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公开(公告)号:US06869892B1
公开(公告)日:2005-03-22
申请号:US10767470
申请日:2004-01-30
申请人: Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki , David Paul Brunco , Steven Robert Soss , Anthony Dip
发明人: Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki , David Paul Brunco , Steven Robert Soss , Anthony Dip
IPC分类号: C23C8/10 , H01L21/316 , H01L21/31
CPC分类号: H01L21/02238 , C23C8/10 , H01L21/02255 , H01L21/31662
摘要: A method of oxidizing work pieces according to the present invention comprises the steps of: containing a plurality of work pieces W in a processing vessel 22 which has a predetermined length and is capable forming a vacuum therein, oxidizing surfaces of the work pieces in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. The oxidative gas and the reductive gas are respectively supplied into the processing vessel in the longitudinal direction. Parts of the reductive gas are additionally supplied from at least two or more independently controlled gas nozzles located at separate locations in the longitudinal direction of the processing vessel. The gas flow rate through each nozzle is set depending on any combination of the work pieces composed of product wafers, dummy wafers, and monitor wafers in the processing vessel.
摘要翻译: 根据本发明的氧化工件的方法包括以下步骤:在具有预定长度并且能够形成真空的处理容器22中容纳多个工件W,在工作气氛中氧化工件的表面 包括通过将氧化性气体和还原性气体供应到处理容器中以与气体相互作用而产生的活性氧和活性羟基。 氧化性气体和还原气体分别沿长度方向供给到处理容器内。 部分还原气体从位于处理容器的纵向方向上的分开位置的至少两个或多个独立控制的气体喷嘴另外供应。 通过每个喷嘴的气体流速根据由处理容器中的产品晶片,虚拟晶片和监视晶片组成的工件的任何组合来设定。
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2.
公开(公告)号:US20090272976A1
公开(公告)日:2009-11-05
申请号:US12431618
申请日:2009-04-28
IPC分类号: H01L29/786 , H01L21/336
CPC分类号: H01L21/823814 , H01L21/26506 , H01L21/28255 , H01L21/823807 , H01L29/165 , H01L29/7833
摘要: A method for producing one or more nMOSFET devices and one or more pMOSFET devices on the same semiconductor substrate is disclosed. In one aspect, the method relates to the use of a single activation anneal that serves for both Si NMOS and Ge pMOS. By use of a solid phase epitaxial regrowth (SPER) process for the Si nMOS, the thermal budget for the Si NMOS can be lowered to be compatible with Ge pMOS.
摘要翻译: 公开了一种在同一半导体衬底上制造一个或多个nMOSFET器件和一个或多个pMOSFET器件的方法。 在一个方面,该方法涉及使用用于Si NMOS和Ge pMOS的单个激活退火。 通过使用Si nMOS的固相外延再生(SPER)工艺,可以降低Si NMOS的热预算以与Ge pMOS相容。
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3.
公开(公告)号:US08207030B2
公开(公告)日:2012-06-26
申请号:US12431618
申请日:2009-04-28
IPC分类号: H01L21/8238
CPC分类号: H01L21/823814 , H01L21/26506 , H01L21/28255 , H01L21/823807 , H01L29/165 , H01L29/7833
摘要: A method for producing one or more nMOSFET devices and one or more pMOSFET devices on the same semiconductor substrate is disclosed. In one aspect, the method relates to the use of a single activation anneal that serves for both Si nMOS and Ge pMOS. By use of a solid phase epitaxial regrowth (SPER) process for the Si nMOS, the thermal budget for the Si nMOS can be lowered to be compatible with Ge pMOS.
摘要翻译: 公开了一种在同一半导体衬底上制造一个或多个nMOSFET器件和一个或多个pMOSFET器件的方法。 在一个方面,该方法涉及用于Si nMOS和Ge pMOS的单一激活退火的使用。 通过使用Si nMOS的固相外延再生长(SPER)工艺,可以降低Si nMOS的热预算以与Ge pMOS相容。
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