公开(公告)号：US20240309734A1

公开(公告)日：2024-09-19

申请号：US18183497

申请日：2023-03-14

申请人： Halliburton Energy Services, Inc.

发明人： Stephen Michael Greci ,  Gordon McLeary ,  Ryan W. McChesney

IPC分类号： E21B41/00 ,  E21B49/00 ,  G21H1/06

CPC分类号： E21B41/0085 ,  E21B49/00 ,  G21H1/06

摘要： Some implementations include a downhole power source to be positioned in a wellbore to supply electrical power to an electrical device in the wellbore, the downhole power source comprising a radioisotope source to be positioned downhole in the wellbore to emit radiation. One or more semiconductor layers to be positioned downhole in the wellbore may be configured to capture the emitted radiation from the radioisotope source and to may be configured to generate the electrical power based on the captured radiation.

公开(公告)号：US20240201402A1

公开(公告)日：2024-06-20

申请号：US18530720

申请日：2023-12-06

申请人： CANON KABUSHIKI KAISHA

发明人： TATSUHITO GODEN ,  TAKANORI WATANABE

IPC分类号： G01T1/17 ,  G01T1/20 ,  G21H1/06

CPC分类号： G01T1/17 ,  G01T1/20185 ,  G21H1/06

摘要： A radiation detector includes a first pixel and a second pixel disposed in a same column, a first comparator connected with the first pixel via a first vertical signal line, and a second comparator connected with the second pixel via a second vertical signal line. A first distance from a conversion portion of the first pixel to the first vertical signal line is different from a second distance from a conversion portion of the second pixel to the second vertical signal line. The first comparator is configured to receive a first reference signal and compare the first reference signal with an output signal sent from the first pixel. The second comparator is configured to receive a second reference signal and compare the second reference signal with an output signal sent from the second pixel. The second reference signal is different from the first reference signal.

公开(公告)号：US11881325B2

公开(公告)日：2024-01-23

申请号：US17073712

申请日：2020-10-19

申请人： Medtronic, Inc.

发明人： Andreas Fenner ,  David A. Ruben ,  Anna J. Malin ,  Paul F. Gerrish ,  Bruce C. Fleischhauer ,  Larry E. Tyler

IPC分类号： G21H1/02 ,  G21C19/07 ,  G21H1/04 ,  G21H1/06

CPC分类号： G21H1/02 ,  G21C19/07 ,  G21H1/04 ,  G21H1/06 ,  Y10T29/49117

摘要： Various embodiments of a nuclear radiation particle power converter and method of forming such power converter are disclosed. In one or more embodiments, the power converter can include first and second electrodes, a three-dimensional current collector disposed between the first and second electrodes and electrically coupled to the first electrode, and a charge carrier separator disposed on at least a portion of a surface of the three-dimensional current collector. The power converter can also include a hole conductor layer disposed on at least a portion of the charge carrier separator and electrically coupled to the second electrode, and nuclear radiation-emitting material disposed such that at least one nuclear radiation particle emitted by the nuclear radiation-emitting material is incident upon the charge carrier separator.

公开(公告)号：US20230402201A1

公开(公告)日：2023-12-14

申请号：US18447310

申请日：2023-08-10

申请人： CONTEMPORARY AMPEREX TECHNOLOGY CO., LIMITED

发明人： Changsong Chen ,  Weifeng Liang ,  Ling Xiang ,  Bao Tu ,  Yongsheng Guo ,  Guodong Chen ,  Chuying Ouyang

IPC分类号： G21H1/06

CPC分类号： G21H1/06

摘要： Provided are a perovskite betavoltaic-photovoltaic battery. The battery includes a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode in sequence. The first electrode is a transparent electrode. The first charge transport layer is an electron transport layer and the second charge transport layer is a hole transport layer, or, the first charge transport layer is a hole transport layer and the second charge transport layer is an electron transport layer. The perovskite layer is doped with a fluorescent substance. At least one of the first electrode, the first charge transport layer, the second charge transport layer, or the second electrode is radioactive. When the first electrode and/or the second electrode is radioactive, the first electrode and/or the second electrode is an irradiated electrode formed by compounding a radioactive source and a conductor material.

公开(公告)号：US11783956B2

公开(公告)日：2023-10-10

申请号：US17549724

申请日：2021-12-13

申请人： City Labs, Inc.

发明人： Peter Cabauy

IPC分类号： G21H1/00 ,  G21H1/06 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0216 ,  H01L31/115 ,  H01L31/18

CPC分类号： G21H1/06 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/115 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1892

摘要： A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A radioisotope source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material. The devices can be connected in series or parallel.

公开(公告)号：US10083770B2

公开(公告)日：2018-09-25

申请号：US14182908

申请日：2014-02-18

申请人： Jae Wan Kwon ,  Tongtawee Wacharasindhu ,  John David Robertson

发明人： Jae Wan Kwon ,  Tongtawee Wacharasindhu ,  John David Robertson

IPC分类号： G21H1/00 ,  G21H1/06

CPC分类号： G21H1/00 ,  G21H1/06

摘要： A solid-state high energy-density micro radioisotope power source device including a dielectric and radiation shielding body having an internal cavity, a first electrode disposed a first end of the cavity, and a second electrode disposed at an opposing second end of the cavity and spaced apart from the first electrode such that a micro chamber is provided therebetween. The device further includes a solid-state composite voltaic semiconductor disposed within the micro chamber fabricated by combining at least one semiconductor material with at least one radioisotope material to provide a pre-voltaic semiconductor composition; depositing the pre-voltaic semiconductor composition into the micro chamber; heating the body to liquefy the pre-voltaic semiconductor composition within the micro chamber such that the semiconductor and radioisotope materials are uniformly mixed; and cooling the body and liquid state composite mixture such that liquid state composite mixture solidifies to provide the solid-state composite voltaic semiconductor.

公开(公告)号：US20180211738A1

公开(公告)日：2018-07-26

申请号：US15414698

申请日：2017-01-25

申请人： Bor-Ruey CHEN

发明人： Bor-Ruey CHEN

IPC分类号： G21H1/06 ,  H01L51/44 ,  H01L51/42

CPC分类号： G21H1/06 ,  H01L51/4213 ,  H01L51/441 ,  H01L51/448

摘要： Herein is disclosed a quantum cell from top to down including: an N-type ohmic contact electrode, an N-type π-orbital semiconductor substrate, an N-type π-orbital semiconductor epitaxy layer, a SiO2 passivation layer, a graphite contact layer, a Schottky contact electrode, a binding layer, and a radioisotope layer. The N-type π-orbital semiconductor substrate includes an organic semiconductor material with an aromatic group or a semiconductor material with a carbon-carbon bond. The N-type π-orbital semiconductor epitaxy layer has a doping concentration of 1×1013-5×1014 cm−3 and is formed by injection of a cationic complex in a dose of 6×1013-1×1015 cm−3.

公开(公告)号：US09893226B2

公开(公告)日：2018-02-13

申请号：US15392769

申请日：2016-12-28

申请人： TRI ALPHA ENERGY, INC.

发明人： Michl W. Binderbauer ,  Toshiki Tajima

IPC分类号： G01J1/00 ,  H01L31/0725 ,  H01L31/115 ,  G01T1/28 ,  G21H1/04 ,  G21H1/06

CPC分类号： H01L31/0725 ,  G01T1/28 ,  G21H1/04 ,  G21H1/06 ,  H01L31/0352 ,  H01L31/115 ,  Y02E10/542

摘要： Systems and methods for the conversion of energy of high-energy photons into electricity which utilize a series of materials with differing atomic charges to take advantage of the emission of a large multiplicity of electrons by a single high-energy photon via a cascade of Auger electron emissions. In one embodiment, a high-energy photon converter preferably includes a linearly layered nanometric-scaled wafer made up of layers of a first material sandwiched between layers of a second material having an atomic charge number differing from the atomic charge number of the first material. In other embodiments, the nanometric-scaled layers are configured in a tubular or shell-like configuration and/or include layers of a third insulator material.

公开(公告)号：US09728292B2

公开(公告)日：2017-08-08

申请号：US14349933

申请日：2012-05-31

申请人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Yujuan Zhang ,  Chao Han ,  Yanqiang Shi

发明人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Yujuan Zhang ,  Chao Han ,  Yanqiang Shi

IPC分类号： G21H1/06 ,  H01L29/868 ,  H01L21/04 ,  H01L29/66 ,  H01L29/36 ,  H01L29/861 ,  H01L29/16 ,  H01L29/167 ,  H01L21/02

CPC分类号： G21H1/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/861 ,  H01L29/868

摘要： A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm−3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm−3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm−3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

公开(公告)号：US09570644B2

公开(公告)日：2017-02-14

申请号：US15087283

申请日：2016-03-31

申请人： TRI ALPHA ENERGY, INC.

发明人： Michl W. Binderbauer ,  Toshiki Tajima

IPC分类号： G01J1/00 ,  H01L31/0725 ,  G01T1/28 ,  G21H1/06 ,  H01L31/0352 ,  H01L31/115 ,  G21H1/04

CPC分类号： H01L31/0725 ,  G01T1/28 ,  G21H1/04 ,  G21H1/06 ,  H01L31/0352 ,  H01L31/115 ,  Y02E10/542

摘要： Systems and methods for the conversion of energy of high-energy photons into electricity which utilize a series of materials with differing atomic charges to take advantage of the emission of a large multiplicity of electrons by a single high-energy photon via a cascade of Auger electron emissions. In one embodiment, a high-energy photon converter preferably includes a linearly layered nanometric-scaled wafer made up of layers of a first material sandwiched between layers of a second material having an atomic charge number differing from the atomic charge number of the first material. In other embodiments, the nanometric-scaled layers are configured in a tubular or shell-like configuration and/or include layers of a third insulator material.

摘要翻译： 用于将高能光子能量转换成电的系统和方法，其利用具有不同原子电荷的一系列材料，以利用单个高能光子通过俄歇电子级联发射大量多个电子 排放。 在一个实施例中，高能量光子转换器优选地包括由夹在第二材料的层之间的第一材料的层构成的线性层状纳米尺度晶片，其具有与第一材料的原子电荷数不同的原子电荷数。 在其他实施例中，纳米尺度的层被构造成管状或壳状构造和/或包括第三绝缘体材料的层。