公开(公告)号：US20230307520A1

公开(公告)日：2023-09-28

申请号：US17898224

申请日：2022-08-29

Applicant: KIOXIA CORPORATION

Inventor： Takuya KIKUCHI ,  Yuya NAGATA ,  Masaya TODA ,  Kappei IMAMURA ,  Tsubasa IMAMURA

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/42384 ,  H01L29/66969 ,  H01L29/7869 ,  H01L27/1225

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes forming an electrode layer on a film containing indium and etching portions of the electrode layer left exposed by a mask layer until at least a portion of the film is exposed. A spacer film is formed to cover an upper surface of the electrode layer, side surfaces of the electrode layer, and an exposed upper surface of the film. The spacer film on the upper surface of the electrode layer and the exposed upper surface of the film is removed while leaving the spacer film on the side surfaces of the electrode layer. The exposed upper surface of the film is exposed to a reductive gas plasma to reduce portions of the film. These reduced portions of the film are then etched with a chemical solution.

公开(公告)号：US20240097044A1

公开(公告)日：2024-03-21

申请号：US18456419

申请日：2023-08-25

Applicant: Kioxia Corporation

Inventor： Yusuke KASAHARA ,  Kappei IMAMURA ,  Akifumi GAWASE ,  Shinji MORI ,  Akihiro KAJITA

IPC: H01L29/786 ,  H01L29/417 ,  H10B12/00

CPC classification number: H01L29/78696 ,  H01L29/41733 ,  H01L29/78642 ,  H01L29/7869 ,  H10B12/05 ,  H10B12/33

Abstract: According to one embodiment, a semiconductor device includes a first conductive layer between first and second insulating layers with an oxide semiconductor column extending in the first direction through these layers. A third insulating layer covers the column. The column has a first semiconductor portion at a first position matching the first insulating layer, a second semiconductor portion at a second position matching second insulating layer, and a third semiconductor portion at a third position matching the first conductive layer. The first semiconductor portion is continuous along a second direction between the third insulating layer, the second semiconductor portion is continuous along the second direction between the third insulating layer, but the third semiconductor portion is not continuous between the third insulating layer.

公开(公告)号：US20210288065A1

公开(公告)日：2021-09-16

申请号：US17010165

申请日：2020-09-02

Applicant: Kioxia Corporation

Inventor： Kappei IMAMURA

IPC: H01L27/11582 ,  H01L21/768

Abstract: A semiconductor storage device of an embodiment includes: a stacked body in which each of a plurality of first conductive layers and each of a plurality of first insulating layers are alternately stacked; a pillar extending in the stacked body in a stacking direction of the stacked body; a plurality of memory cells individually formed at intersections of the plurality of first conductive layers and the pillar; a lower layer structure arranged below the stacked body; a lower receiver that opens on an upper surface of the lower layer structure, the lower receiver having a metal layer filled in a groove extending in a first direction along a surface direction of the upper surface of the lower layer structure; and a strip extending in the first direction and extending in the stacking direction in the stacked body, having a lower end of the strip being arranged in the lower receiver.