Abstract:
A ceramic printed circuit board (PCB) and an inkjet printhead assembly using the ceramic PCB. A ceramic PCB in which a plurality of layers are stacked includes a plurality of terminals to receive an electric signal from an external source, a plurality of circuit patterns connected to the plurality of terminals to transmit the electric signal, and a termination resistor having a predetermined thickness disposed between the plurality of circuit patterns, wherein the termination resistor is mounted between the plurality of stacked layers.
Abstract:
Provided is a method of canceling a vocal signal, wherein the method includes obtaining a difference signal between two audio signals; and smoothing the frequency of the difference signal. Also provided is a device for canceling a vocal signal, the device including a subtracter which obtains a difference signal between two audio signals; and a frequency smoothing unit which smoothes a frequency of the difference signal.
Abstract:
A method and apparatus to detect the temperature of an inkjet head are provided. A method of detecting the temperature of an inkjet head, comprising detecting an amount of printing data allocated to each of a plurality of unit head chips of the inkjet head, determining a detection frequency of temperature information on each of the plurality of unit head chips according to the detected amount of printing data, and detecting the temperature information on each of the plurality of unit head chips according to the determined detection frequency.
Abstract:
A fabrication method and a related semiconductor device are disclosed. The method includes; forming a gate structure on a semiconductor substrate, the gate structure comprising a stacked combination a gate dielectric pattern, a gate, a capping layer pattern and an epitaxial blocking layer pattern, forming sidewall spacers on the gate structure covering at least sidewall portions of the gate dielectric pattern, the gate, and the capping layer pattern, wherein the epitaxial blocking layer pattern is exposed on a top surface of the gate structure, forming an elevated epitaxial layer on the semiconductor substrate outside the gate structure using a selective epitaxial growth process, and forming elevated source/drain regions by applying an ion implantation process to the semiconductor substrate following formation of the elevated epitaxial layer, wherein the epitaxial blocking layer is a nitrogen enhanced layer relative to the capping layer pattern.
Abstract:
A thermoelectric material including: a nanostructure; a discontinuous area disposed in the nanostructure, and an uneven portion disposed on the nano structure.
Abstract:
A developing unit includes a developer feeding unit which feeds developer to an image receptor, a casing which supports the developer feeding unit and includes a developer storing part provided in an area to face the developer feeding unit and to store the developer, and a developer feeding plate which is formed with a developer flowing hole through which the developer flows, and is provided to move between the developer storing part and the developer feeding unit.