公开(公告)号：US20210257301A1

公开(公告)日：2021-08-19

申请号：US16932895

申请日：2020-07-20

Applicant: Kioxia Corporation

Inventor： Hiroshi MATSUMOTO

IPC: H01L23/535 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768

Abstract: A semiconductor device according to an embodiment includes a plurality of conductive layers, a plurality of contacts, a plurality of dielectric members, a channel body, and a memory film. The plurality of conductive layers is stacked to be separated from each other and formed in a plate shape extending in a direction intersecting a stacking direction so as to extend over first and second regions. Each of the plurality of contacts penetrates a different number of conductive layers among the plurality of conductive layers and is connected to a different conductive layer of the plurality of conductive layers at a different one of positions of the plurality of conductive layers stacked in the first region. Each of the plurality of dielectric members is arranged from substantially same height position to a different one of height positions and connected to a different one of the plurality of contacts.

公开(公告)号：US20220238432A1

公开(公告)日：2022-07-28

申请号：US17391527

申请日：2021-08-02

Applicant: Kioxia Corporation

Inventor： Hiroshi MATSUMOTO

IPC: H01L23/522 ,  H01L27/11582 ,  H01L27/11575

Abstract: A semiconductor device includes a first insulating layer on a semiconductor substrate. A first conductive film is on the first insulating layer. A first stacked structure is on the first conductive film and includes first electrode films and second insulating layers alternately stacked. A conductive member is along an outer edge of the first stacked structure around the first stacked structure and electrically connected to the semiconductor substrate. A second stacked structure is provided at least partially around the conductive member and includes the second insulating layers and third insulating layers alternately stacked on the first conductive film. The first conductive film includes a body part below the first stacked structure, a periphery part provided at a periphery of the body part away from the body part, and a slit part in the first conductive film between the conductive member and the second stacked structure in the periphery part.

公开(公告)号：US20230189517A1

公开(公告)日：2023-06-15

申请号：US17897733

申请日：2022-08-29

Applicant: Kioxia Corporation

Inventor： Hiroyuki YAMASAKI ,  Hiroshi MATSUMOTO ,  Masahisa SONODA ,  Kiyomitsu YOSHIDA

IPC: H01L27/11524 ,  H01L27/11519 ,  H01L27/11565 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11556

CPC classification number: H01L27/11524 ,  H01L27/11519 ,  H01L27/11565 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11556

Abstract: A semiconductor device includes a plurality of first electrode films stacked in a first direction and electrically isolated from each other; a plurality of semiconductor members extending in the first direction through the plurality of first electrode films; a first conductive film including a first surface and connected to the plurality of semiconductor members on the first surface; a first insulating film spaced from the first conductive film on a second surface of the first conductive film opposite to the first surface; a first edge member disposed in an edge area that surrounds an element area including the first electrode film, the semiconductor member, and the first conductive film; and a conductive first plug provided between the first edge member and the element area in the edge area and is in contact with the first insulating film.

公开(公告)号：US20220068948A1

公开(公告)日：2022-03-03

申请号：US17124808

申请日：2020-12-17

Applicant: Kioxia Corporation

Inventor： Takamasa ITO ,  Hiroshi MATSUMOTO

IPC: H01L27/11575 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11573

Abstract: A semiconductor device includes a semiconductor substrate on which a first insulation film is provided. A first conductive film is on the first insulation film. First electrode films are on the first conductive film and stacked. A charge accumulation member is between one of the first electrode films and the semiconductor member. The first conductive film includes a main body arranged below the first electrode films and an outer peripheral portion provided in an outer periphery of the main body to be apart from the main body. First and second slits are alternately provided in the outer peripheral portion, and extend along the outer periphery of the main body. The first and second slits are apart from each other as viewed in the stacking direction, and partly overlap each other as viewed in a first direction directed from the main body toward the outer peripheral portion.

公开(公告)号：US20230299015A1

公开(公告)日：2023-09-21

申请号：US17929437

申请日：2022-09-02

Applicant: Kioxia Corporation

Inventor： Hiroshi MATSUMOTO

IPC: H01L23/00 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11582

CPC classification number: H01L23/562 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11582

Abstract: A substrate includes a first region and a second region around the first region. A layer stack is above the substrate in the first region in a first direction. A first conductor is on the substrate in the second region and extends in the first direction. A second conductor is on the first conductor and extends in a direction approaching the second region from the first region. A third conductor is on the second conductor and extends in the first direction, includes an upper surface reaching a height of an upper surface of the layer stack. The third conductor is positioned farther from the first region than the first conductor. The third conductor is not opposed to the first conductor in the first direction. A set of the first conductor, the second conductor, and the third conductor surrounds the first region.