公开(公告)号：US11871616B2

公开(公告)日：2024-01-09

申请号：US17515247

申请日：2021-10-29

Applicant: LG Display Co., Ltd.

Inventor： Sangsoon Noh ,  Eunsung Kim

IPC: H01L27/14 ,  H10K59/121 ,  H10K59/124 ,  H10K59/126 ,  H01L29/786 ,  H01L27/12

CPC classification number: H10K59/1213 ,  H10K59/124 ,  H10K59/126 ,  H10K59/1216 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/7869 ,  H01L29/78633 ,  H01L29/78675

Abstract: An organic light emitting display device may include a first thin film transistor including a first active layer formed of a first material and includes a first source region, a first channel region, and a first drain region, a first gate electrode and a first source electrode and a first drain electrode, a second thin film transistor including a second active layer formed of a second material and includes a second source region, a second channel region, and a second drain region, a second gate electrode, and a second source electrode and a second drain electrode, a light blocking layer overlapping a lower portion of the second active layer and formed on the same layer as the second capacitor electrode, and a first protrusion pattern and a second protrusion pattern disposed on the same layer as the first gate electrode and overlapping the light blocking layer.

公开(公告)号：US11063068B2

公开(公告)日：2021-07-13

申请号：US16575917

申请日：2019-09-19

Applicant: LG Display Co., Ltd.

Inventor： JinChae Jeon ,  SoYoung Noh ,  UiJin Chung ,  Eunsung Kim ,  HyunSoo Shin ,  Wonkyung Kim ,  Jeihyun Lee

IPC: H01L27/12

Abstract: A display apparatus includes a substrate having a first substrate, a second substrate, and an inorganic insulating layer between the first substrate and the second substrate. A first buffer layer is on the substrate, wherein the first buffer layer includes n+1 layers, and ‘n’ is 0 or an even number. A first thin film transistor, a second thin film transistor, and a storage capacitor are each on the first buffer layer. The first thin film transistor includes a first active layer formed of a low temperature poly silicon material. The second thin film transistor includes a second active layer formed of an oxide semiconductor material. The storage capacitor includes a first capacitor electrode and a second capacitor electrode.

公开(公告)号：US09954014B2

公开(公告)日：2018-04-24

申请号：US15245944

申请日：2016-08-24

Applicant: LG DISPLAY CO., LTD.

Inventor： Soyoung Noh ,  Jinchae Jeon ,  Seungchan Choi ,  Junho Lee ,  Youngjang Lee ,  Sungbin Ryu ,  Kitae Kim ,  Bokyoung Cho ,  Jeanhan Yoon ,  Uijin Chung ,  Jihye Lee ,  Eunsung Kim ,  Hyunsoo Shin ,  Kyeongju Moon ,  Hyojin Kim ,  Wonkyung Kim ,  Jeihyun Lee ,  Soyeon Je

IPC: H01L27/12 ,  H01L27/32 ,  H01L49/02 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L28/60 ,  H01L29/41733 ,  H01L29/78675 ,  H01L29/7869

Abstract: A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs, and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.

公开(公告)号：US20240107809A1

公开(公告)日：2024-03-28

申请号：US18528571

申请日：2023-12-04

Applicant: LG Display Co., Ltd.

Inventor： Sangsoon Noh ,  Eunsung Kim

IPC: H10K59/121 ,  H10K59/124 ,  H10K59/126

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/124 ,  H10K59/126 ,  H01L29/7869

Abstract: An organic light emitting display device may include a first thin film transistor including a first active layer formed of a first material and includes a first source region, a first channel region, and a first drain region, a first gate electrode and a first source electrode and a first drain electrode, a second thin film transistor including a second active layer formed of a second material and includes a second source region, a second channel region, and a second drain region, a second gate electrode, and a second source electrode and a second drain electrode, a light blocking layer overlapping a lower portion of the second active layer and formed on the same layer as the second capacitor electrode, and a first protrusion pattern and a second protrusion pattern disposed on the same layer as the first gate electrode and overlapping the light blocking layer.

公开(公告)号：US12250850B2

公开(公告)日：2025-03-11

申请号：US18528571

申请日：2023-12-04

Applicant: LG Display Co., Ltd.

Inventor： Sangsoon Noh ,  Eunsung Kim

IPC: H01L27/14 ,  H10K59/121 ,  H10K59/124 ,  H10K59/126 ,  H01L27/12 ,  H01L29/786

Abstract: An organic light emitting display device may include a first thin film transistor including a first active layer formed of a first material and includes a first source region, a first channel region, and a first drain region, a first gate electrode and a first source electrode and a first drain electrode, a second thin film transistor including a second active layer formed of a second material and includes a second source region, a second channel region, and a second drain region, a second gate electrode, and a second source electrode and a second drain electrode, a light blocking layer overlapping a lower portion of the second active layer and formed on the same layer as the second capacitor electrode, and a first protrusion pattern and a second protrusion pattern disposed on the same layer as the first gate electrode and overlapping the light blocking layer.

公开(公告)号：US20220190079A1

公开(公告)日：2022-06-16

申请号：US17515247

申请日：2021-10-29

Applicant: LG Display Co., Ltd.

Inventor： Sangsoon Noh ,  Eunsung Kim

IPC: H01L27/32

Abstract: An organic light emitting display device may include a first thin film transistor including a first active layer formed of a first material and includes a first source region, a first channel region, and a first drain region, a first gate electrode and a first source electrode and a first drain electrode, a second thin film transistor including a second active layer formed of a second material and includes a second source region, a second channel region, and a second drain region, a second gate electrode, and a second source electrode and a second drain electrode, a light blocking layer overlapping a lower portion of the second active layer and formed on the same layer as the second capacitor electrode, and a first protrusion pattern and a second protrusion pattern disposed on the same layer as the first gate electrode and overlapping the light blocking layer.