公开(公告)号：US20200295284A1

公开(公告)日：2020-09-17

申请号：US16673116

申请日：2019-11-04

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Yong-Hoon Kim ,  Muhammad Ejaz Khan ,  Juho Lee

IPC: H01L51/05 ,  G11C11/39 ,  H01L51/00 ,  H01L51/10

Abstract: A quantum hybridization negative differential resistance device having negative differential resistance (NDR) under a low voltage condition using a nanowire based on an organic-inorganic hybrid halide perovskite, and a circuit thereof are provided. The quantum hybridization negative differential resistance device includes a channel formed of an organic-inorganic hybrid halide perovskite crystal and electrodes formed of its inorganic framework and is connected to opposite ends of the channel.

公开(公告)号：US11094901B2

公开(公告)日：2021-08-17

申请号：US16673116

申请日：2019-11-04

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Yong-Hoon Kim ,  Muhammad Ejaz Khan ,  Juho Lee

IPC: H01L51/05 ,  G11C11/39 ,  H01L51/00 ,  H01L51/10 ,  B82Y10/00

Abstract: A quantum hybridization negative differential resistance device having negative differential resistance (NDR) under a low voltage condition using a nanowire based on an organic-inorganic hybrid halide perovskite, and a circuit thereof are provided. The quantum hybridization negative differential resistance device includes a channel formed of an organic-inorganic hybrid halide perovskite crystal and electrodes formed of its inorganic framework and is connected to opposite ends of the channel.