摘要:
According to one embodiment, a solid-state image pickup device includes a pixel array that includes a two-dimensionally arranged matrix of photoelectric conversion elements corresponding to pixels of a picked-up image. Each of the photoelectric conversion elements includes a first conductive semiconductor region and a second conductive semiconductor region between which an uneven junction plane is formed.
摘要:
A solid-state image pickup device according to an embodiment includes a photoelectric conversion element, a first floating diffusion, and a second floating diffusion. The photoelectric conversion element photoelectrically converts incident light into signal charge. The first floating diffusion retains the signal charge that is transferred from the photoelectric conversion element. The second floating diffusion is electrically connectable to or separable from the first floating diffusion and is capable of retaining the signal charge.
摘要:
According to one embodiment of the present invention, a solid-state imaging device is provided. The solid-state imaging device includes a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first-conductivity-type semiconductor region is disposed for each pixel of a captured image. The second-conductivity-type semiconductor region constitutes a photoelectric conversion element by a PN junction with the first-conductivity-type semiconductor region, and has second-conductivity-type impurity concentration that decreases from the center of the photoelectric conversion element toward a transfer gate side for transferring signal charge.
摘要:
According to one embodiment, a solid-state imaging device includes a unit cell forming region in a pixel array of a semiconductor substrate, a pixel which is provided in the unit cell forming region and generates a signal charge based on a light signal, and an amplification transistor which is provided in the unit cell forming region and amplifies a potential associated with the signal charge transferred from the pixel to a floating diffusion. The amplification transistor includes a gate electrode having one or more first embedded portions embedded in one or more trenches in the semiconductor substrate through a first gate insulating film.
摘要:
A solid-state imaging device according to an embodiment includes a first charge detector, a first output circuit and a pulse generator. The first charge detector includes a plurality of first pixels and is configured to detect charges accumulated in the plurality of first pixels. The first output circuit is configured to amplify the charges detected by the first charge detector and output the charges as an output signal. The pulse generator is configured to generate a sampling pulse to extract a charge signal from the output signal during a period different from a signal output period in which the output signal is outputted.
摘要:
According to one embodiment, a solid-state imaging device is provided which comprises a floating diffusion, a transfer gate, and a photoelectric conversion element. The floating diffusion is provided in a surface of a semiconductor layer. The transfer gate extends inward from the surface of the semiconductor layer and bends in the semiconductor layer toward the floating diffusion side. The photoelectric conversion element is provided in part of the semiconductor layer on the opposite side of the transfer gate from the floating diffusion and stretches from the side-surface side of the transfer gate to a position under the bottom thereof.
摘要:
According to one embodiment, a solid-state image pickup device includes a pixel array that includes a two-dimensionally arranged matrix of photoelectric conversion lements corresponding to pixels of a picked-up image. Each of the photoelectric conversion elements includes a first conductive semiconductor region and a second conductive semiconductor region between which an uneven junction plane is formed.
摘要:
According to an embodiment of the present invention, a solid state image pickup device is provided. The solid state image pickup device includes a plurality of photoelectric conversion elements, a light shielding unit, and a correction unit. The plurality of photoelectric conversion elements photoelectrically converts an incident light into charges corresponding to a received light amount. The light shielding unit is disposed in a light receiving surface side of a predetermined photoelectric conversion element of the plurality of photoelectric conversion elements and shields an incident light entering the predetermined photoelectric conversion element from a light receiving surface side. The correction unit corrects a received light amount of an incident light received by another photoelectric conversion element other than the predetermined photoelectric conversion element, based on a received light amount of an incident light received by the predetermined photoelectric conversion element.