA ,  Jochen REINMUTH ,  Kathrin GUTSCHE

IPC分类号： B81B3/00 ,  B81C1/00

CPC分类号： B81B3/0018 ,  B81B7/0038 ,  B81B7/02 ,  B81B2201/025 ,  B81C1/00134

摘要： A micromechanical device, in particular a sensor device, and a method for manufacturing a micromechanical device are provided. The micromechanical device has a housing, the housing including a first cavity, and the housing including a second cavity that is separate from the first cavity. The micromechanical device is configured in such a way that a predetermined first gas pressure prevails in the first cavity, and a predetermined second gas pressure which is reduced compared to the first gas pressure prevails in the second cavity. A heating element is situated in the area of the second cavity. The micromechanical device has a printed conductor, the heating element being heatable with the aid of the printed conductor.

摘要翻译： 提供微机械装置，特别是传感器装置，以及微机械装置的制造方法。 微机械装置具有壳体，壳体包括第一空腔，并且壳体包括与第一空腔分离的第二空腔。 微机械装置被配置成使得在第一空腔中存在预定的第一气体压力，并且与第一气体压力相比降低的预定的第二气体压力在第二空腔中占优势。 加热元件位于第二腔的区域中。 微机械装置具有印刷导体，加热元件借助印刷导体可加热。

公开(公告)号：US20130161820A1

公开(公告)日：2013-06-27

申请号：US13719799

申请日：2012-12-19

申请人： Julian GONSKA ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

发明人： Julian GONSKA ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

IPC分类号： H01L21/50 ,  H01L23/488

CPC分类号： H01L21/50 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/185 ,  H01L21/187 ,  H01L23/488 ,  H01L24/94 ,  H01L2224/83805 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/16251 ,  H01L2924/01013 ,  H01L2924/01032 ,  H01L2924/00

摘要： A method for bonding two silicon substrates and a corresponding system of two silicon substrates. The method includes: providing first and second silicon substrates; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1 and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate; subsequently joining the first and second silicon substrates, so that the first and the second bonding surfaces lie opposite each other; and implementing a thermal treatment step to form an eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as the main component, between the first silicon substrate and the second silicon substrate, spikes which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.

摘要翻译： 一种用于接合两个硅衬底和两个硅衬底的对应系统的方法。 该方法包括：提供第一和第二硅衬底; 在第一硅衬底的第一接合表面上沉积具有0.1至5％铜含量的纯铝或铝 - 铜的第一接合层; 在所述第一接合表面上方或第二硅衬底的第二接合表面上方沉积锗的第二接合层; 随后接合第一和第二硅衬底，使得第一和第二接合表面彼此相对; 并且在第一硅衬底和第二硅衬底之间实现热处理步骤以形成铝锗或含有铝 - 锗的共晶结合层作为主要组分，最小含有铝并延伸到第一硅中的尖峰 衬底，至少形成在第一结合表面上。