公开(公告)号：US20230282384A1

公开(公告)日：2023-09-07

申请号：US18011487

申请日：2021-06-22

Applicant: KOREA ATOMIC ENERGY RESEARCH INSTITUTE

Inventor： Dong Seok KIM ,  Young Jun YOON ,  Jae Sang LEE

IPC: G21H1/06 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/118 ,  H01L31/18 ,  G21H1/02

CPC classification number: G21H1/06 ,  H01L31/03529 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/1185 ,  H01L31/1856 ,  H01L31/1848 ,  G21H1/02

Abstract: The present invention relates to a betavoltaic battery comprising: a substrate; an intrinsic semiconductor unit disposed on the substrate; an N-type semiconductor unit and a P-type semiconductor unit that are disposed on at least a portion of a surface of the intrinsic semiconductor unit and arranged alternately; and beta ray sources that are disposed on the N-type semiconductor unit and the P-type semiconductor unit. The present invention also relates to a method for manufacturing a betavoltaic battery, comprising the steps of: (A) forming an intrinsic semiconductor unit on a substrate; (B) forming an N-type semiconductor unit and a P-type semiconductor unit alternately by irradiating at least a portion of the surface of the intrinsic semiconductor unit with an ion beam; and (C) disposing a beta ray source on the N-type semiconductor unit and the P-type semiconductor unit.

公开(公告)号：US20230282481A1

公开(公告)日：2023-09-07

申请号：US18198024

申请日：2023-05-16

Applicant: KOREA ATOMIC ENERGY RESEARCH INSTITUTE

Inventor： Dong Seok KIM ,  Young Jun YOON ,  Jae Sang LEE

IPC: H01L21/265 ,  H01L29/778

CPC classification number: H01L21/26553 ,  H01L29/7786

Abstract: The present invention relates to: a method for manufacturing a GaN-based power device, the method comprising a step of irradiating particle beams onto a silicon substrate of a GaN-based power device, in which the silicon substrate is included; and a GaN-based power device manufactured by the method for manufacturing a GaN-based power device.

公开(公告)号：US20230282480A1

公开(公告)日：2023-09-07

申请号：US18196216

申请日：2023-05-11

Applicant: KOREA ATOMIC ENERGY RESEARCH INSTITUTE

Inventor： Dong Seok KIM ,  Young Jun YOON ,  Jae Sang LEE

IPC: H01L21/265 ,  H01J37/317 ,  H01L29/20 ,  H01L29/08 ,  H01L29/45

CPC classification number: H01L21/26546 ,  H01J37/3171 ,  H01L29/2003 ,  H01L29/0847 ,  H01L29/452 ,  H01L29/7786

Abstract: The present invention relates to: a method for forming an ohmic contact of a GaN-based electronic device, comprising the steps of (A) irradiating an ion beam at a GaN-based electronic device to form an ion region in one part of the inside of the GaN-based electronic device, (B) forming an electrode layer on a part, corresponding to the ion region, of the surface of the GaN-based electronic, device, and (C) thermally treating the GaN-based electronic device on which the electrode layer is formed; and an ohmic contact of a GaN-based electronic device manufactured by the method for forming an ohmic contact of a GaN-based electronic device.