公开(公告)号：US20250107074A1

公开(公告)日：2025-03-27

申请号：US18829236

申请日：2024-09-09

Applicant: Kioxia Corporation

Inventor： Yusuke MUTO ,  Kazuhiro KATONO ,  Tomoki HARADA ,  Akifumi GAWASE

IPC: H10B12/00

Abstract: A semiconductor device includes a first electrode, a first oxide semiconductor in contact with the first electrode at one end of the first oxide semiconductor, the first oxide semiconductor extending in a first direction that intersects with a surface of the first electrode, a first insulator surrounding a side surface of the first oxide semiconductor, a first conductor surrounding at least a part of a side surface of the first insulator, a second conductor in contact with another end of the first oxide semiconductor, a third conductor on the second conductor, and a fourth conductor on the third conductor. The third conductor and the fourth conductor include a first metallic element, and the second conductor and the third conductor include oxygen.

公开(公告)号：US20240098962A1

公开(公告)日：2024-03-21

申请号：US18165595

申请日：2023-02-07

Applicant: Kioxia Corporation

Inventor： Daisuke WATANABE ,  Akifumi GAWASE ,  Takeshi IWASAKI ,  Kazuhiro KATONO ,  Yusuke MUTO ,  Yusuke MIKI ,  Akinori KIMURA

IPC: H10B10/00 ,  H01L29/786

CPC classification number: H10B10/125 ,  H01L29/78693

Abstract: A semiconductor device including a first electrode, a second electrode, an oxide semiconductor disposed between the first electrode and the second electrode, and a first oxide layer containing a predetermined element, oxygen, and an additional element and disposed between the first electrode and the oxide semiconductor, wherein the predetermined element is at least one of tantalum, boron, hafnium, silicon, zirconium, or niobium, and the additional element is at least one of phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.

公开(公告)号：US20240324179A1

公开(公告)日：2024-09-26

申请号：US18599234

申请日：2024-03-08

Applicant: Kioxia Corporation

Inventor： Yusuke MUTO ,  Masaya TODA ,  Yuta SAITO ,  Kazuhiro KATONO ,  Akifumi GAWASE ,  Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Masaya NAKATA ,  Takuma DOI ,  Kenichiro TORATANI

IPC: H10B12/00

CPC classification number: H10B12/33 ,  H10B12/05

Abstract: The semiconductor device includes a substrate, an oxide semiconductor layer spaced from the substrate in a first direction intersecting with a surface of the substrate, a first wiring opposed to a part of the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the first wiring, a second wiring electrically connected to one end in the first direction of the oxide semiconductor layer, and a first insulating layer disposed on a surface on one side and a surface on the other side in a second direction intersecting with the first direction of the second wiring. The second wiring contains a first metallic element, and the first insulating layer contains the first metallic element and oxygen (O).

公开(公告)号：US20240074324A1

公开(公告)日：2024-02-29

申请号：US18456397

申请日：2023-08-25

Applicant: Kioxia Corporation

Inventor： Rina NOMOTO ,  Hiroyuki KANAYA ,  Yusuke MUTO ,  Takeshi IWASAKI

IPC: H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H10B61/00 ,  H10N50/85 ,  G11C11/1673 ,  G11C11/1675

Abstract: According to one embodiment, a magnetic device includes a layered body with a first magnetic layer, a second magnetic layer, and a first non-magnetic layer between the first magnetic body and the second magnetic body. A side wall layer covers at least a side wall of the first non-magnetic body of the layered body and includes at least one first substance chosen from silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and at least one second substance chosen from arsenic, tellurium, antimony, bismuth, and germanium.