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公开(公告)号:US20250017020A1
公开(公告)日:2025-01-09
申请号:US18762786
申请日:2024-07-03
Applicant: Kioxia Corporation
Inventor: Yoko YOSHIMURA , Kiwamu Sakuma , Kunifumi SUZUKI , Hidesato ISHIDA
IPC: H10B51/20 , H01L21/28 , H01L23/528 , H01L23/532 , H01L29/51
Abstract: A semiconductor memory device includes a semiconductor layer; a gate electrode; a first insulating film provided between the semiconductor layer and the gate electrode, and including at least one of oxygen, hafnium, or a first additive element; and a second insulating film provided between the first insulating film and the gate electrode. The first insulating film includes a first additive region, a second additive region provided between the first additive region and the gate electrode, and a memory region provided between the first additive region and the second additive region. The first additive region includes a second additive element selected from a group consisting of ruthenium, titanium, molybdenum, tantalum, tungsten, platinum, and combinations thereof. The second additive region includes a third additive element selected group consisting of ruthenium, titanium, molybdenum, tantalum, tungsten, platinum, and combinations thereof.