公开(公告)号：US10082470B2

公开(公告)日：2018-09-25

申请号：US15430817

申请日：2017-02-13

Applicant: KLA-Tencor Corporation

Inventor： David Shortt ,  Steven Lange ,  Junwei Wei ,  Daniel Kapp ,  Charles Amsden

IPC: G01N1/44 ,  G01N21/95 ,  G01N21/88 ,  G01N1/28

CPC classification number: G01N21/8851 ,  G01N1/286 ,  G01N1/44 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/9506 ,  G01N21/956 ,  G01N2021/888

Abstract: Methods and systems for accurately locating buried defects previously detected by an inspection system are described herein. A physical mark is made on the surface of a wafer near a buried defect detected by an inspection system. In addition, the inspection system accurately measures the distance between the detected defect and the physical mark in at least two dimensions. The wafer, an indication of the nominal location of the mark, and an indication of the distance between the detected defect and the mark are transferred to a material removal tool. The material removal tool (e.g., a focused ion beam (FIB) machining tool) removes material from the surface of the wafer above the buried defect until the buried defect is made visible to an electron-beam based measurement system. The electron-beam based measurement system is subsequently employed to further analyze the defect.

公开(公告)号：US20180088056A1

公开(公告)日：2018-03-29

申请号：US15430817

申请日：2017-02-13

Applicant: KLA-Tencor Corporation

Inventor： David Shortt ,  Steven Lange ,  Junwei Wei ,  Daniel Kapp ,  Charles Amsden

IPC: G01N21/88 ,  G01N1/28 ,  G01N1/44 ,  G01N21/95

CPC classification number: G01N21/8851 ,  G01N1/286 ,  G01N1/44 ,  G01N21/8806 ,  G01N21/9501

Abstract: Methods and systems for accurately locating buried defects previously detected by an inspection system are described herein. A physical mark is made on the surface of a wafer near a buried defect detected by an inspection system. In addition, the inspection system accurately measures the distance between the detected defect and the physical mark in at least two dimensions. The wafer, an indication of the nominal location of the mark, and an indication of the distance between the detected defect and the mark are transferred to a material removal tool. The material removal tool (e.g., a focused ion beam (FIB) machining tool) removes material from the surface of the wafer above the buried defect until the buried defect is made visible to an electron-beam based measurement system. The electron-beam based measurement system is subsequently employed to further analyze the defect.