公开(公告)号：US09831245B1

公开(公告)日：2017-11-28

申请号：US15416859

申请日：2017-01-26

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyung-Jun Kim ,  Hyun Cheol Koo ,  Chaun Jang ,  Hansung Kim

IPC: H01L21/28 ,  H01L29/66 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/778 ,  H01L29/36

CPC classification number: H01L27/092 ,  H01L21/28291 ,  H01L21/823807 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/085 ,  H01L29/0895 ,  H01L29/36 ,  H01L29/66462 ,  H01L29/66984 ,  H01L29/7785 ,  H01L29/7786

Abstract: A complementary logic device includes i) a substrate, ii) a first semiconductor device located on the substrate and including a first channel layer, a carrier supply layer for supplying a carrier to the channel layer, and an upper cladding layer and a lower cladding layer respectively located at upper and lower portions of the channel layer, iii) a second semiconductor device located on the substrate and including a structure the same or similar to that of the first semiconductor device, iv) a source electrode located on the two semiconductors and made of a ferromagnetic body, v) a drain electrode located on the two semiconductors and made of a ferromagnetic body, and vi) a gate electrode located on the two semiconductors and located between the two electrodes so that a gate voltage is applied thereto to control a spin of electrons passing through the two channel layers.

公开(公告)号：US09099328B2

公开(公告)日：2015-08-04

申请号：US14052129

申请日：2013-10-11

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun Cheol Koo ,  Hyung-Jun Kim ,  Joon Yeon Chang ,  Jun Woo Choi ,  Suk Hee Han

IPC: H01L21/02 ,  H01L29/08 ,  H01L29/66 ,  H01L29/82 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/0673 ,  H01L29/41725 ,  H01L29/4238 ,  H01L29/66984

Abstract: A complementary device including a gate electrode, a channel, a source electrode connected to the gate electrode and the channel, and a first drain electrode and a second drain electrode connected to the gate electrode and the channel is provided. The first/second drain electrode is formed so that, in accordance with a voltage applied to the gate electrode, electron spins injected into the source electrode are moved from the source electrode to the first/second drain electrode through the channel while rotating in a first/second direction. Directions of the electron spins that reach the first drain electrode and the second drain electrode are opposite to each other.

Abstract translation: 提供了包括栅电极，沟道，连接到栅电极和沟道的源电极以及连接到栅电极和沟道的第一漏电极和第二漏电极的互补器件。 第一/第二漏极形成为使得根据施加到栅电极的电压，注入到源电极的电子自旋通过沟道从源电极移动到第一/第二漏电极，同时在第一 /第二个方向。 到达第一漏电极和第二漏电极的电子自旋的方向彼此相反。