公开(公告)号：US20240380187A1

公开(公告)日：2024-11-14

申请号：US18228633

申请日：2023-07-31

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Thiago P. Melo ,  Ryan C. White ,  Philip Chan ,  Phillip Skahan

IPC: H01S5/50 ,  H01S5/026 ,  H01S5/042 ,  H01S5/10 ,  H01S5/125 ,  H01S5/40

Abstract: According to the present invention, techniques for high power gallium and nitrogen containing laser diode devices are provided. Such high power devices include straight lasers, tapered lasers, distributed feedback lasers, distributed Bragg reflector laser devices, and master oscillator power amplifier devices, among others configured with improved mode quality.

公开(公告)号：US11177634B1

公开(公告)日：2021-11-16

申请号：US16871730

申请日：2020-05-11

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass ,  Thiago P. Melo ,  Mathew C. Schmidt

IPC: H01S5/343 ,  H01S5/227 ,  H01L21/02 ,  H01S5/042 ,  H01S5/32 ,  H01S5/10 ,  H01S5/30 ,  H01S5/22

Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.