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    Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors
    1.
    发明申请
    Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors 有权
    薄膜晶体管，制造薄膜晶体管的方法以及包括薄膜晶体管的半导体器件

    公开(公告)号：US20110227064A1

    公开(公告)日：2011-09-22

    申请号：US13064366

    申请日：2011-03-22

    申请人： Kyung-Bae Park ,  Myung-Kwan Ryu ,  Jong-Baek Seon ,  Sang-Yoon Lee ,  Bon-Won Koo

    发明人： Kyung-Bae Park ,  Myung-Kwan Ryu ,  Jong-Baek Seon ,  Sang-Yoon Lee ,  Bon-Won Koo

    IPC分类号： H01L29/12 ,  H01L21/04

    CPC分类号： H01L29/7869 ,  H01L29/4908

    摘要： Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.

    摘要翻译： 薄膜晶体管，包括设置在漏电极和源电极之间的半导体沟道; 以及栅极绝缘层，其设置在所述半导体沟道和栅电极之间，其中所述半导体沟道包括第一金属氧化物，所述栅极绝缘层包括第二金属氧化物，并且所述第二金属氧化物的至少一种金属至少与 第一金属氧化物的一种金属，薄膜晶体管的制造方法以及包括薄膜晶体管的半导体器件。

    Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors
    2.
    发明授权
    Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors 有权
    薄膜晶体管，制造薄膜晶体管的方法以及包括薄膜晶体管的半导体器件

    公开(公告)号：US09564531B2

    公开(公告)日：2017-02-07

    申请号：US13064366

    申请日：2011-03-22

    申请人： Kyung-Bae Park ,  Myung-Kwan Ryu ,  Jong-Baek Seon ,  Sang-Yoon Lee ,  Bon-Won Koo

    发明人： Kyung-Bae Park ,  Myung-Kwan Ryu ,  Jong-Baek Seon ,  Sang-Yoon Lee ,  Bon-Won Koo

    IPC分类号： H01L29/786 ,  H01L29/49

    CPC分类号： H01L29/7869 ,  H01L29/4908

    摘要： Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.

    摘要翻译： 薄膜晶体管，包括设置在漏电极和源电极之间的半导体沟道; 以及栅极绝缘层，其设置在所述半导体沟道和栅电极之间，其中所述半导体沟道包括第一金属氧化物，所述栅极绝缘层包括第二金属氧化物，并且所述第二金属氧化物的至少一种金属至少与 第一金属氧化物的一种金属，薄膜晶体管的制造方法以及包括薄膜晶体管的半导体器件。

    Oxide semiconductor transistor and method of manufacturing the same
    10.
    发明申请
    Oxide semiconductor transistor and method of manufacturing the same 有权
    氧化物半导体晶体管及其制造方法

    公开(公告)号：US20090206332A1

    公开(公告)日：2009-08-20

    申请号：US12320701

    申请日：2009-02-02

    申请人： Kyoung-Seok Son ,  Tae-Sang Kim ,  Jang-Yeon Kwon ,  Ji-Sim Jung ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Byung-Wook Yoo

    发明人： Kyoung-Seok Son ,  Tae-Sang Kim ,  Jang-Yeon Kwon ,  Ji-Sim Jung ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Byung-Wook Yoo

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78648

    摘要： An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.

    摘要翻译： 氧化物半导体薄膜晶体管（TFT）及其制造方法。 氧化物半导体TFT包括布置在氧化物半导体沟道层和第一栅极之间的第一栅极绝缘层和布置在沟道层和第二栅极之间的第二栅极绝缘层。 第一和第二栅极绝缘层由不同的材料制成并且具有不同的厚度。 优选地，第二栅极绝缘层是氧化硅并且比优选为氮化硅的第一栅极绝缘层更薄。 氧化物半导体是指氧化锌，氧化锡，Ga-In-Zn氧化物，In-Zn氧化物，In-Sn氧化物，氧化锌，氧化锡，Ga-In-Zn氧化物，In- 氧化锌和氧化铟锡。