公开(公告)号：US20230081823A1

公开(公告)日：2023-03-16

申请号：US17902655

申请日：2022-09-02

Applicant: LG Display Co., Ltd.

Inventor： SoYoung NOH ,  Seunghyo KO ,  KyeongJu MOON

IPC: H01L27/12

Abstract: A thin film transistor substrate can include a thin film transistor on a base substrate, and a capacitor connected to the thin film transistor. The thin film transistor can include an active layer on the base substrate, and a gate electrode spaced apart from the active layer to at least partially overlap the active layer. The capacitor can include a first capacitor electrode disposed on a same layer as the active layer of the thin film transistor, and a second capacitor electrode disposed on a same layer as the gate electrode and overlapping with the first capacitor electrode. The first capacitor electrode can include an active material layer made of a same material as the active layer of the thin film transistor, and a metal-containing layer disposed on the active material layer. The metal-containing layer can include a metal different than the active material layer and can absorb hydrogen.

公开(公告)号：US20230079262A1

公开(公告)日：2023-03-16

申请号：US17941257

申请日：2022-09-09

Applicant: LG DISPLAY CO., LTD.

Inventor： SoYoung NOH ,  Seunghyo KO

IPC: H01L29/786 ,  H01L29/66

Abstract: A thin film transistor, a fabricating method of the thin film transistor and a display device comprising the thin film transistor are provided, in which the thin film transistor includes an active layer on a substrate, and a gate electrode spaced apart from the active layer and at least partially overlapped with the active layer, wherein the active layer includes fluorine (F) and has a first surface in a direction opposite to the substrate, the active layer has a concentration gradient of fluorine (F) in which a concentration gradient of fluorine (F) along a direction parallel with the first surface is smaller than that of fluorine (F) along a direction perpendicular to the first surface.

公开(公告)号：US20190006521A1

公开(公告)日：2019-01-03

申请号：US15794986

申请日：2017-10-26

Applicant: LG Display Co., Ltd.

Inventor： SoYoung NOH ,  YoungJang LEE ,  HyoJin KIM ,  Hyuk JI

IPC: H01L29/786 ,  H01L27/12

Abstract: Provided are a display device and a method for manufacturing the same. The display device includes: a connection source electrode and a connection drain electrode connected to a first source electrode a the first drain electrode, respectively by penetrating an isolation insulating layer and a second interlayer dielectric layer to enhance a characteristic of an element and reliability of the display device.

公开(公告)号：US20220199835A1

公开(公告)日：2022-06-23

申请号：US17689890

申请日：2022-03-08

Applicant: LG Display Co., Ltd.

Inventor： SoYoung NOH ,  YoungJang LEE ,  HyoJin KIM ,  Hyuk JI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/417

Abstract: Provided are a display device and a method for manufacturing the same. The display device includes: a connection source electrode and a connection drain electrode connected to a first source electrode a the first drain electrode, respectively by penetrating an isolation insulating layer and a second interlayer dielectric layer to enhance a characteristic of an element and reliability of the display device.

公开(公告)号：US20200058797A1

公开(公告)日：2020-02-20

申请号：US16663275

申请日：2019-10-24

Applicant: LG Display Co., Ltd.

Inventor： SoYoung NOH ,  YoungJang LEE ,  HyoJin KIM ,  Hyuk JI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/417

Abstract: Provided are a display device and a method for manufacturing the same. The display device includes: a connection source electrode and a connection drain electrode connected to a first source electrode a the first drain electrode, respectively by penetrating an isolation insulating layer and a second interlayer dielectric layer to enhance a characteristic of an element and reliability of the display device.

公开(公告)号：US20180033849A1

公开(公告)日：2018-02-01

申请号：US15652955

申请日：2017-07-18

Applicant: LG DISPLAY CO., LTD.

Inventor： SoYoung NOH ,  JinChae JEON ,  HyunSoo SHIN

IPC: H01L27/32 ,  H01L51/00

CPC classification number: H01L27/3272 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3223 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869 ,  H01L51/0097 ,  H01L2227/323 ,  H01L2251/5338

Abstract: Different types of thin film transistors are disposed on the same flexible substrate and an organic light emitting display using the same includes a display area and a non-display area; a first buffer layer over an entire surface of the flexible substrate; a driving transistor on the buffer layer in the display area, the driving transistor including a polycrystalline silicon (LIPS) layer, a first gate electrode, a first source electrode, and a first drain electrode; a capacitor electrode on the first source electrode of the driving transistor and forming a storage capacitor together with the first source electrode; a switching transistor in the display area to be spaced apart from the driving transistor; and a dummy electrode on the switching transistor, the dummy electrode formed of the same material as the capacitor electrode, and disposed on the same plane as the capacitor.