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公开(公告)号：US20230076503A1
公开(公告)日：2023-03-09
申请号：US17891193
申请日：2022-08-19
Applicant: KYOCERA AVX Components Corporation
Inventor： Marianne Berolini , Cory Nelson , Ronald S. Demcko
Abstract: A heat sink component can include a body including a thermally conductive material that is electrically non-conductive. At least one first terminal can be formed over a first end of the body. At least one second terminal formed over a second end of the body. The second end of the body can be opposite the first end of the body in an X-direction. The heat sink component can have a length in the X-direction and a width in a Y-direction that is parallel with the top surface and perpendicular to the X-direction. A ratio of the width to the length can be greater than about 1.
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公开(公告)号：US20230298815A1
公开(公告)日：2023-09-21
申请号：US18323442
申请日：2023-05-25
Applicant: KYOCERA AVX Components Corporation
Inventor： Ronald S. Demcko
Abstract: A component array can include a first multilayer ceramic component having a first terminal at a first end and a second terminal at a second end opposite the first end in a first direction. A second component can have a first terminal at a first end and a second terminal at a second end opposite the first end in the first direction. A heat sink layer can be arranged between the first component and the second component in a second direction that is perpendicular to the first direction. The heat sink layer can include a first metallization layer electrically connecting the first terminal of the first multilayer ceramic component with the first terminal of the second multilayer ceramic component and a second metallization layer electrically connecting the second terminal of the first multilayer ceramic component with the second terminal of the second multilayer ceramic component.
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Patent Agency Ranking
公开(公告)号：US12243687B2
公开(公告)日：2025-03-04
申请号：US18323442
申请日：2023-05-25
Applicant: KYOCERA AVX Components Corporation
Inventor： Ronald S. Demcko
Abstract: A component array can include a first multilayer ceramic component having a first terminal at a first end and a second terminal at a second end opposite the first end in a first direction. A second component can have a first terminal at a first end and a second terminal at a second end opposite the first end in the first direction. A heat sink layer can be arranged between the first component and the second component in a second direction that is perpendicular to the first direction. The heat sink layer can include a first metallization layer electrically connecting the first terminal of the first multilayer ceramic component with the first terminal of the second multilayer ceramic component and a second metallization layer electrically connecting the second terminal of the first multilayer ceramic component with the second terminal of the second multilayer ceramic component.
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公开(公告)号：US20240234591A9
公开(公告)日：2024-07-11
申请号：US18489042
申请日：2023-10-18
Applicant: KYOCERA AVX Components Corporation
Inventor： Ronald S. Demcko , Cory Nelson , Marianne Berolini , Jeff Borgman
IPC: H01L29/94
CPC classification number: H01L29/94
Abstract: A metal-oxide-semiconductor (MOS) capacitor can include a substrate comprising a semiconductor material, an oxide layer formed over a first surface of the substrate, a resistive layer formed over at least a portion of the oxide layer, and a conductive layer formed over at least a portion of the resistive layer. As such, the MOS capacitor can include a resistor and a capacitor formed in series with one another.
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公开(公告)号：US20240234038A9
公开(公告)日：2024-07-11
申请号：US18489039
申请日：2023-10-18
Applicant: KYOCERA AVX Components Corporation
Inventor： Ronald S. Demcko , Cory Nelson , Marianne Berolini , Jeff Borgman
CPC classification number: H01G4/33 , H01G4/1254 , H01G4/252 , H05K1/162 , H05K2201/09554
Abstract: A single layer capacitor can include a substrate having a first surface and a second surface opposite the first surface. A resistive layer can be formed over at least a portion of the first surface of the substrate. A first conductive layer can be formed over at least a portion of the resistive layer. A second conductive layer can be formed over at least a portion of the second surface of the substrate. As such, the single layer capacitor can include a resistor and a capacitor formed in series with one another.
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公开(公告)号：US20240136448A1
公开(公告)日：2024-04-25
申请号：US18489042
申请日：2023-10-17
Applicant: KYOCERA AVX Components Corporation
Inventor： Ronald S. Demcko , Cory Nelson , Marianne Berolini , Jeff Borgman
IPC: H01L29/94
CPC classification number: H01L29/94
Abstract: A metal-oxide-semiconductor (MOS) capacitor can include a substrate comprising a semiconductor material, an oxide layer formed over a first surface of the substrate, a resistive layer formed over at least a portion of the oxide layer, and a conductive layer formed over at least a portion of the resistive layer. As such, the MOS capacitor can include a resistor and a capacitor formed in series with one another.
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公开(公告)号：US20240136123A1
公开(公告)日：2024-04-25
申请号：US18489039
申请日：2023-10-17
Applicant: KYOCERA AVX Components Corporation
Inventor： Ronald S. Demcko , Cory Nelson , Marianne Berolini , Jeff Borgman
CPC classification number: H01G4/33 , H01G4/1254 , H01G4/252 , H05K1/162 , H05K2201/09554
Abstract: A single layer capacitor can include a substrate having a first surface and a second surface opposite the first surface. A resistive layer can be formed over at least a portion of the first surface of the substrate. A first conductive layer can be formed over at least a portion of the resistive layer. A second conductive layer can be formed over at least a portion of the second surface of the substrate. As such, the single layer capacitor can include a resistor and a capacitor formed in series with one another.
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