公开(公告)号：US11980066B2

公开(公告)日：2024-05-07

申请号：US18146029

申请日：2022-12-23

Applicant: LG Display Co., Ltd.

Inventor： Hyunseok Na ,  Sanggil Kim ,  JaeJun Ahn ,  Hyoungsun Park ,  ChangSuk Hyun

IPC: H10K59/40 ,  G06F3/041 ,  G06F3/044 ,  H10K50/844 ,  H10K59/121 ,  H10K59/126 ,  H01L27/12 ,  H01L29/786

CPC classification number: H10K59/126 ,  G06F3/0412 ,  G06F3/0443 ,  H10K50/844 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/40 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/78675 ,  H01L29/7869

Abstract: The present disclosure provides a light-emitting display apparatus including a substrate including a first region and a second region, a first thin-film transistor (TFT) disposed in the first region of the substrate and including a first semiconductor pattern, a first gate electrode, a first source electrode, and a first drain electrode, a second TFT disposed in the second region of the substrate and including a second semiconductor pattern, a second gate electrode, a second source electrode, and a second drain electrode, at least one insulating layer between the first semiconductor pattern and the second semiconductor pattern, a first blocking layer below the first semiconductor pattern, and a second blocking layer below the second semiconductor pattern.

公开(公告)号：US20230255059A1

公开(公告)日：2023-08-10

申请号：US17982322

申请日：2022-11-07

Applicant: LG Display Co., Ltd.

Inventor： Hyunseok Na ,  JaeJun Ahn ,  DongSeok Park ,  Hyoungsun Park ,  Heungso Ku ,  ChangSuk Hyun ,  Sanggil Kim ,  Kyoungjin Ahn ,  Pyungho Choi ,  Hyunchyol Shin ,  Seongsoo Cho

IPC: H01L27/32 ,  H01L51/00

CPC classification number: H01L27/3262 ,  H01L27/3272 ,  H01L51/0097 ,  H01L2251/5338 ,  H01L27/1225

Abstract: An organic light-emitting diode (OLED) display device using hybrid type thin-film transistors (TFTs) is disclosed. The OLED display device includes an etch stopper film on a semiconductor pattern to prevent over etching of the semiconductor pattern located on a lower position and source and drain electrodes are brought in direct contact with the semiconductor pattern while passing through the etch stopper film to prevent malfunction of the TFTs due to surface resistance due to the etch stopper film. Thus, characteristics of the TFTs and process stability are secured.