公开(公告)号：US20240107809A1

公开(公告)日：2024-03-28

申请号：US18528571

申请日：2023-12-04

Applicant: LG Display Co., Ltd.

Inventor： Sangsoon Noh ,  Eunsung Kim

IPC: H10K59/121 ,  H10K59/124 ,  H10K59/126

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/124 ,  H10K59/126 ,  H01L29/7869

Abstract: An organic light emitting display device may include a first thin film transistor including a first active layer formed of a first material and includes a first source region, a first channel region, and a first drain region, a first gate electrode and a first source electrode and a first drain electrode, a second thin film transistor including a second active layer formed of a second material and includes a second source region, a second channel region, and a second drain region, a second gate electrode, and a second source electrode and a second drain electrode, a light blocking layer overlapping a lower portion of the second active layer and formed on the same layer as the second capacitor electrode, and a first protrusion pattern and a second protrusion pattern disposed on the same layer as the first gate electrode and overlapping the light blocking layer.

公开(公告)号：US11871616B2

公开(公告)日：2024-01-09

申请号：US17515247

申请日：2021-10-29

Applicant: LG Display Co., Ltd.

Inventor： Sangsoon Noh ,  Eunsung Kim

IPC: H01L27/14 ,  H10K59/121 ,  H10K59/124 ,  H10K59/126 ,  H01L29/786 ,  H01L27/12

CPC classification number: H10K59/1213 ,  H10K59/124 ,  H10K59/126 ,  H10K59/1216 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/7869 ,  H01L29/78633 ,  H01L29/78675

Abstract: An organic light emitting display device may include a first thin film transistor including a first active layer formed of a first material and includes a first source region, a first channel region, and a first drain region, a first gate electrode and a first source electrode and a first drain electrode, a second thin film transistor including a second active layer formed of a second material and includes a second source region, a second channel region, and a second drain region, a second gate electrode, and a second source electrode and a second drain electrode, a light blocking layer overlapping a lower portion of the second active layer and formed on the same layer as the second capacitor electrode, and a first protrusion pattern and a second protrusion pattern disposed on the same layer as the first gate electrode and overlapping the light blocking layer.

公开(公告)号：US10903246B2

公开(公告)日：2021-01-26

申请号：US14629538

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Seongpil Cho ,  Jaehoon Park ,  Sohyung Lee ,  Sangsoon Noh ,  Moonho Park ,  Sungjin Lee ,  Seunghyo Ko ,  Mijin Jeong

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.

公开(公告)号：US12302706B2

公开(公告)日：2025-05-13

申请号：US18211757

申请日：2023-06-20

Applicant: LG Display Co., Ltd.

Inventor： Moonho Park ,  Sangsoon Noh ,  Dongchae Shin ,  Sunyoung Choi ,  Mijin Jeong

IPC: H10K59/121 ,  G06F3/041 ,  G06F3/044 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  H10K59/131 ,  H10K59/40 ,  H10K59/80 ,  G09G3/3233

Abstract: A thin film transistor, in one or more examples, includes a semiconductor layer, an upper gate electrode overlapped with the semiconductor layer, an upper insulating layer disposed between the semiconductor layer and the upper gate electrode, a first lower gate electrode overlapped with the semiconductor layer, a second lower gate electrode disposed between the semiconductor layer and the first lower gate electrode, overlapped with the semiconductor layer, and configured to have a width smaller than that of the upper gate electrode, a first lower insulating layer disposed between the first lower gate electrode and the second lower gate electrode, and a second lower insulating layer disposed between the second lower gate electrode and the semiconductor layer. A display apparatus including a thin film transistor is also disclosed.

公开(公告)号：US20240107805A1

公开(公告)日：2024-03-28

申请号：US18213047

申请日：2023-06-22

Applicant: LG Display Co., Ltd.

Inventor： Mijin Jeong ,  Sangsoon Noh ,  Dongchae Shin ,  Sunyoung Choi ,  Moonho Park

IPC: H10K59/121 ,  H01L27/12

CPC classification number: H10K59/1213 ,  H01L27/1222

Abstract: The present disclosure relates to an organic light emitting display device, and more particularly, to a thin film transistor using an oxide semiconductor material for a plurality of thin film transistors constituting a circuit portion of a sub-pixel and a display panel including the thin film transistor. The plurality of thin film transistors includes a plurality of switching transistors and a driving transistor. Each of the plurality of switching transistors has a first dose, and the driving transistor has a second dose different from the first dose.

公开(公告)号：US20230389380A1

公开(公告)日：2023-11-30

申请号：US18199001

申请日：2023-05-18

Applicant: LG Display Co., Ltd.

Inventor： Dongchae Shin ,  Sangsoon Noh ,  Mijin Jeong

IPC: H10K59/131 ,  H10K59/88 ,  H10K59/121

CPC classification number: H10K59/131 ,  H10K59/88 ,  H10K59/1213

Abstract: Provided is an organic light emitting display device in which a driving thin film transistor (TFT) includes an oxide semiconductor pattern. The driving thin film transistor includes a gate electrode disposed under an oxide semiconductor pattern, and a dummy electrode, a source electrode and a drain electrode over the oxide semiconductor pattern, and the dummy electrode is electrically connected to the source electrode to increase the S-factor of the driving TFT. In addition, the organic light emitting display device of the present disclosure includes a plurality of switching TFTs including an oxide semiconductor pattern, and the plurality of switching TFTs includes a plurality of switching thin film transistors having different distances between the oxide semiconductor pattern and the gate electrode so as to have different threshold voltages.

公开(公告)号：US12250850B2

公开(公告)日：2025-03-11

申请号：US18528571

申请日：2023-12-04

Applicant: LG Display Co., Ltd.

Inventor： Sangsoon Noh ,  Eunsung Kim

IPC: H01L27/14 ,  H10K59/121 ,  H10K59/124 ,  H10K59/126 ,  H01L27/12 ,  H01L29/786

Abstract: An organic light emitting display device may include a first thin film transistor including a first active layer formed of a first material and includes a first source region, a first channel region, and a first drain region, a first gate electrode and a first source electrode and a first drain electrode, a second thin film transistor including a second active layer formed of a second material and includes a second source region, a second channel region, and a second drain region, a second gate electrode, and a second source electrode and a second drain electrode, a light blocking layer overlapping a lower portion of the second active layer and formed on the same layer as the second capacitor electrode, and a first protrusion pattern and a second protrusion pattern disposed on the same layer as the first gate electrode and overlapping the light blocking layer.

公开(公告)号：US20220190079A1

公开(公告)日：2022-06-16

申请号：US17515247

申请日：2021-10-29

Applicant: LG Display Co., Ltd.

Inventor： Sangsoon Noh ,  Eunsung Kim

IPC: H01L27/32

Abstract: An organic light emitting display device may include a first thin film transistor including a first active layer formed of a first material and includes a first source region, a first channel region, and a first drain region, a first gate electrode and a first source electrode and a first drain electrode, a second thin film transistor including a second active layer formed of a second material and includes a second source region, a second channel region, and a second drain region, a second gate electrode, and a second source electrode and a second drain electrode, a light blocking layer overlapping a lower portion of the second active layer and formed on the same layer as the second capacitor electrode, and a first protrusion pattern and a second protrusion pattern disposed on the same layer as the first gate electrode and overlapping the light blocking layer.

公开(公告)号：US10186528B2

公开(公告)日：2019-01-22

申请号：US14628357

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Seongpil Cho ,  Jaehoon Park ,  Sohyung Lee ,  Sangsoon Noh ,  Moonho Park ,  Sungjin Lee ,  Seunghyo Ko ,  Mijin Jeong

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.