公开(公告)号：US20240032351A1

公开(公告)日：2024-01-25

申请号：US18208644

申请日：2023-06-12

Applicant: LG Display Co., Ltd.

Inventor： Pyungho Choi ,  Hyunseok Na ,  JaeJun Ahn ,  Hyoungsun Park ,  Hyunchyol Shin ,  Seongsoo Cho

IPC: H10K59/126 ,  H01L29/786 ,  H01L29/417 ,  H01L29/423

CPC classification number: H10K59/126 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78672

Abstract: A display apparatus is disclosed. The display apparatus according to the present disclosure may include a substrate including an active area and a non-active area around the active area, a first shield layer disposed on the substrate, a first thin film transistor including a first semiconductor layer on the first shield layer, a first etch stopper on the first semiconductor layer, a second thin film transistor including a second semiconductor layer on the substrate, and a second etch stopper on the second semiconductor layer.

公开(公告)号：US20230255059A1

公开(公告)日：2023-08-10

申请号：US17982322

申请日：2022-11-07

Applicant: LG Display Co., Ltd.

Inventor： Hyunseok Na ,  JaeJun Ahn ,  DongSeok Park ,  Hyoungsun Park ,  Heungso Ku ,  ChangSuk Hyun ,  Sanggil Kim ,  Kyoungjin Ahn ,  Pyungho Choi ,  Hyunchyol Shin ,  Seongsoo Cho

IPC: H01L27/32 ,  H01L51/00

CPC classification number: H01L27/3262 ,  H01L27/3272 ,  H01L51/0097 ,  H01L2251/5338 ,  H01L27/1225

Abstract: An organic light-emitting diode (OLED) display device using hybrid type thin-film transistors (TFTs) is disclosed. The OLED display device includes an etch stopper film on a semiconductor pattern to prevent over etching of the semiconductor pattern located on a lower position and source and drain electrodes are brought in direct contact with the semiconductor pattern while passing through the etch stopper film to prevent malfunction of the TFTs due to surface resistance due to the etch stopper film. Thus, characteristics of the TFTs and process stability are secured.

公开(公告)号：US20240222417A1

公开(公告)日：2024-07-04

申请号：US18451824

申请日：2023-08-17

Applicant: LG Display Co., Ltd.

Inventor： Hyoungsun Park ,  Seongsoo Cho ,  Hyunseok Na ,  Jongsoo Han ,  Sanghak Shin ,  Pyungho Choi ,  Hyunchyol Shin

IPC: H01L27/15 ,  H01L21/02 ,  H01L21/285 ,  H01L21/321 ,  H01L33/10

CPC classification number: H01L27/15 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/28568 ,  H01L21/32115 ,  H01L33/10

Abstract: Disclosed is a display apparatus including a substrate; an insulating layer disposed on the substrate; a wiring layer disposed on the insulating layer; and a side surface protective layer disposed on a side surface of the wiring layer and having an electrical insulation property, wherein the wiring layer has a stack structure in which a plurality of layers are stacked. In this regard, the side surface protective layer covers a side surface of each of at least some of the plurality of layers of the stack structure.

公开(公告)号：US20230284487A1

公开(公告)日：2023-09-07

申请号：US18165300

申请日：2023-02-06

Applicant: LG Display Co., Ltd.

Inventor： Hyunseok Na ,  Pyungho Choi ,  Hyoungsun Park ,  JaeJun Ahn ,  ChangSuk Hyun ,  Jaegeun Kim ,  Seongsoo Cho

IPC: H10K59/126 ,  H10K59/12

CPC classification number: H10K59/126 ,  H10K59/1201

Abstract: An organic light emitting display device including both a polycrystalline semiconductor element and an oxide semiconductor element, and a method of manufacturing the display device are disclosed. In order to solve the damage of an oxide semiconductor pattern during a heat treatment process in the process of forming the oxide semiconductor element, until the process of forming the polycrystalline semiconductor element is completed, after one portion of a connection electrode connecting a polycrystalline semiconductor pattern to source and drain electrodes is formed in advance, then by forming the other portion of the connection electrode for completing the connection between the source and drain electrodes to the polycrystalline semiconductor pattern in the process of forming the oxide semiconductor element, the connection electrode can have a connection node between two edges thereof, and thereby, the performance of the oxide semiconductor element can be improved.