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公开(公告)号:US20230282384A1
公开(公告)日:2023-09-07
申请号:US18011487
申请日:2021-06-22
Applicant: KOREA ATOMIC ENERGY RESEARCH INSTITUTE
Inventor: Dong Seok KIM , Young Jun YOON , Jae Sang LEE
IPC: G21H1/06 , H01L31/0352 , H01L31/0304 , H01L31/118 , H01L31/18 , G21H1/02
CPC classification number: G21H1/06 , H01L31/03529 , H01L31/03044 , H01L31/03048 , H01L31/1185 , H01L31/1856 , H01L31/1848 , G21H1/02
Abstract: The present invention relates to a betavoltaic battery comprising: a substrate; an intrinsic semiconductor unit disposed on the substrate; an N-type semiconductor unit and a P-type semiconductor unit that are disposed on at least a portion of a surface of the intrinsic semiconductor unit and arranged alternately; and beta ray sources that are disposed on the N-type semiconductor unit and the P-type semiconductor unit. The present invention also relates to a method for manufacturing a betavoltaic battery, comprising the steps of: (A) forming an intrinsic semiconductor unit on a substrate; (B) forming an N-type semiconductor unit and a P-type semiconductor unit alternately by irradiating at least a portion of the surface of the intrinsic semiconductor unit with an ion beam; and (C) disposing a beta ray source on the N-type semiconductor unit and the P-type semiconductor unit.
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公开(公告)号:US20230282481A1
公开(公告)日:2023-09-07
申请号:US18198024
申请日:2023-05-16
Applicant: KOREA ATOMIC ENERGY RESEARCH INSTITUTE
Inventor: Dong Seok KIM , Young Jun YOON , Jae Sang LEE
IPC: H01L21/265 , H01L29/778
CPC classification number: H01L21/26553 , H01L29/7786
Abstract: The present invention relates to: a method for manufacturing a GaN-based power device, the method comprising a step of irradiating particle beams onto a silicon substrate of a GaN-based power device, in which the silicon substrate is included; and a GaN-based power device manufactured by the method for manufacturing a GaN-based power device.
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公开(公告)号:US20230282480A1
公开(公告)日:2023-09-07
申请号:US18196216
申请日:2023-05-11
Applicant: KOREA ATOMIC ENERGY RESEARCH INSTITUTE
Inventor: Dong Seok KIM , Young Jun YOON , Jae Sang LEE
IPC: H01L21/265 , H01J37/317 , H01L29/20 , H01L29/08 , H01L29/45
CPC classification number: H01L21/26546 , H01J37/3171 , H01L29/2003 , H01L29/0847 , H01L29/452 , H01L29/7786
Abstract: The present invention relates to: a method for forming an ohmic contact of a GaN-based electronic device, comprising the steps of (A) irradiating an ion beam at a GaN-based electronic device to form an ion region in one part of the inside of the GaN-based electronic device, (B) forming an electrode layer on a part, corresponding to the ion region, of the surface of the GaN-based electronic, device, and (C) thermally treating the GaN-based electronic device on which the electrode layer is formed; and an ohmic contact of a GaN-based electronic device manufactured by the method for forming an ohmic contact of a GaN-based electronic device.
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