公开(公告)号：US20200027602A1

公开(公告)日：2020-01-23

申请号：US16246749

申请日：2019-01-14

Applicant: KOREA ATOMIC ENERGY RESEARCH INSTITUTE

Inventor： Dong Seok KIM ,  Dong-Joo KIM ,  JangSoo OH ,  Keon-Sik KIM ,  Jong-Hun KIM ,  Jae-Ho YANG

IPC: G21C21/02 ,  G21C3/62 ,  G21C3/04

Abstract: Disclosed are a nuclear fuel pellet having enhanced thermal conductivity and a method of manufacturing the same, the method including (a) a step of manufacturing a mixture including a nuclear fuel oxide powder and a thermally conductive plate-shaped metal powder; and (b) a step of molding and then heat-treating the thermally conductive plate-shaped metal powder to have an orientation in a horizontal direction in the mixture, thereby forming a pellet.

公开(公告)号：US20230282384A1

公开(公告)日：2023-09-07

申请号：US18011487

申请日：2021-06-22

Applicant: KOREA ATOMIC ENERGY RESEARCH INSTITUTE

Inventor： Dong Seok KIM ,  Young Jun YOON ,  Jae Sang LEE

IPC: G21H1/06 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/118 ,  H01L31/18 ,  G21H1/02

CPC classification number: G21H1/06 ,  H01L31/03529 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/1185 ,  H01L31/1856 ,  H01L31/1848 ,  G21H1/02

Abstract: The present invention relates to a betavoltaic battery comprising: a substrate; an intrinsic semiconductor unit disposed on the substrate; an N-type semiconductor unit and a P-type semiconductor unit that are disposed on at least a portion of a surface of the intrinsic semiconductor unit and arranged alternately; and beta ray sources that are disposed on the N-type semiconductor unit and the P-type semiconductor unit. The present invention also relates to a method for manufacturing a betavoltaic battery, comprising the steps of: (A) forming an intrinsic semiconductor unit on a substrate; (B) forming an N-type semiconductor unit and a P-type semiconductor unit alternately by irradiating at least a portion of the surface of the intrinsic semiconductor unit with an ion beam; and (C) disposing a beta ray source on the N-type semiconductor unit and the P-type semiconductor unit.

公开(公告)号：US20230282481A1

公开(公告)日：2023-09-07

申请号：US18198024

申请日：2023-05-16

Applicant: KOREA ATOMIC ENERGY RESEARCH INSTITUTE

Inventor： Dong Seok KIM ,  Young Jun YOON ,  Jae Sang LEE

IPC: H01L21/265 ,  H01L29/778

CPC classification number: H01L21/26553 ,  H01L29/7786

Abstract: The present invention relates to: a method for manufacturing a GaN-based power device, the method comprising a step of irradiating particle beams onto a silicon substrate of a GaN-based power device, in which the silicon substrate is included; and a GaN-based power device manufactured by the method for manufacturing a GaN-based power device.

公开(公告)号：US20230282480A1

公开(公告)日：2023-09-07

申请号：US18196216

申请日：2023-05-11

Applicant: KOREA ATOMIC ENERGY RESEARCH INSTITUTE

Inventor： Dong Seok KIM ,  Young Jun YOON ,  Jae Sang LEE

IPC: H01L21/265 ,  H01J37/317 ,  H01L29/20 ,  H01L29/08 ,  H01L29/45

CPC classification number: H01L21/26546 ,  H01J37/3171 ,  H01L29/2003 ,  H01L29/0847 ,  H01L29/452 ,  H01L29/7786

Abstract: The present invention relates to: a method for forming an ohmic contact of a GaN-based electronic device, comprising the steps of (A) irradiating an ion beam at a GaN-based electronic device to form an ion region in one part of the inside of the GaN-based electronic device, (B) forming an electrode layer on a part, corresponding to the ion region, of the surface of the GaN-based electronic, device, and (C) thermally treating the GaN-based electronic device on which the electrode layer is formed; and an ohmic contact of a GaN-based electronic device manufactured by the method for forming an ohmic contact of a GaN-based electronic device.

公开(公告)号：US20220208401A1

公开(公告)日：2022-06-30

申请号：US17606001

申请日：2020-04-02

Applicant: KOREA ATOMIC ENERGY RESEARCH INSTITUTE

Inventor： Sang Chae JEON ,  Keon Sik KIM ,  Jong Hun KIM ,  Dong Joo KIM ,  Dong Seok KIM ,  Ji Hae YOON ,  Jae Ho YANG

IPC: G21C3/62 ,  C04B35/195 ,  C04B35/64

Abstract: The present invention relates to nuclear fuel pellets and a manufacturing method thereof, and more particularly, to nuclear fuel pellets comprising a trapping material of fission gas and a manufacturing method thereof. A nuclear fuel pellet of the present invention comprises a nuclear fuel; and a trapping material of fission gas, wherein the trapping material of the fission gas includes an oxide containing at least one element selected from the group consisting of silicon (Si), aluminum (Al) and barium (Ba) to exhibit an excellent trapping ability selective and independent for fission gas.