Multilayer Filter, Multilayer Filter Assembly, and Methods for Forming a Multilayer Filter

    公开(公告)号:US20250167414A1

    公开(公告)日:2025-05-22

    申请号:US18944054

    申请日:2024-11-12

    Abstract: Filters, filter assemblies, and methods of forming filters are provided. For example, a filter includes a plurality of dielectric layers that are stacked in a Z-direction to form a substrate having a top, a bottom, and a perimeter, with an outer dielectric layer disposed at the top. The filter also includes a plurality of conductive layers, with an outer conductive layer formed over the outer dielectric layer, and a plurality of vias that are defined along the perimeter of the substrate and extend from the outer conductive layer to the bottom of the substrate. An assembly includes the filter attached to a device substrate. A method of forming the filter includes forming the dielectric and conductive layers, such as by forming an outer conductive layer over an outer dielectric layer; stacking the plurality of layers to form a substrate; and defining a plurality of vias along the substrate's perimeter.

    High Frequency And High Power Thin-Film Component

    公开(公告)号:US20240250113A1

    公开(公告)日:2024-07-25

    申请号:US18609003

    申请日:2024-03-19

    CPC classification number: H01L28/20 H01L23/367 H01L23/647 H01L23/66

    Abstract: A surface mount component is disclosed including an electrically insulating beam that is thermally conductive. The electrically insulating beam has a first end and a second end that is opposite the first end. The surface mount component includes a thin-film component formed on the electrically insulating beam adjacent the first end of the electrically insulating beam. A heat sink terminal is formed on the electrically insulating beam adjacent a second end of the electrically insulating beam. In some embodiments, the thin-film component has an area power capacity of greater than about 0.17 W/mm2 at about 28 GHz.

    High frequency and high power thin-film component

    公开(公告)号:US11949169B2

    公开(公告)日:2024-04-02

    申请号:US17676889

    申请日:2022-02-22

    CPC classification number: H01Q5/314 H01L27/08 H01L28/20 H01Q1/2283

    Abstract: A resistive splitter can include a monolithic substrate and a patterned resistive layer formed over the monolithic substrate. The resistive splitter can include a first terminal, a second terminal, and a third terminal each connected with the patterned resistive layer. The resistive splitter can include at least one frequency compensating conductive layer formed over a portion of the patterned resistive layer. In some embodiments, the resistive splitter can exhibit a first insertion loss response between the first terminal and the second terminal that is greater than about −10 dB for frequencies ranging from about 0 GHz up to about 30 GHz.

    Electronically Insulating Thermal Connector having a Low Thermal Resistivity

    公开(公告)号:US20230076503A1

    公开(公告)日:2023-03-09

    申请号:US17891193

    申请日:2022-08-19

    Abstract: A heat sink component can include a body including a thermally conductive material that is electrically non-conductive. At least one first terminal can be formed over a first end of the body. At least one second terminal formed over a second end of the body. The second end of the body can be opposite the first end of the body in an X-direction. The heat sink component can have a length in the X-direction and a width in a Y-direction that is parallel with the top surface and perpendicular to the X-direction. A ratio of the width to the length can be greater than about 1.

    Metal-Oxide-Semiconductor Capacitor and Circuit Board Including the Same Embedded Therein

    公开(公告)号:US20220352391A1

    公开(公告)日:2022-11-03

    申请号:US17722465

    申请日:2022-04-18

    Inventor: Cory Nelson

    Abstract: A metal-oxide-semiconductor (MOS) capacitor can include a substrate including a semiconductor material, an oxide layer formed on a surface of the substrate, a conductive layer formed over at least a portion of the oxide layer, a first terminal connected with the surface of the substrate, and a second terminal connected with the conductive layer. The oxide layer can be connected in series between the substrate and the conductive layer to form a capacitor between the first terminal and the second terminal. Each of the first terminal and the second terminal can be exposed along the surface of the substrate for surface mounting the capacitor. The MOS capacitor can exhibit excellent high frequency performance. For example, an insertion loss of the MOS capacitor can be greater than about −0.75 dB for frequencies ranging from about 5 GHz to about 40 GHz.

    Vertically Oriented Interposer Stack And Assembly

    公开(公告)号:US20250079321A1

    公开(公告)日:2025-03-06

    申请号:US18805598

    申请日:2024-08-15

    Abstract: Vertically oriented interposer stacks, assemblies, and methods are provided. For example, a vertically oriented interposer stack includes a plurality of interposers and a plurality of components. Each component is disposed between adjacent interposers. Each interposer includes a first side surface opposite a second side surface along the vertical direction. The first side surface and the second side surface each extend along the longitudinal direction from a first end surface to a second end surface. Each interposer has a first external termination formed on the first side surface and a second external termination formed on the first side surface. The first and second external terminations are spaced apart along the longitudinal direction. The interposers are stacked along the lateral direction such that the first external terminations are generally aligned with one another along the lateral direction and the second external terminations are generally aligned with one another along the lateral direction.

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