公开(公告)号：US09159752B2

公开(公告)日：2015-10-13

申请号：US14093632

申请日：2013-12-02

申请人： Kabushiki Kaisha Toshiba

发明人： Motohiro Maeda ,  Nagataka Tanaka

IPC分类号： H01L31/062 ,  H01L27/146 ,  H04N5/335

CPC分类号： H01L27/14683 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H04N5/2257 ,  H04N5/335

摘要： According to one embodiment, a solid-state image pickup device includes a pixel array that includes a two-dimensionally arranged matrix of photoelectric conversion elements corresponding to pixels of a picked-up image. Each of the photoelectric conversion elements includes a first conductive semiconductor region and a second conductive semiconductor region between which an uneven junction plane is formed.

摘要翻译： 根据一个实施例，固态图像拾取装置包括像素阵列，其包括对应于拾取图像的像素的二维排列的光电转换元件矩阵。 每个光电转换元件包括第一导电半导体区域和形成有不平坦结面的第二导电半导体区域。

公开(公告)号：US20150263212A1

公开(公告)日：2015-09-17

申请号：US14635303

申请日：2015-03-02

申请人： Kabushiki Kaisha Toshiba

发明人： Shinji UYA ,  Nagataka Tanaka ,  Mokuji Kageyama ,  Hideo Numata

IPC分类号： H01L31/105 ,  H01L27/146 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/3221 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14656 ,  H01L27/14689 ,  H01L31/02162 ,  H01L31/02327 ,  H01L31/1037 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

摘要： According to one embodiment, a substrate for semiconductor devices includes a P-type semiconductor substrate, a P-type or N-type semiconductor layer, and a P-type or N-type epitaxial layer. The P-type or N-type semiconductor layer is provided at a surface layer of the semiconductor substrate and has a resistance value lower than a resistance value of the semiconductor substrate. The P-type or N-type epitaxial layer is provided on a surface of the semiconductor layer and has a resistance value higher than the resistance value of the semiconductor layer.

摘要翻译： 根据一个实施例，用于半导体器件的衬底包括P型半导体衬底，P型或N型半导体层以及P型或N型外延层。 P型或N型半导体层设置在半导体衬底的表面层上，其电阻值低于半导体衬底的电阻值。 P型或N型外延层设置在半导体层的表面上，其电阻值高于半导体层的电阻值。

公开(公告)号：US09401378B2

公开(公告)日：2016-07-26

申请号：US14702808

申请日：2015-05-04

申请人： Kabushiki Kaisha Toshiba

发明人： Nagataka Tanaka

IPC分类号： H01L27/146

CPC分类号： H01L27/14612 ,  H01L27/146 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14683

摘要： According to one embodiment, a solid-state imaging device is provided. The solid-state imaging device includes a photoelectric conversion element, a floating diffusion, and an amplifying transistor. The photoelectric conversion element photoelectrically convert incident light into electric charges with an amount corresponding to an amount of the incident light, and accumulates the electric charges. The floating diffusion accumulates the electric charges read out from the photoelectric conversion element. The amplifying transistor includes a gate electrode connected to the floating diffusion, and outputs a signal based on the amount of the electric charges accumulated in the floating diffusion. The amplifying transistor includes a first concentration region disposed in at least a part of the maximum region of the depletion layer and a second concentration region disposed at a deeper position than the first concentration region, and has higher impurity concentration than that of the first concentration region.

公开(公告)号：USRE46635E1

公开(公告)日：2017-12-12

申请号：US14673467

申请日：2015-03-30

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Nagataka Tanaka

IPC分类号： H01L31/0232 ,  H01L27/00 ,  H04N5/225 ,  G02B27/10

CPC分类号： G02B3/0056 ,  H01L27/14605 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685 ,  H04N5/2257

摘要： A solid-state imaging device includes light receiving sections which are arranged in an image area on a semiconductor substrate at the same pitch and which light exiting from an imaging optical system enters, condensing lenses respectively arranged above the light receiving sections, and light shielding sections each of which is provided at one end of each of the light receiving sections. The condensing lenses are arranged in a peripheral portion in a first direction in the image area at a first pitch, and arranged in a peripheral portion in a second direction opposite the first direction at a second pitch which is smaller than the first pitch.

公开(公告)号：US20150042854A1

公开(公告)日：2015-02-12

申请号：US14161051

申请日：2014-01-22

申请人： Kabushiki Kaisha Toshiba

发明人： Motohiro MAEDA ,  Nagataka Tanaka

IPC分类号： H01L27/148 ,  H04N5/369 ,  H01L27/146

CPC分类号： H01L27/148 ,  H01L27/1461 ,  H01L27/14643 ,  H01L27/14689

摘要： According to one embodiment of the present invention, a solid-state imaging device is provided. The solid-state imaging device includes a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first-conductivity-type semiconductor region is disposed for each pixel of a captured image. The second-conductivity-type semiconductor region constitutes a photoelectric conversion element by a PN junction with the first-conductivity-type semiconductor region, and has second-conductivity-type impurity concentration that decreases from the center of the photoelectric conversion element toward a transfer gate side for transferring signal charge.

摘要翻译： 根据本发明的一个实施例，提供了一种固态成像装置。 固态成像装置包括第一导电型半导体区域和第二导电型半导体区域。 为捕获图像的每个像素设置第一导电型半导体区域。 第二导电型半导体区域通过与第一导电型半导体区域的PN结构成光电转换元件，并且具有从光电转换元件的中心朝向转移栅极减小的第二导电型杂质浓度 侧用于传送信号电荷。

公开(公告)号：US08884348B2

公开(公告)日：2014-11-11

申请号：US14091480

申请日：2013-11-27

申请人： Kabushiki Kaisha Toshiba

发明人： Nagataka Tanaka

IPC分类号： H01L31/062 ,  H01L27/146 ,  H04N9/04 ,  H04N5/355 ,  H04N5/3745

CPC分类号： H01L27/14645 ,  H01L27/14609 ,  H01L27/14621 ,  H04N5/35563 ,  H04N5/37457 ,  H04N9/045 ,  H04N2209/045

摘要： According to one embodiment, a solid-state imaging device includes an area and color filters. The area includes pixels. Each of the pixels includes a first photodiode, a first read transistor, a second photodiode, a second read transistor, a floating diffusion, a reset transistor, and an amplifying transistor. The first photodiode performs photoelectric conversion. The first read transistor reads a signal charge. The second photodiode has a photosensitivity lower than the first photodiode. The second read transistor reads a signal charge. The floating diffusion stores the signal charges. The reset transistor resets a potential of the floating diffusion. The amplifying transistor amplifies the potential of the floating diffusion. The color filters include a first and a second filters. The relationship QSAT1>QSAT2 is satisfied. When a saturation level of the first filter is denoted by QSAT1 and a saturation level of the second filter is denoted by QSAT2.

摘要翻译： 根据一个实施例，固态成像装置包括区域和滤色器。 该区域包括像素。 每个像素包括第一光电二极管，第一读晶体管，第二光电二极管，第二读晶体管，浮动扩散，复位晶体管和放大晶体管。 第一个光电二极管执行光电转换。 第一个读取晶体管读取一个信号电荷。 第二光电二极管的光敏性低于第一光电二极管。 第二个读取晶体管读取信号电荷。 浮动扩散存储信号电荷。 复位晶体管复位浮动扩散的电位。 放大晶体管放大浮动扩散的电位。 滤色器包括第一和第二滤光片。 满足QSAT1> QSAT2的关系。 当QSAT1表示第一滤波器的饱和电平，并且由QSAT2表示第二滤波器的饱和电平时。

公开(公告)号：US09331122B2

公开(公告)日：2016-05-03

申请号：US14161051

申请日：2014-01-22

申请人： Kabushiki Kaisha Toshiba

发明人： Motohiro Maeda ,  Nagataka Tanaka

IPC分类号： H04N3/14 ,  H01L27/148 ,  H01L27/146

CPC分类号： H01L27/148 ,  H01L27/1461 ,  H01L27/14643 ,  H01L27/14689

摘要： According to one embodiment of the present invention, a solid-state imaging device is provided. The solid-state imaging device includes a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first-conductivity-type semiconductor region is disposed for each pixel of a captured image. The second-conductivity-type semiconductor region constitutes a photoelectric conversion element by a PN junction with the first-conductivity-type semiconductor region, and has second-conductivity-type impurity concentration that decreases from the center of the photoelectric conversion element toward a transfer gate side for transferring signal charge.

摘要翻译： 根据本发明的一个实施例，提供了一种固态成像装置。 固态成像装置包括第一导电型半导体区域和第二导电型半导体区域。 为捕获图像的每个像素设置第一导电型半导体区域。 第二导电型半导体区域通过与第一导电型半导体区域的PN结构成光电转换元件，并且具有从光电转换元件的中心朝向转移栅极减小的第二导电型杂质浓度 侧用于传送信号电荷。

公开(公告)号：US09312296B2

公开(公告)日：2016-04-12

申请号：US14483464

申请日：2014-09-11

申请人： Kabushiki Kaisha Toshiba

发明人： Hisayuki Taruki ,  Nagataka Tanaka

IPC分类号： H01L27/146 ,  H01L21/762 ,  H01L31/02 ,  H01L31/0352 ,  H01L27/142

CPC分类号： H01L27/14641 ,  H01L21/76224 ,  H01L27/142 ,  H01L27/146 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/02002 ,  H01L31/02016 ,  H01L31/02161 ,  H01L31/0352 ,  H01L31/035281

摘要： A solid-state imaging device according to an embodiment includes photoelectric conversion devices, a dopant layer, a low concentration region, and a transistor. The photoelectric conversion devices are disposed on a semiconductor layer. The dopant layer is disposed on a layer same as the semiconductor layer where photoelectric conversion devices are arrayed, and includes dopant having a conductivity type reverse to a charge accumulating region of the photoelectric conversion device. The low concentration region is disposed inside the dopant layer and has dopant concentration lower than the dopant layer. A transistor includes an active region disposed on the dopant layer.

摘要翻译： 根据实施例的固态成像装置包括光电转换装置，掺杂剂层，低浓度区域和晶体管。 光电转换元件设置在半导体层上。 掺杂剂层设置在与排列有光电转换元件的半导体层相同的层上，并且包括具有与光电转换器件的电荷累积区域相反的导电类型的掺杂剂。 低浓度区域设置在掺杂剂层内，掺杂剂浓度低于掺杂剂层。 晶体管包括设置在掺杂剂层上的有源区。

公开(公告)号：US09053995B2

公开(公告)日：2015-06-09

申请号：US14105887

申请日：2013-12-13

申请人： Kabushiki Kaisha Toshiba

发明人： Nagataka Tanaka

IPC分类号： H01L31/14 ,  H01L27/146

CPC分类号： H01L27/14612 ,  H01L27/146 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14683

摘要： According to one embodiment, a solid-state imaging device is provided. The solid-state imaging device includes a photoelectric conversion element, a floating diffusion, and an amplifying transistor. The photoelectric conversion element photoelectrically convert incident light into electric charges with an amount corresponding to an amount of the incident light, and accumulates the electric charges. The floating diffusion accumulates the electric charges read out from the photoelectric conversion element. The amplifying transistor includes a gate electrode connected to the floating diffusion, and outputs a signal based on the amount of the electric charges accumulated in the floating diffusion. The amplifying transistor includes a first concentration region disposed in at least a part of the maximum region of the depletion layer and a second concentration region disposed at a deeper position than the first concentration region, and has higher impurity concentration than that of the first concentration region.

摘要翻译： 根据一个实施例，提供了一种固态成像装置。 固态成像装置包括光电转换元件，浮动扩散和放大晶体管。 光电转换元件将入射光光电转换成与入射光量对应的量的电荷，并蓄积电荷。 浮动扩散累积从光电转换元件读出的电荷。 放大晶体管包括与浮动扩散连接的栅电极，并且输出基于在浮动扩散中累积的电荷量的信号。 放大晶体管包括设置在耗尽层的最大区域的至少一部分中的第一浓度区域和设置在比第一浓度区域更深的位置的第二浓度区域，并且具有比第一浓度区域更高的杂质浓度 。

公开(公告)号：US20150035101A1

公开(公告)日：2015-02-05

申请号：US14174360

申请日：2014-02-06

申请人： Kabushiki Kaisha Toshiba

发明人： Junji Naruse ,  Nagataka Tanaka

IPC分类号： H01L27/146

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14627

摘要： According to one embodiment, a solid-state imaging device is provided. The solid-state imaging device includes a photoelectric conversion element, a first anti-reflection film, an intermediate film, and a second anti-reflection film. The photoelectric conversion element is disposed corresponding to each of a plurality of colored lights. The first anti-reflection film is disposed on a photo-receiving surface side of the photoelectric conversion element. The intermediate film is disposed on a photo-receiving surface side of the first anti-reflection film. The second anti-reflection film is disposed on a photo-receiving surface side of the intermediate film. At least one of the first anti-reflection film, the intermediate film, and the second anti-reflection film has different film thicknesses for respective colored lights to be received.

摘要翻译： 根据一个实施例，提供了一种固态成像装置。 固态成像装置包括光电转换元件，第一抗反射膜，中间膜和第二防反射膜。 光电转换元件对应于多个彩色光中的每一个设置。 第一防反射膜设置在光电转换元件的光接收表面侧。 中间膜设置在第一防反射膜的光接收表面侧。 第二防反射膜设置在中间膜的光接收表面侧。 第一防反射膜，中间膜和第二防反射膜中的至少一个对于要接收的各个着色光具有不同的膜厚度。