公开(公告)号：US11785859B2

公开(公告)日：2023-10-10

申请号：US17163829

申请日：2021-02-01

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jun Woo Choi ,  Sang Yeop Lee ,  Hyejin Ryu ,  Chaun Jang

IPC: H10N50/10 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/10 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

Abstract: Proposed is a magnetoresistance device, including a first layered magnetic material layer in which a magnetization direction is controlled depending on the voltage, a second layered magnetic material layer in which a magnetization direction is fixed in a predetermined direction, and a layered insulator layer interposed between the first and second layered magnetic material layers.

公开(公告)号：US20220123204A1

公开(公告)日：2022-04-21

申请号：US17163829

申请日：2021-02-01

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jun Woo Choi ,  Sang Yeop Lee ,  Hyejin Ryu ,  Chaun Jang

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: Proposed is a magnetoresistance device, including a first layered magnetic material layer in which a magnetization direction is controlled depending on the voltage, a second layered magnetic material layer in which a magnetization direction is fixed in a predetermined direction, and a layered insulator layer interposed between the first and second layered magnetic material layers.