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公开(公告)号：US20210124551A1
公开(公告)日：2021-04-29
申请号：US17055105
申请日：2019-05-14
Inventor： Jeong Yun SUN , Jeong Min MOON , Su Seok CHOI , Sungpil RYU , Jihwan JUNG , Kiseok CHANG , Do Yoon KIM , Hyesung CHO
Abstract: The present invention relates to an optical element capable of simultaneously outputting sound from the surface of a display device with an image, the optical element comprising: a first electrode member; a first dielectric elastomer layer disposed on the first electrode member; a second electrode member disposed on the first dielectric elastomer layer; and an optical crystal layer disposed on the second electrode member. Accordingly, in the present invention, image and sound are implemented simultaneously, and thus, it is possible to prevent defects due to mismatching of the image and the sound, and a separate sound system is not required when the display device is manufactured using the optical element, thereby making it possible to reduce components of an electronic product including the display device and reduce the manufacturing cost.
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公开(公告)号：US20210339964A1
公开(公告)日：2021-11-04
申请号：US17270725
申请日：2019-08-23
Applicant: LG Display Co., Ltd.
Inventor： Dahl-Young KHANG , Sung-Hwan HWANG , Jia LEE , Sung-Soo YOON , Su Seok CHOI , Kiseok CHANG , Jeong Min MOON , Soon Shin JUNG , Sungpil RYU , Jihwan JUNG
IPC: B65G47/90 , H01L21/677
Abstract: A transportation head for a microchip transfer device capable of minimizing mechanical and chemical damage to a microchip, a microchip transfer device having same, and a transfer method thereby, and the transportation head includes a head body having a pickup area and a dummy area; a first protruding pin disposed in the pickup area of the head body; and a liquid droplet attached to the first protruding pin.
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Patent Agency Ranking
公开(公告)号：US20230329047A1
公开(公告)日：2023-10-12
申请号：US18132847
申请日：2023-04-10
Applicant: LG Display Co., Ltd.
Inventor： YounGyoung CHANG , WonSang RYU , Youngjin YI , Hanseok LEE , SungSoo SHIN , Jungyul YANG , JungJune KIM , Jihwan JUNG , Soyang CHOI , Yubeen LIM
IPC: H01L29/12 , G09G3/3233
CPC classification number: H10K59/126 , G09G3/3233 , G09G2300/0819 , G09G2300/0861 , G09G2300/0842
Abstract: A thin film transistor substrate can include a first thin film transistor on a substrate, the first thin film transistor including a first active layer and a first gate electrode; and a second thin film transistor on the substrate, the second thin film transistor including a second active layer and a second gate electrode, each of the second active layer and the second gate electrode being located farther away from the substrate than the first active layer and the first gate electrode. Also, the thin film transistor substrate can include a first insulating layer disposed between the first gate electrode and the second active layer; and a first connection electrode connecting the first gate electrode with the second active layer, in which the first connection electrode extends through a first contact hole in the first insulating layer and contacts both of the first gate electrode and the second active layer.
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公开(公告)号：US20210275062A1
公开(公告)日：2021-09-09
申请号：US17270815
申请日：2019-08-23
Applicant: LG Display Co., Ltd.
Inventor： Jin-Woo PARK , Changjin LIM , Soyeon LEE , Su Seok CHOI , Kiseok CHANG , Jeong Min MOON , Soon Shin JUNG , Sungpil RYU , Jihwan JUNG
IPC: A61B5/1455 , A61B5/00
Abstract: A wearable photoluminescence sensor, which is portable and has improved sensitivity and accuracy, and a remote sensing apparatus comprising same, the disclosed wearable photoluminescence sensor includes a reflective support and a semipermeable filter disposed over and under translucent photodiodes, thus allows light of a second wavelength band, having the photoluminescence properties of getting lost or passing through, to be reflected again and thus maximally utilized, and thereby allows sensitivity and accuracy to be improved.
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公开(公告)号：US20200335571A1
公开(公告)日：2020-10-22
申请号：US16759711
申请日：2018-09-12
Inventor： Young-Joo KIM , Hyo-Jun KIM , Jeong Min MOON , Su Seok CHOI , Sungpil RYU , Jihwan JUNG , Kiseok CHANG
Abstract: An organic light emitting diode (OLED) display device includes a thin film transistor substrate including a first substrate, a thin film transistor disposed on the first substrate and a white organic light emitting diode (WOLED) electrically connected to the thin film transistor; a color filter substrate comprising a second substrate that faces the first substrate, and red, green and blue color filters disposed on the second substrate; a quantum dot pattern disposed on the WOLED of the thin film transistor substrate; and a refractive film disposed between the color filter substrate and the thin film transistor substrate provided with the quantum dot pattern.
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公开(公告)号：US20200274217A1
公开(公告)日：2020-08-27
申请号：US16762047
申请日：2018-10-23
Inventor： Byungwook MIN , Hoon Bae KIM , Sung-Eun KIM , Jeong Min MOON , Su Seok CHOI , Sungpil RYU , Jihwan JUNG , Kiseok CHANG
Abstract: The present invention relates to a phase shifter comprising a DGS and a radio communication module comprising the same. The phase shifter comprises: a first substrate; a microstrip formed on the first substrate so as to extend in a first direction; a ground layer disposed with a space on the upper surface of the microstrip and having a defected ground structure (DGS) with a defected pattern formed therein; a second substrate disposed on the ground layer; and a liquid crystal layer disposed in a space between the first substrate and the second substrate, wherein DC voltage is applied between the ground layer and the microstrip.
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公开(公告)号：US20200168768A1
公开(公告)日：2020-05-28
申请号：US16661938
申请日：2019-10-23
Inventor： Kiseok CHANG , Kwang Seob JEONG , Yunchang CHOI , Jihwan JUNG , JeongMin MOON , SoonShin JUNG
Abstract: Provided is a method of manufacturing gallium nitride quantum dots. The method includes the steps of: preparing a gallium precursor solution by heating a mixture prepared by dissolving a gallium halide and an organic ligand in a solvent; heating the gallium precursor solution to obtain a heated gallium precursor solution; hot-injecting a nitrogen precursor into the heated gallium precursor solution at a heating temperature to produce gallium nitride; growing the gallium nitride while maintaining the heating temperature, thereby producing a growth-completed gallium nitride; and cooling a solution including the growth-completed gallium nitride to produce gallium nitride quantum dots in a colloid state.
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