公开(公告)号：US20230189517A1

公开(公告)日：2023-06-15

申请号：US17897733

申请日：2022-08-29

Applicant: Kioxia Corporation

Inventor： Hiroyuki YAMASAKI ,  Hiroshi MATSUMOTO ,  Masahisa SONODA ,  Kiyomitsu YOSHIDA

IPC: H01L27/11524 ,  H01L27/11519 ,  H01L27/11565 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11556

CPC classification number: H01L27/11524 ,  H01L27/11519 ,  H01L27/11565 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11556

Abstract: A semiconductor device includes a plurality of first electrode films stacked in a first direction and electrically isolated from each other; a plurality of semiconductor members extending in the first direction through the plurality of first electrode films; a first conductive film including a first surface and connected to the plurality of semiconductor members on the first surface; a first insulating film spaced from the first conductive film on a second surface of the first conductive film opposite to the first surface; a first edge member disposed in an edge area that surrounds an element area including the first electrode film, the semiconductor member, and the first conductive film; and a conductive first plug provided between the first edge member and the element area in the edge area and is in contact with the first insulating film.

公开(公告)号：US20230395497A1

公开(公告)日：2023-12-07

申请号：US18176431

申请日：2023-02-28

Applicant: Kioxia Corporation

Inventor： Hiroyuki YAMASAKI ,  Masayoshi TAGAMI

IPC: H01L23/528 ,  H01L23/522 ,  H10B80/00 ,  H01L25/18 ,  H10B41/20 ,  H10B43/20 ,  H10B41/10 ,  H10B43/10

CPC classification number: H01L23/5283 ,  H01L23/5226 ,  H10B80/00 ,  H10B43/10 ,  H10B41/20 ,  H10B43/20 ,  H10B41/10 ,  H01L25/18

Abstract: According to one embodiment, a semiconductor storage device includes a first chip, a second chip, and a third chip. In the third chip, a first conductive film is above a first stacked body. The first conductive film extends across the first stacked body when viewed from a stacking direction. A first plug extends in the stacking direction and connects the first conductive film and a second conductive film. The first electrode is connected to the second conductive film. In the second chip, a third conductive film is above a second stacked body. A second plug extends in the stacking direction and connects the third conductive film and the fourth conductive film. The second electrode is connected to the fourth conductive film. The first chip has a first wiring structure therein. The first wiring structure is connected to the second electrode.

公开(公告)号：US20240324216A1

公开(公告)日：2024-09-26

申请号：US18597150

申请日：2024-03-06

Applicant: Kioxia Corporation

Inventor： Hiroyuki YAMASAKI ,  Masayoshi TAGAMI ,  Katsuaki ISOBE

IPC: H10B43/27 ,  H01L25/065 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

CPC classification number: H10B43/27 ,  H01L25/0657 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

Abstract: According to one embodiment, in a semiconductor memory device including a first chip and a second chip. The first chip includes a first stacked body, a first semiconductor film, a second stacked body, a second semiconductor film, a contact plug and a first planar wiring line. The contact plug extends in the third direction between the first stacked body and the second stacked body. The first planar wiring line is disposed on a side opposite to the second chip with respect to the first stacked body, the contact plug, and the second stacked body, the first planar wiring line extending in the first direction and the second direction, covering at least the contact plug, and being connected to the contact plug.

公开(公告)号：US20230082971A1

公开(公告)日：2023-03-16

申请号：US17686108

申请日：2022-03-03

Applicant: Kioxia Corporation

Inventor： Hideo WADA ,  Hiroyuki YAMASAKI ,  Masahisa SONODA ,  Go OIKE

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

Abstract: A semiconductor device includes a first substrate, a first insulating film disposed on the first substrate, and a semiconductor layer disposed on the first insulating film. The semiconductor device further includes a metal layer with a first portion and a second portion. The first portion is disposed on the semiconductor layer, and the second portion includes a bonding pad and is disposed on the first insulating film without the semiconductor layer interposed between the second portion and the first insulating film.