公开(公告)号：US10815565B2

公开(公告)日：2020-10-27

申请号：US16198663

申请日：2018-11-21

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jaehyun Park ,  Yumin Sim ,  Jaikyeong Kim

IPC: C23C16/26 ,  C23C16/02 ,  G02F1/01 ,  G02F1/00

Abstract: A method for synthesizing a graphene pattern includes physically adhering a catalyst block including a catalyst material, which is a gamma-alumina thin film, to a portion of a growth substrate to form a flat interface between the catalyst block and the growth substrate; forming a graphene thin film selectively at the flat interface between the catalyst block and the growth substrate in an atmosphere including a carbon source and a growth inhibitor containing oxygen, and applying a force to physically separate the catalyst block from the graphene thin film and the growth substrate, wherein carbon atoms from the carbon source are diffused along the flat interface and the growth inhibitor is substantially blocked by a diffusion barrier formed by the flat interface so that the graphene thin film is selectively formed at the flat interface.

公开(公告)号：US11359277B2

公开(公告)日：2022-06-14

申请号：US16880432

申请日：2020-05-21

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jaehyun Park ,  Dongjun Lee

IPC: C23C16/34 ,  C23C16/04 ,  C23C16/02 ,  C23C16/455

Abstract: A masking block configured to contact a growth substrate to define a pattern of a two-dimensional material directly synthesized on the growth substrate, includes a base substrate; a gamma-alumina film that is disposed on the base substrate and that has an upper surface in which a (110) plane is dominant as being more than 50%; and a hexagonal boron nitride film that is doped with carbon and oxygen that is disposed on the gamma-alumina film, and that has reduced defects due to properties of the gamma-alumina film, wherein the hexagonal boron nitride film contains an amount of carbon ranging from 1 at % to 15 at % based on total atoms of carbon, oxygen, nitrogen and boron in the hexagonal boron nitride film and includes voids such that a coverage ratio of the hexagonal boron nitride film on the gamma-alumina film is less than 1 and equal to or more than 0.9.

公开(公告)号：US10883176B2

公开(公告)日：2021-01-05

申请号：US16198877

申请日：2018-11-23

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Yong-Won Song ,  Md. Siam Uddin ,  Jaehyun Park

IPC: C23C16/26 ,  C23C18/12 ,  H01L21/02 ,  H01S3/067 ,  H01S3/113 ,  H01S3/10 ,  H01S3/23 ,  C23C16/455 ,  C23C16/40 ,  H01S3/0941 ,  H01L29/16 ,  H01L29/786 ,  H01S3/094

Abstract: A method for directly synthesizing graphene on a surface of a target object includes: forming a non-metal layer on a support substrate; disposing the target object in a space above the support substrate, which is opposite to the non-metal layer; and injecting a carbon precursor to form graphene on the surface of the target object to synthesize a graphene film, wherein the graphene is nucleated and grown by a decomposition of the carbon precursor, the carbon precursor is decomposed by heat with catalytic assistance from the non-metal layer, and a carbon atom from the decomposition of the precursor is anchored on the surface to form the graphene film.