公开(公告)号：US08114704B2

公开(公告)日：2012-02-14

申请号：US12379856

申请日：2009-03-03

Applicant: Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

Inventor： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

IPC: H01L51/40

CPC classification number: H01L51/0533

Abstract: Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.

Abstract translation: 本文公开了一种用于制造有机薄膜晶体管的方法，包括通过一锅反应用自组装单层（SAM）形成化合物处理栅极绝缘层和源极/漏极的表面，以及有机薄膜 通过该方法制造的薄膜晶体管。 根据示例实施例，栅极绝缘层和源极/漏极的表面处理可以通过单个工艺在单个容器中进行。

公开(公告)号：US20100200842A1

公开(公告)日：2010-08-12

申请号：US12656685

申请日：2010-02-12

Applicant: Jeong-il Park ,  Byung-Wook Yoo ,  Do-hwan Kim ,  Sang-Yoon Lee ,  Bang-lin Lee ,  Eun-jeong Jeong

Inventor： Jeong-il Park ,  Byung-Wook Yoo ,  Do-hwan Kim ,  Sang-Yoon Lee ,  Bang-lin Lee ,  Eun-jeong Jeong

IPC: H01L51/30 ,  C07D249/04 ,  C07F7/02 ,  B32B9/00 ,  B32B17/06 ,  B32B15/04 ,  B32B3/10 ,  B05D3/00 ,  B05D3/04 ,  B05D3/06

CPC classification number: H01L51/102 ,  B82Y30/00 ,  H01L51/0023 ,  H01L51/0512 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/31504 ,  Y10T428/31678

Abstract: Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.

Abstract translation: 公开了一种表面改性剂，其包括在一个末端具有乙炔基的化合物，使用表面改性剂制造的层压结构，该层压结构体的制造方法和包含该层压结构的晶体管。

公开(公告)号：US08847206B2

公开(公告)日：2014-09-30

申请号：US12656685

申请日：2010-02-12

Applicant: Jeong-il Park ,  Byung-wook Yoo ,  Do-hwan Kim ,  Sang-yoon Lee ,  Bang-lin Lee ,  Eun-jeong Jeong

Inventor： Jeong-il Park ,  Byung-wook Yoo ,  Do-hwan Kim ,  Sang-yoon Lee ,  Bang-lin Lee ,  Eun-jeong Jeong

IPC: H01L29/72

CPC classification number: H01L51/102 ,  B82Y30/00 ,  H01L51/0023 ,  H01L51/0512 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/31504 ,  Y10T428/31678

Abstract: Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.

Abstract translation: 公开了一种表面改性剂，其包括在一个末端具有乙炔基的化合物，使用表面改性剂制造的层压结构，该层压结构体的制造方法和包含该层压结构的晶体管。

公开(公告)号：US08586979B2

公开(公告)日：2013-11-19

申请号：US12320701

申请日：2009-02-02

Applicant: Kyoung-Seok Son ,  Tae-Sang Kim ,  Jang-Yeon Kwon ,  Ji-Sim Jung ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Byung-Wook Yoo

Inventor： Kyoung-Seok Son ,  Tae-Sang Kim ,  Jang-Yeon Kwon ,  Ji-Sim Jung ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Byung-Wook Yoo

IPC: H01L29/10 ,  H01L29/12

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78648

Abstract: An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.

公开(公告)号：US08373158B2

公开(公告)日：2013-02-12

申请号：US12656685

申请日：2010-02-12

Applicant: Jeong-il Park ,  Byung-wook Yoo ,  Do-hwan Kim ,  Sang-yoon Lee ,  Bang-lin Lee ,  Eun-jeong Jeong

Inventor： Jeong-il Park ,  Byung-wook Yoo ,  Do-hwan Kim ,  Sang-yoon Lee ,  Bang-lin Lee ,  Eun-jeong Jeong

IPC: H01L29/72

Abstract: Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.

公开(公告)号：US08263978B2

公开(公告)日：2012-09-11

申请号：US12453295

申请日：2009-05-06

Applicant: Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC classification number: H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

Abstract translation: 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US20120181519A1

公开(公告)日：2012-07-19

申请号：US13348246

申请日：2012-01-11

Applicant: Ji Youl LEE ,  Jong-Won CHUNG ,  Jeong-il PARK ,  Byung-Wook YOO ,  Yong-Wan JIN ,  Sang-Yoon LEE

Inventor： Ji Youl LEE ,  Jong-Won CHUNG ,  Jeong-il PARK ,  Byung-Wook YOO ,  Yong-Wan JIN ,  Sang-Yoon LEE

IPC: H01L51/30 ,  H01L51/40

CPC classification number: H01L51/105 ,  H01L51/0525 ,  H01L51/0545

Abstract: An organic semiconductor device includes an organic semiconductor, an electrode electrically connected to the organic semiconductor, and a self-assembled monolayer positioned between the organic semiconductor and the electrode, the self-assembled monolayer including a monomer having an anchor group at one end and an ionic functional group at another end.

Abstract translation: 有机半导体器件包括有机半导体，电连接到有机半导体的电极和位于有机半导体和电极之间的自组装单层，该自组装单层包括在一端具有锚定基团的单体和 离子官能团。

公开(公告)号：US20100065830A1

公开(公告)日：2010-03-18

申请号：US12379856

申请日：2009-03-03

Applicant: Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong II Park ,  Eun Jeong Jeong

Inventor： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong II Park ,  Eun Jeong Jeong

IPC: H01L51/30 ,  H01L51/40 ,  H01L21/26

CPC classification number: H01L51/0533

Abstract: Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.

Abstract translation: 本文公开了一种用于制造有机薄膜晶体管的方法，包括通过一锅反应用自组装单层（SAM）形成化合物处理栅极绝缘层和源极/漏极的表面，以及有机薄膜 通过该方法制造的薄膜晶体管。 根据示例实施例，栅极绝缘层和源极/漏极的表面处理可以通过单个工艺在单个容器中进行。

公开(公告)号：US20100012942A1

公开(公告)日：2010-01-21

申请号：US12314212

申请日：2008-12-05

Applicant: Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Tae-sang Kim ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Tae-sang Kim ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L21/336 ,  H01L29/786

CPC classification number: H01L29/78624 ,  H01L29/66765

Abstract: Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer.

Abstract translation: 提供可以是多晶硅薄膜晶体管（TFT）及其制造方法。 多晶硅TFT可以包括由多晶硅形成并掺杂低浓度的有源层上的第一多晶硅层; 和在第一多晶硅层上掺杂与第一多晶硅层相同的浓度或具有比第一多晶硅层更高的浓度的第二多晶硅层，其中能够 可以在第一多晶硅层的内端部形成减少漏电流。

公开(公告)号：US20120295407A1

公开(公告)日：2012-11-22

申请号：US13564082

申请日：2012-08-01

Applicant: Byung-wook YOO ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

Inventor： Byung-wook YOO ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

IPC: H01L21/336

CPC classification number: H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

Abstract translation: 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。