公开(公告)号：US11791606B1

公开(公告)日：2023-10-17

申请号：US17141788

申请日：2021-01-05

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Mathew C. Schmidt ,  Yu-Chia Chang

IPC: H01S5/042 ,  B82Y20/00 ,  H01L33/00 ,  H01S5/343 ,  H01S5/34 ,  H01S5/065 ,  H01S5/20 ,  H01S5/22 ,  H01S5/40 ,  H01L33/06 ,  H01S5/32

CPC classification number: H01S5/0427 ,  B82Y20/00 ,  H01L33/0045 ,  H01S5/0651 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/34 ,  H01S5/3407 ,  H01S5/34333 ,  H01L33/06 ,  H01S5/0652 ,  H01S5/32025 ,  H01S5/320275 ,  H01S5/3414 ,  H01S5/405 ,  H01S5/4087 ,  H01S2301/02

Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

公开(公告)号：US11177634B1

公开(公告)日：2021-11-16

申请号：US16871730

申请日：2020-05-11

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass ,  Thiago P. Melo ,  Mathew C. Schmidt

IPC: H01S5/343 ,  H01S5/227 ,  H01L21/02 ,  H01S5/042 ,  H01S5/32 ,  H01S5/10 ,  H01S5/30 ,  H01S5/22

Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

公开(公告)号：US11626708B1

公开(公告)日：2023-04-11

申请号：US17108699

申请日：2020-12-01

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Mathew C. Schmidt ,  Bryan Ellis

IPC: H01S5/00 ,  H01S5/22 ,  H01S5/10 ,  H01S5/02 ,  H01S5/343 ,  H01S5/32 ,  H01S5/323

Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.