公开(公告)号：US20240084456A1

公开(公告)日：2024-03-14

申请号：US18332117

申请日：2023-06-09

Applicant: Kioxia Corporation

Inventor： Kazuhiro KATONO ,  Kazuhiro MATSUO ,  Yusuke MIKI ,  Kenichiro TORATANI ,  Akifumi GAWASE

IPC: C23C16/52 ,  C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  H01L21/66

CPC classification number: C23C16/52 ,  C23C16/407 ,  C23C16/45565 ,  C23C16/4584 ,  H01L21/02565 ,  H01L21/0262 ,  H01L22/20 ,  H01L21/02381

Abstract: In one embodiment, a film forming apparatus includes a chamber configured to load a substrate, a stage configured to support the substrate, and a gas supplier configured to supply a gas into the chamber to form a film on the substrate. The device further includes a first detector configured to detect a first value that varies depending on at least pressure of a first portion above the stage in the chamber, and a controller configured to control a process of forming the film on the substrate based on the first value.

公开(公告)号：US20250098248A1

公开(公告)日：2025-03-20

申请号：US18828277

申请日：2024-09-09

Applicant: Kioxia Corporation

Inventor： Masaya NAKATA ,  Kota TAKAHASHI ,  Yusuke MIKI ,  Takuma DOI ,  Kazuhiro MATSUO ,  Akifumi GAWASE ,  Kenichiro TORATANI

IPC: H01L29/26 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3213 ,  H01L29/66

Abstract: A semiconductor device manufacturing method of embodiments includes: forming a first conductive film containing indium on a substrate; forming a first insulating film; forming a second conductive film; forming a second insulating film; forming an opening penetrating the second insulating film, the second conductive film, and the first insulating film to reach the first conductive film; forming a third insulating film in the opening so as to be in contact with bottom and side surfaces of the opening; removing the third insulating film at a bottom of the opening to expose the first conductive film at the bottom of the opening; performing a first treatment using a first gas containing silicon or a second treatment using a second gas containing oxygen; and forming a semiconductor film in the opening without exposing the substrate to an atmosphere with a pressure equal to or more than atmospheric pressure.

公开(公告)号：US20240098962A1

公开(公告)日：2024-03-21

申请号：US18165595

申请日：2023-02-07

Applicant: Kioxia Corporation

Inventor： Daisuke WATANABE ,  Akifumi GAWASE ,  Takeshi IWASAKI ,  Kazuhiro KATONO ,  Yusuke MUTO ,  Yusuke MIKI ,  Akinori KIMURA

IPC: H10B10/00 ,  H01L29/786

CPC classification number: H10B10/125 ,  H01L29/78693

Abstract: A semiconductor device including a first electrode, a second electrode, an oxide semiconductor disposed between the first electrode and the second electrode, and a first oxide layer containing a predetermined element, oxygen, and an additional element and disposed between the first electrode and the oxide semiconductor, wherein the predetermined element is at least one of tantalum, boron, hafnium, silicon, zirconium, or niobium, and the additional element is at least one of phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.