公开(公告)号：US20250017020A1

公开(公告)日：2025-01-09

申请号：US18762786

申请日：2024-07-03

Applicant: Kioxia Corporation

Inventor： Yoko YOSHIMURA ,  Kiwamu Sakuma ,  Kunifumi SUZUKI ,  Hidesato ISHIDA

IPC: H10B51/20 ,  H01L21/28 ,  H01L23/528 ,  H01L23/532 ,  H01L29/51

Abstract: A semiconductor memory device includes a semiconductor layer; a gate electrode; a first insulating film provided between the semiconductor layer and the gate electrode, and including at least one of oxygen, hafnium, or a first additive element; and a second insulating film provided between the first insulating film and the gate electrode. The first insulating film includes a first additive region, a second additive region provided between the first additive region and the gate electrode, and a memory region provided between the first additive region and the second additive region. The first additive region includes a second additive element selected from a group consisting of ruthenium, titanium, molybdenum, tantalum, tungsten, platinum, and combinations thereof. The second additive region includes a third additive element selected group consisting of ruthenium, titanium, molybdenum, tantalum, tungsten, platinum, and combinations thereof.