公开(公告)号：US06869892B1

公开(公告)日：2005-03-22

申请号：US10767470

申请日：2004-01-30

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki ,  David Paul Brunco ,  Steven Robert Soss ,  Anthony Dip

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki ,  David Paul Brunco ,  Steven Robert Soss ,  Anthony Dip

IPC分类号： C23C8/10 ,  H01L21/316 ,  H01L21/31

CPC分类号： H01L21/02238 ,  C23C8/10 ,  H01L21/02255 ,  H01L21/31662

摘要： A method of oxidizing work pieces according to the present invention comprises the steps of: containing a plurality of work pieces W in a processing vessel 22 which has a predetermined length and is capable forming a vacuum therein, oxidizing surfaces of the work pieces in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. The oxidative gas and the reductive gas are respectively supplied into the processing vessel in the longitudinal direction. Parts of the reductive gas are additionally supplied from at least two or more independently controlled gas nozzles located at separate locations in the longitudinal direction of the processing vessel. The gas flow rate through each nozzle is set depending on any combination of the work pieces composed of product wafers, dummy wafers, and monitor wafers in the processing vessel.

摘要翻译： 根据本发明的氧化工件的方法包括以下步骤：在具有预定长度并且能够形成真空的处理容器22中容纳多个工件W，在工作气氛中氧化工件的表面 包括通过将氧化性气体和还原性气体供应到处理容器中以与气体相互作用而产生的活性氧和活性羟基。 氧化性气体和还原气体分别沿长度方向供给到处理容器内。 部分还原气体从位于处理容器的纵向方向上的分开位置的至少两个或多个独立控制的气体喷嘴另外供应。 通过每个喷嘴的气体流速根据由处理容器中的产品晶片，虚拟晶片和监视晶片组成的工件的任何组合来设定。

公开(公告)号：US20080056967A1

公开(公告)日：2008-03-06

申请号：US11898366

申请日：2007-09-11

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

IPC分类号： B01J8/04 ,  G05B21/00

CPC分类号： C23C8/12 ,  C23C8/16 ,  H01L21/02164 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.

摘要翻译： 根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元 在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。

公开(公告)号：US07304003B2

公开(公告)日：2007-12-04

申请号：US11086671

申请日：2005-03-23

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

IPC分类号： H01L21/31

CPC分类号： C23C8/12 ,  C23C8/16 ,  H01L21/02164 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.

摘要翻译： 根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元 在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。

公开(公告)号：US07926445B2

公开(公告)日：2011-04-19

申请号：US11898366

申请日：2007-09-11

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

IPC分类号： C23C16/00 ,  C23C16/455

CPC分类号： C23C8/12 ,  C23C8/16 ,  H01L21/02164 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.

摘要翻译： 根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元 在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。

公开(公告)号：US20050272269A1

公开(公告)日：2005-12-08

申请号：US11086671

申请日：2005-03-23

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

IPC分类号： H01L21/31 ,  C23C8/12 ,  C23C8/16 ,  C23C16/00 ,  H01L21/316 ,  H01L21/469

CPC分类号： C23C8/12 ,  C23C8/16 ,  H01L21/02164 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.

摘要翻译： 根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元 在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。

公开(公告)号：US20050241578A1

公开(公告)日：2005-11-03

申请号：US11072416

申请日：2005-02-17

申请人： Kimiya Aoki ,  Keisuke Suzuki ,  Toshiyuki Ikeuchi

发明人： Kimiya Aoki ,  Keisuke Suzuki ,  Toshiyuki Ikeuchi

IPC分类号： H01L21/283 ,  B05C11/00 ,  C23C16/00 ,  H01L21/00 ,  H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/67109

摘要： The invention is an oxidizing method for an object to be processed, the oxidizing method including: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at the processing container, each of the plurality of objects to be processed having an exposed silicon layer and an exposed tungsten layer; an active-species forming step of supplying the oxidative gas and the reducing gas into the processing container, causing the both gases to react on each other under a reduced pressure, and generating active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the silicon layers of the plurality of objects to be processed by means of the active species.

摘要翻译： 本发明是一种用于被处理物体的氧化方法，其氧化方法包括：将待处理的多个物体排列在可以被抽真空的处理容器内的排列步骤，具有预定长度的处理容器， 在处理容器上设置氧化性气体单元和还原气体供给单元，所述多个被处理体中的每一个具有暴露的硅层和暴露的钨层; 将氧化性气体和还原性气体供给到处理容器中的活性物质形成工序，使两气体在减压下相互反应，并在处理容器中产生活性氧和活性羟基; 以及通过活性物质氧化待处理的多个待处理物体的硅层的表面的氧化步骤。

公开(公告)号：US07700156B2

公开(公告)日：2010-04-20

申请号：US10879034

申请日：2004-06-30

申请人： Kimiya Aoki ,  Katsushi Suzuki ,  Asami Shirakawa ,  Kenji Tago ,  Keisuke Suzuki ,  Kazuo Saki ,  Shinji Mori

发明人： Kimiya Aoki ,  Katsushi Suzuki ,  Asami Shirakawa ,  Kenji Tago ,  Keisuke Suzuki ,  Kazuo Saki ,  Shinji Mori

IPC分类号： C23C16/00 ,  C23C14/10 ,  C23C16/40

CPC分类号： H01L21/67109 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.

摘要翻译： 在形成氧化硅膜的方法中，将表面上具有硅层的目标基板装载到反应容器内的处理区域中，同时将处理区域设定为负载温度为400℃以下。 然后，将装载目标基板的处理区域从加载温度加热到650℃以上的处理温度。 在处理区域的加热期间，将水蒸汽供应到反应容器中，同时将水蒸汽设置为在处理区域的气氛中具有第一浓度，并将处理区域设定为具有第一减压。 在将处理区域加热到处理温度之后，将氧化气体供应到反应容器中，从而氧化硅层以形成氧化硅膜。

公开(公告)号：US20060003542A1

公开(公告)日：2006-01-05

申请号：US11157170

申请日：2005-06-21

申请人： Keisuke Suzuki ,  Kimiya Aoki ,  Kota Umezawa ,  Thomas Wilhelm Matthes ,  Uwe Wellhausen ,  Norbert Dyroff

发明人： Keisuke Suzuki ,  Kimiya Aoki ,  Kota Umezawa ,  Thomas Wilhelm Matthes ,  Uwe Wellhausen ,  Norbert Dyroff

IPC分类号： H01L21/76

CPC分类号： H01L21/02238 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/76235

摘要： A method of oxidizing an object to be processed comprises the steps of: providing an object to be processed W having a groove 4 formed on its surface in a processing vessel 22 capable of forming a vacuum therein, oxidizing the surface of the object to be processed in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. A temperature in the processing vessel during the oxidizing step is set to be equal to or less than 900° C. Thus, not only corner portions of shoulders of a trench (groove) but also corner portions of a bottom portion of the trench can be rounded to have curved surfaces so as to prevent a generation of facet.

摘要翻译： 氧化被处理物的方法包括以下步骤：提供待处理物体W，其具有在其表面上形成有能够在其中形成真空的处理容器22中的凹槽4，氧化被处理物体的表面 在包括通过将氧化性气体和还原性气体供应到处理容器中以使气体相互作用而产生的活性氧和活性羟基的气氛中。 氧化步骤中的处理容器内的温度设定为900℃以下。因此，沟槽（槽）的肩部的角部以及沟槽的底部的角部不仅可以是 圆形以具有曲面以便防止产生小面。

公开(公告)号：US20050056220A1

公开(公告)日：2005-03-17

申请号：US10879034

申请日：2004-06-30

申请人： Kimiya Aoki ,  Katsushi Suzuki ,  Asami Shirakawa ,  Kenji Tago ,  Keisuke Suzuki ,  Kazuo Saki ,  Shinji Mori

发明人： Kimiya Aoki ,  Katsushi Suzuki ,  Asami Shirakawa ,  Kenji Tago ,  Keisuke Suzuki ,  Kazuo Saki ,  Shinji Mori

IPC分类号： H01L21/316 ,  C23C16/00 ,  H01L21/00 ,  H01L21/205 ,  H01L21/31

CPC分类号： H01L21/67109 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.

摘要翻译： 在形成氧化硅膜的方法中，将表面上具有硅层的目标基板装载到反应容器内的处理区域中，同时将处理区域设定为负载温度为400℃以下。 然后，将装载目标基板的处理区域从加载温度加热到650℃以上的处理温度。 在处理区域的加热期间，将水蒸汽供应到反应容器中，同时将水蒸汽设置为在处理区域的气氛中具有第一浓度，并将处理区域设定为具有第一减压。 在将处理区域加热到处理温度之后，将氧化气体供应到反应容器中，从而氧化硅层以形成氧化硅膜。

公开(公告)号：US07125811B2

公开(公告)日：2006-10-24

申请号：US10924853

申请日：2004-08-25

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kazuhide Hasebe

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kazuhide Hasebe

IPC分类号： H01L21/31

CPC分类号： C23C8/16 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen gas and oxygen gas into the process container while exhausting the process container. The oxidation method also includes causing the hydrogen gas and the oxygen gas to react with each other in the process container at a process temperature and a process pressure to generate water vapor, and oxidizing the surface of the target substrate by the water vapor. The process pressure is set at 2000 Pa (15 Torr) or more.

摘要翻译： 用于对目标基板的表面进行氧化的半导体工艺的氧化方法包括加热容纳目标基板的处理容器，并且在排出处理容器的同时将氢气和氧气供给到处理容器中。 氧化方法还包括使氢气和氧气在处理容器中在处理温度和工艺压力下彼此反应以产生水蒸汽，并通过水蒸汽氧化目标基底的表面。 工艺压力设定为2000Pa（15Torr）以上。