公开(公告)号：US09153523B2

公开(公告)日：2015-10-06

申请号：US14307108

申请日：2014-06-17

申请人： Heribert Weber ,  Hartmut Kueppers ,  Jochen Reinmuth ,  Neil Davies ,  Jens Frey

发明人： Heribert Weber ,  Hartmut Kueppers ,  Jochen Reinmuth ,  Neil Davies ,  Jens Frey

IPC分类号： H01L23/52 ,  H01L23/48 ,  B81C3/00

CPC分类号： H01L23/481 ,  B81C1/00238 ,  B81C3/001 ,  B81C2203/0109 ,  B81C2203/0792 ,  G01C19/5783 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an ASIC element, vias are integrated into the CMOS processing of an ASIC substrate. The ASIC element includes an active front side in which the circuit functions are implemented. The at least one via is intended to establish an electrical connection between the active front side and the rear side of the element. The front side of the via is defined by at least one front-side trench which is completely filled, and the rear side is defined by at least one rear-side trench which is not completely filled. The rear-side trench opens into the filled front-side trench.

摘要翻译： 在ASIC元件中，通孔被集成到ASIC基板的CMOS处理中。 ASIC元件包括其中实现电路功能的主动正面。 该至少一个通孔旨在在元件的主动前侧和后侧之间建立电连接。 通孔的前侧由完全填充的至少一个前侧沟槽限定，并且后侧由未完全填充的至少一个后侧沟槽限定。 后侧沟槽穿过填充的前侧沟槽。

公开(公告)号：US08975118B2

公开(公告)日：2015-03-10

申请号：US13701277

申请日：2011-04-13

申请人： Julian Gonska ,  Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

发明人： Julian Gonska ,  Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

IPC分类号： H01L27/088 ,  H01L23/48 ,  B81C1/00 ,  H01L21/768

CPC分类号： H01L23/481 ,  B81B2203/033 ,  B81B2207/095 ,  B81C1/00095 ,  H01L21/76837 ,  H01L23/04 ,  H01L2224/48463 ,  H01L2924/1461 ,  H01L2924/00

摘要： An advantageous method and system for realizing electrically very reliable and mechanically extremely stable vias for components whose functionality is realized in a layer construction on a conductive substrate. The via (Vertical Interconnect Access), which is led to the back side of the component and which is used for the electrical contacting of functional elements realized in the layer construction, includes a connection area in the substrate that extends over the entire thickness of the substrate and is electrically insulated from the adjoining substrate by a trench-like insulating frame likewise extending over the entire substrate thickness. According to the present system, the trench-like insulating frame is filled up with an electrically insulating polymer.

摘要翻译： 一种有利的方法和系统，用于实现电气非常可靠和机械上非常稳定的通孔，用于在导电基底上的层结构中实现其功能的部件。 被引导到部件的背面并用于在层结构中实现的功能元件的电接触的通孔（垂直互连访问）包括在基板中的连接区域，该连接区域在整个厚度 并且通过类似于整个基板厚度延伸的沟槽状绝缘框架与邻接的基板电绝缘。 根据本系统，沟槽状绝缘框架填充有电绝缘聚合物。

公开(公告)号：US08941193B2

公开(公告)日：2015-01-27

申请号：US13869428

申请日：2013-04-24

申请人： Jens Frey ,  Frank Fischer

发明人： Jens Frey ,  Frank Fischer

IPC分类号： B81C3/00 ,  B81B1/00 ,  H01L29/84 ,  B81C1/00 ,  B81B7/00

CPC分类号： B81C1/00269 ,  B81B7/007 ,  B81C1/00238 ,  B81C2203/0785

摘要： A simple and cost-effective manufacturing method for hybrid integrated components including at least one MEMS element, a cap for the micromechanical structure of the MEMS element, and at least one ASIC substrate, using which a high degree of miniaturization may be achieved. The micromechanical structure of the MEMS element and the cap are manufactured in a layered structure, proceeding from a shared semiconductor substrate, by applying at least one cap layer to a first surface of the semiconductor substrate, and by processing and structuring the semiconductor substrate proceeding from its other second surface, to produce and expose the micromechanical MEMS structure. The semiconductor substrate is then mounted with the MEMS-structured second surface on the ASIC substrate.

摘要翻译： 一种用于混合集成部件的简单和成本有效的制造方法，包括至少一个MEMS元件，用于MEMS元件的微机械结构的盖，以及至少一个ASIC基板，其可以实现高度的小型化。 MEMS元件和盖的微机械结构通过将至少一个盖层施加到半导体衬底的第一表面，并且通过加工和构造半导体衬底从共享半导体衬底开始，以分层结构制造，并且从 其另一个第二表面，以产生和暴露微机械MEMS结构。 然后将半导体衬底与MEMS结构的第二表面安装在ASIC衬底上。

公开(公告)号：US08759927B2

公开(公告)日：2014-06-24

申请号：US13891796

申请日：2013-05-10

申请人： Johannes Classen ,  Jens Frey

发明人： Johannes Classen ,  Jens Frey

IPC分类号： H04R23/00

CPC分类号： B81B7/008 ,  B81C1/0023 ,  B81C1/00238 ,  B81C2203/0792

摘要： A hybrid integrated component including an MEMS element and an ASIC element is refined to improve the capacitive signal detection or activation. The MEMS element is implemented in a layered structure on a semiconductor substrate. The layered structure of the MEMS element includes at least one printed conductor level and at least one functional layer, in which the micromechanical structure of the MEMS element having at least one deflectable structural element is implemented. The ASIC element is mounted face down on the layered structure and functions as a cap for the micromechanical structure. The deflectable structural element of the MEMS element is equipped with at least one electrode of a capacitor system. At least one stationary counter electrode of the capacitor system is implemented in the printed conductor level of the MEMS element, and the ASIC element includes at least one further counter electrode of the capacitor system.

摘要翻译： 改进了包括MEMS元件和ASIC元件的混合集成元件以改善电容信号检测或激活。 MEMS元件以半导体衬底上的分层结构实现。 MEMS元件的分层结构包括至少一个印刷导体水平和至少一个功能层，其中具有至少一个可偏转结构元件的MEMS元件的微机械结构被实现。 ASIC元件面朝下地安装在分层结构上，并且用作微机械结构的盖。 MEMS元件的可偏转结构元件配备有电容器系统的至少一个电极。 电容器系统的至少一个固定对电极在MEMS元件的印刷导体电平中实现，并且ASIC元件包括电容器系统的至少一个另外的对置电极。

公开(公告)号：US20140110800A1

公开(公告)日：2014-04-24

申请号：US14058806

申请日：2013-10-21

申请人： Johannes CLASSEN ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner

发明人： Johannes CLASSEN ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner

IPC分类号： B81C1/00 ,  B81B3/00

CPC分类号： B81C1/00015 ,  B81B3/0018 ,  B81B7/0058

摘要： A manufacturing method for a cap, for a hybrid vertically integrated component having a MEMS component a relatively large cavern volume having a low cavern internal pressure, and a reliable overload protection for the micromechanical structure of the MEMS component. A cap structure is produced in a flat cap substrate in a multistep anisotropic etching, and includes at least one mounting frame having at least one mounting surface and a stop structure, on the cap inner side, having at least one stop surface, the surface of the cap substrate being masked for the multistep anisotropic etching with at least two masking layers made of different materials, and the layouts of the masking layers and the number and duration of the etching steps being selected so that the mounting surface, the stop surface, and the cap inner side are situated at different surface levels of the cap structure.

摘要翻译： 一种用于具有MEMS部件的混合垂直集成部件的盖的制造方法，具有较低的洞穴内部压力的相对较大的洞穴体积以及用于MEMS部件的微机械结构的可靠的过载保护。 在多步骤各向异性蚀刻中，在平盖基板中制造盖结构，并且包括至少一个安装框架，该安装框架具有至少一个安装表面和止动结构，在盖内侧具有至少一个止动表面， 掩模基板被掩模用于具有由不同材料制成的至少两个掩模层的多步各向异性蚀刻，并且选择掩模层的布局以及蚀刻步骤的数量和持续时间，使得安装表面，止动表面和 帽内侧位于帽结构的不同表面水平处。

公开(公告)号：US20140027927A1

公开(公告)日：2014-01-30

申请号：US13923035

申请日：2013-06-20

申请人： Jochen REINMUTH ,  Jens FREY ,  Yvonne BERGMANN

发明人： Jochen REINMUTH ,  Jens FREY ,  Yvonne BERGMANN

IPC分类号： H01L23/48 ,  H01L21/762

CPC分类号： H01L21/76224 ,  B81B7/007 ,  B81B2207/096 ,  B81C1/00095 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/02 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/05009 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29147 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/83193 ,  H01L2224/83805 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/351 ,  H01L2224/0231 ,  H01L2224/83 ,  H01L21/78 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/00

摘要： A method for manufacturing a component having an electrical through-connection is described. The method includes the following steps: providing a semiconductor substrate having a front side and a back side opposite from the front side, producing an insulating trench, which annularly surrounds a contact area, on the front side of the semiconductor substrate, filling the insulating trench with an insulating material, producing an electrical contact structure on the front side of the semiconductor substrate by depositing an electrically conductive material in the contact area, removing the semiconductor material remaining in the contact area on the back side of the semiconductor substrate in order to produce a contact hole which opens up the bottom side of the contact structure, and depositing a metallic material in the contact hole in order to electrically connect the electrical contact structure to the back side of the semiconductor substrate.

摘要翻译： 描述了一种用于制造具有电穿通连接的部件的方法。 该方法包括以下步骤：提供具有与前侧相反的前侧和后侧的半导体衬底，在半导体衬底的正面上产生环形地包围接触区域的绝缘沟槽，填充绝缘沟槽 具有绝缘材料，通过在接触区域中沉积导电材料，在半导体衬底的正面上产生电接触结构，去除残留在半导体衬底背面接触区域中的半导体材料，以便产生 接触孔，其向开放接触结构的底侧开口，并且在接触孔中沉积金属材料，以将电接触结构电连接到半导体衬底的背面。

公开(公告)号：US08490483B2

公开(公告)日：2013-07-23

申请号：US12834953

申请日：2010-07-13

申请人： Martin Wrede ,  Johannes Classen ,  Torsten Ohms ,  Carsten Geckeler ,  Burkhard Kuhlmann ,  Jens Frey ,  Daniel Christoph Meisel ,  Joerg Hauer ,  Thorsten Balslink

发明人： Martin Wrede ,  Johannes Classen ,  Torsten Ohms ,  Carsten Geckeler ,  Burkhard Kuhlmann ,  Jens Frey ,  Daniel Christoph Meisel ,  Joerg Hauer ,  Thorsten Balslink

IPC分类号： G01C19/56

CPC分类号： G01C19/5712 ,  G01C19/5747

摘要： A micromechanical yaw-rate sensor comprising a first yaw-rate sensor element, which outputs a first sensor signal, which contains information about a rotation around a first rotational axis, a second yaw-rate sensor element, which outputs a second sensor signal, which contains information about a rotation around a second rotational axis, which is perpendicular to the first rotational axis, a drive, which drives the first yaw-rate sensor element, and a coupling link, which mechanically couples the first yaw-rate sensor element and the second yaw-rate sensor element to one another, so that driving of the first yaw-rate sensor element also causes driving of the second yaw-rate sensor element.

摘要翻译： 一种微机械摆动速率传感器，包括第一偏转速率传感器元件，该第一偏转速率传感器元件输出包含关于围绕第一旋转轴线的旋转的信息的第一传感器信号，输出第二传感器信号的第二偏转速度传感器元件， 包含关于围绕垂直于第一旋转轴线的第二旋转轴线的旋转的信息，驱动第一偏转速率传感器元件的驱动器和耦合连杆，其将第一横摆速率传感器元件和 第二偏转速率传感器元件彼此之间，使得第一偏转速率传感器元件的驱动也引起第二偏转速率传感器元件的驱动。

公开(公告)号：US07313958B2

公开(公告)日：2008-01-01

申请号：US10471635

申请日：2002-09-25

申请人： Rainer Willig ,  Jochen Franz ,  Burkhard Kuhlmann ,  Joerg Hauer ,  Udo-Martin Gomez ,  Dieter Maurer ,  Christian Doering ,  Wolfram Bauer ,  Udo Bischof ,  Reinhard Neul ,  Johannes Classen ,  Christoph Lang ,  Jens Frey

发明人： Rainer Willig ,  Jochen Franz ,  Burkhard Kuhlmann ,  Joerg Hauer ,  Udo-Martin Gomez ,  Dieter Maurer ,  Christian Doering ,  Wolfram Bauer ,  Udo Bischof ,  Reinhard Neul ,  Johannes Classen ,  Christoph Lang ,  Jens Frey

IPC分类号： G01C19/00

CPC分类号： G01C19/5747

摘要： A rotational rate sensor having a substrate and a Coriolis element is proposed, the Coriolis element being situated over a surface of a substrate; a driving arrangement being provided, by which the Coriolis element is induced to vibrations parallel to a first axis; a detection arrangement being provided, by which an excursion of the Coriolis elements is detectable on the basis of a Coriolis force in a second axis that is provided to be essentially perpendicular to the first axis; the first and second axis being parallel to the surface of the substrate; sensor elements that are designated to be at least partially movable with respect to the substrate being provided; a force-conveying arrangement being provided; the force-conveying arrangement being provided to convey a static force effect between the substrate and at least one of the sensor elements.

摘要翻译： 提出了具有基板和科里奥利元件的旋转速率传感器，科里奥利元件位于基板的表面上方; 提供了一种驱动装置，通过该驱动装置将科里奥利元件引入平行于第一轴线的振动; 提供了一种检测装置，通过该检测装置可以基于设置成基本上垂直于第一轴线的第二轴线中的科里奥利力检测科里奥利元件的偏移; 所述第一和第二轴平行于所述基板的表面; 指定为相对于所述基板至少部分移动的传感器元件; 提供力传递装置; 所述力输送装置被提供以在所述基底和所述传感器元件中的至少一个之间传递静态力效应。

公开(公告)号：US09123716B2

公开(公告)日：2015-09-01

申请号：US13719799

申请日：2012-12-19

申请人： Julian Gonska ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

发明人： Julian Gonska ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

IPC分类号： H01L21/00 ,  H01L23/48 ,  H01L21/50 ,  H01L23/488 ,  H01L21/18 ,  B81C1/00 ,  H01L23/00

CPC分类号： H01L21/50 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/185 ,  H01L21/187 ,  H01L23/488 ,  H01L24/94 ,  H01L2224/83805 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/16251 ,  H01L2924/01013 ,  H01L2924/01032 ,  H01L2924/00

摘要： A method for bonding two silicon substrates and a corresponding system of two silicon substrates. The method includes: providing first and second silicon substrates; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1 and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate; subsequently joining the first and second silicon substrates, so that the first and the second bonding surfaces lie opposite each other; and implementing a thermal treatment step to form an eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as the main component, between the first silicon substrate and the second silicon substrate, spikes which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.

摘要翻译： 一种用于接合两个硅衬底和两个硅衬底的对应系统的方法。 该方法包括：提供第一和第二硅衬底; 在第一硅衬底的第一接合表面上沉积具有0.1至5％铜含量的纯铝或铝 - 铜的第一接合层; 在所述第一接合表面上方或第二硅衬底的第二接合表面上方沉积锗的第二接合层; 随后接合第一和第二硅衬底，使得第一和第二接合表面彼此相对; 并且在第一硅衬底和第二硅衬底之间实现热处理步骤以形成铝锗或含有铝 - 锗的共晶结合层作为主要组分，最小含有铝并延伸到第一硅中的尖峰 衬底，至少形成在第一结合表面上。

公开(公告)号：US20140117475A1

公开(公告)日：2014-05-01

申请号：US14059202

申请日：2013-10-21

申请人： Johannes CLASSEN ,  Axel FRANKE ,  Jens FREY ,  Heribert WEBER ,  Frank FISCHER ,  Patrick WELLNER ,  Mirko HATTASS ,  Daniel Christoph MEISEL

发明人： Johannes CLASSEN ,  Axel FRANKE ,  Jens FREY ,  Heribert WEBER ,  Frank FISCHER ,  Patrick WELLNER ,  Mirko HATTASS ,  Daniel Christoph MEISEL

IPC分类号： B81B7/00

CPC分类号： B81C1/00246 ,  B81C1/0023 ,  B81C2203/075 ,  B81C2203/0771 ,  H01L2224/48463

摘要： A component has at least one MEMS element and at least one cap made of a semiconductor material. The cap, in addition to its mechanical function as a terminus of a cavity and protection of the micromechanical structure, is provided with an electrical functionality. The micromechanical structure of the MEMS element of the component is situated in a cavity between a carrier and the cap, and includes at least one structural element which is deflectable out of the component plane within the cavity. The cap includes at least one section extending over the entire thickness of the cap, which is electrically insulated from the adjoining semiconductor material in such a way that it may be electrically contacted independently from the remaining sections of the cap.

摘要翻译： 元件具有至少一个MEMS元件和至少一个由半导体材料制成的盖。 盖子除了作为空腔的终端的机械功能以及微机械结构的保护之外，还具有电功能。 元件的MEMS元件的微机械结构位于载体和盖之间的空腔中，并且包括至少一个结构元件，其可在空腔内偏离组件平面。 该帽包括至少一个在盖的整个厚度上延伸的部分，其与相邻的半导体材料电绝缘，使得其可以独立于帽的其余部分电接触。