公开(公告)号：US20210049316A1

公开(公告)日：2021-02-18

申请号：US16891602

申请日：2020-06-03

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Yong-Hoon Kim ,  Han Seul Kim ,  Juho Lee

IPC: G06F30/398

Abstract: A method of simulating a non-equilibrium electronic structure of a nanodevice including receiving region information and applied voltage information of each of a channel, first and second electrodes based on information on first principle and upper approximation method and information on an atomic structure, classifying wave functions generated through the first principle and upper approximation method into each region of the channel, first and second electrodes based on spatial distribution, defining Fermi-Dirac distribution function depending on an electrochemical potential of each of the channel, first and second electrodes based on the classified region information and the applied voltage information, calculating a non-equilibrium electron density using the Fermi-Dirac distribution function corresponding to the region information of each of the channel, first and second electrodes and the wave functions of the classified regions, and acquiring non-equilibrium electronic structure information based on the calculated non-equilibrium electron density, and an apparatus thereof are provided.

公开(公告)号：US20200295284A1

公开(公告)日：2020-09-17

申请号：US16673116

申请日：2019-11-04

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Yong-Hoon Kim ,  Muhammad Ejaz Khan ,  Juho Lee

IPC: H01L51/05 ,  G11C11/39 ,  H01L51/00 ,  H01L51/10

Abstract: A quantum hybridization negative differential resistance device having negative differential resistance (NDR) under a low voltage condition using a nanowire based on an organic-inorganic hybrid halide perovskite, and a circuit thereof are provided. The quantum hybridization negative differential resistance device includes a channel formed of an organic-inorganic hybrid halide perovskite crystal and electrodes formed of its inorganic framework and is connected to opposite ends of the channel.

公开(公告)号：US11094901B2

公开(公告)日：2021-08-17

申请号：US16673116

申请日：2019-11-04

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Yong-Hoon Kim ,  Muhammad Ejaz Khan ,  Juho Lee

IPC: H01L51/05 ,  G11C11/39 ,  H01L51/00 ,  H01L51/10 ,  B82Y10/00

Abstract: A quantum hybridization negative differential resistance device having negative differential resistance (NDR) under a low voltage condition using a nanowire based on an organic-inorganic hybrid halide perovskite, and a circuit thereof are provided. The quantum hybridization negative differential resistance device includes a channel formed of an organic-inorganic hybrid halide perovskite crystal and electrodes formed of its inorganic framework and is connected to opposite ends of the channel.