利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.171 秒)

    Multiple logical bits per memory cell in a memory device
    1.
    发明授权
    Multiple logical bits per memory cell in a memory device 失效
    存储器件中每个存储单元的多个逻辑位

    公开(公告)号：US06625055B1

    公开(公告)日：2003-09-23

    申请号：US10120113

    申请日：2002-04-09

    申请人： Kenneth K. Smith ,  Sarah M. Brandenberger ,  Darrel R. Bloomquist ,  Kenneth J. Eldredge ,  Andrew L. Van Brocklin ,  Peter J. Fricke

    发明人： Kenneth K. Smith ,  Sarah M. Brandenberger ,  Darrel R. Bloomquist ,  Kenneth J. Eldredge ,  Andrew L. Van Brocklin ,  Peter J. Fricke

    IPC分类号： G11C1100

    CPC分类号： G11C11/5692

    摘要： A read-only memory device is described having non-volatile memory cells that include a memory component connected between electrically conductive traces. A memory component is formed to include a resistor that indicates a resistance value when a potential is applied to a selected memory cell. The resistance value of a memory component in an individual memory cell corresponds to multiple logical bits. The resistance value of a memory component corresponding to a set of logical bits can be based on a thickness and/or an area of electrically resistive material that forms the memory component, and/or based on the geometric shape of the memory component, where different geometric shapes of the electrically resistive material have different resistance values that correspond to different sets of logical bits.

    摘要翻译： 描述了只读存储器件，其具有包括连接在导电迹线之间的存储器部件的非易失性存储器单元。 存储器部件形成为包括当电位被施加到所选择的存储器单元时指示电阻值的电阻器。 单个存储单元中的存储器组件的电阻值对应于多个逻辑位。 对应于一组逻辑位的存储器组件的电阻值可以基于形成存储器组件的电阻材料的厚度和/或面积，和/或基于存储器组件的几何形状，其中不同 电阻材料的几何形状具有不同的电阻值，其对应于不同的逻辑位组。

    Storage and retrieval for resistance-based memory devices
    2.
    发明授权
    Storage and retrieval for resistance-based memory devices 有权
    基于电阻的存储器件的存储和检索

    公开(公告)号：US06570782B1

    公开(公告)日：2003-05-27

    申请号：US10050668

    申请日：2002-01-16

    申请人： Sarah M. Brandenberger ,  Peter J. Fricke ,  Kenneth K. Smith

    发明人： Sarah M. Brandenberger ,  Peter J. Fricke ,  Kenneth K. Smith

    IPC分类号： G11C1700

    CPC分类号： G11C17/00

    摘要： Methods for storing a bit sequence are provided. A representative method for storing a bit sequence includes converting a first bit sequence containing a first number of low-resistance bits into a second bit sequence containing a second number of low-resistance bits that is lower than the first number of low-resistance bits, and then storing the second bit sequence in a resistance-based memory device. Systems, computer-readable media, and other methods for storing and retrieving a bit sequence are also provided.

    摘要翻译： 提供了存储位序列的方法。 用于存储位序列的代表性方法包括将包含第一数量的低电阻位的第一位序列转换为包含低于第一数量的低电阻位的第二数量的低电阻位的第二位序列， 然后将第二比特序列存储在基于电阻的存储装置中。 还提供了用于存储和检索比特序列的系统，计算机可读介质和其他方法。

    Systems and methods for reducing the effect of noise while reading data from memory
    3.
    发明授权
    Systems and methods for reducing the effect of noise while reading data from memory 有权
    用于在从存储器读取数据的同时降低噪声的影响的系统和方法

    公开(公告)号：US06678197B1

    公开(公告)日：2004-01-13

    申请号：US10273623

    申请日：2002-10-18

    申请人： Frederick A. Perner ,  Kenneth K. Smith ,  David H. McIntyre ,  Sarah M. Brandenberger ,  Terrel R. Munden ,  Robert Sesek

    发明人： Frederick A. Perner ,  Kenneth K. Smith ,  David H. McIntyre ,  Sarah M. Brandenberger ,  Terrel R. Munden ,  Robert Sesek

    IPC分类号： G11C702

    CPC分类号： G11C7/02 ,  G11C7/06 ,  G11C7/1006

    摘要： Systems and methods for reducing the effect of noise while reading data from memory, are provided. One system embodiment includes a memory cell that stores a first data; multiple sensing devices that receive the first data and provide a first set of outputs; and a voting system that evaluates the first set of outputs to determine whether one of the outputs of the first set is valid data from the memory cell. One method embodiment includes reading data in parallel that is stored in a memory cell to provide outputs; and evaluating the outputs to determine whether one of the outputs is valid data from the memory cell.

    摘要翻译： 提供了用于在从存储器读取数据的同时降低噪声的影响的系统和方法。 一个系统实施例包括存储第一数据的存储单元; 多个感测装置，其接收第一数据并提供第一组输出; 以及投票系统，其评估所述第一组输出以确定所述第一组的输出中的一个是来自所述存储器单元的有效数据。 一种方法实施例包括并行读取存储在存储单元中以提供输出的数据; 以及评估所述输出以确定所述输出中的一个是来自所述存储器单元的有效数据。

    Storage device including a probe having an electrically conductive tip portion for electrical contact with a storage medium
    4.
    发明授权
    Storage device including a probe having an electrically conductive tip portion for electrical contact with a storage medium 失效
    存储装置包括具有用于与存储介质电接触的导电尖端部分的探针

    公开(公告)号：US07254108B2

    公开(公告)日：2007-08-07

    申请号：US10800502

    申请日：2004-03-15

    申请人： Corbin L. Champion ,  Sarah M. Brandenberger

    发明人： Corbin L. Champion ,  Sarah M. Brandenberger

    IPC分类号： G11B7/00

    CPC分类号： G11B9/1445 ,  G11B9/149

    摘要： A storage device includes a probe having a tip, the tip comprising a first portion and a second portion. The storage device also includes a storage medium having a surface, where the tip of the probe is adapted to form a dent in the storage medium. The second portion of the tip is electrically contacted to the surface of the storage medium in response to the tip being engaged in the dent, and the second portion of the tip is spaced apart from the surface of the storage medium in response to the first portion being engaged on the surface of the storage medium and not engaged in the dent.

    摘要翻译： 存储装置包括具有尖端的探针，所述尖端包括第一部分和第二部分。 存储装置还包括具有表面的存储介质，其中探针的尖端适于在存储介质中形成凹陷。 尖端的第二部分响应于尖端接合在凹陷中而与存储介质的表面电接触，并且尖端的第二部分响应于第一部分与存储介质的表面间隔开 接合在存储介质的表面上并且不接合在凹陷中。

    Minimizing errors in a magnetoresistive solid-state storage device
    5.
    发明授权
    Minimizing errors in a magnetoresistive solid-state storage device 有权
    减小磁阻固态存储装置的误差

    公开(公告)号：US06762952B2

    公开(公告)日：2004-07-13

    申请号：US10138074

    申请日：2002-05-01

    申请人： Terrel R. Munden ,  Sarah M. Brandenberger

    发明人： Terrel R. Munden ,  Sarah M. Brandenberger

    IPC分类号： G11C1100

    CPC分类号： G11C11/15

    摘要： Exemplar embodiments are disclosed which allow errors in a magnetoresistive solid-state storage device, such as a magnetic random access memory (MRAM) device, to be minimized. An illustrative method includes the steps of identifying cells in the device which have a failure mode characterized by a propensity to remain in a particular orientation of magnetization, mapping the location of the identified cells, and compensating for the failure mode of a cell at a mapped location. Systems and computer readable media are also provided.

    摘要翻译： 公开了允许将诸如磁随机存取存储器（MRAM）装置的磁阻固态存储装置中的错误最小化的示例性实施例。 一种说明性方法包括以下步骤：鉴别具有故障模式的设备中的小区，其特征在于保持特定磁化取向的倾向，映射所识别的小区的位置，以及补偿映射的小区的故障模式 位置。 还提供了系统和计算机可读介质。

    Storage device having a probe with plural tips
    8.
    发明授权
    Storage device having a probe with plural tips 失效
    存储装置具有多个尖端的探针

    公开(公告)号：US07167435B2

    公开(公告)日：2007-01-23

    申请号：US10796730

    申请日：2004-03-09

    申请人： Corbin L. Champion ,  Sarah M. Brandenberger

    发明人： Corbin L. Champion ,  Sarah M. Brandenberger

    IPC分类号： G11B7/00

    CPC分类号： G11B9/04 ,  B82Y10/00 ,  G11B9/1409

    摘要： A storage device includes a probe having plural tips, and a storage medium having a surface. At least a first one of the tips is adapted to form a dent in the storage medium, and at least a second one of the tips is adapted to be electrically contact the surface of the storage medium in response to the first tip being engaged in the dent. The second tip is electrically isolated from the storage medium in response to the first tip being engaged on the surface of the storage medium and not being engaged in the dent.

    摘要翻译： 存储装置包括具有多个尖端的探针和具有表面的存储介质。 至少第一个尖端适于在存储介质中形成凹陷，并且至少第二个尖端适于与存储介质的表面电接触，以响应于第一尖端接合在存储介质中 凹痕。 响应于第一尖端接合在存储介质的表面上并且不接合在凹陷中，第二尖端与存储介质电隔离。