METHOD FOR MANUFACTURING SOLAR CELL AND DOPANT LAYER THEREOF
    1.
    发明申请
    METHOD FOR MANUFACTURING SOLAR CELL AND DOPANT LAYER THEREOF 有权
    制造太阳能电池及其掺杂层的方法

    公开(公告)号:US20130344647A1

    公开(公告)日:2013-12-26

    申请号:US13840618

    申请日:2013-03-15

    Abstract: A method for manufacturing a dopant layer of a solar cell according to an embodiment of the invention includes: ion-implanting a dopant to a substrate; and heat-treating for an activation of the dopant. In the heat-treating for the activation, the substrate is heat-treated at a first temperature after an anti-out-diffusion film is formed at a temperature lower than the first temperature under a first gas atmosphere.

    Abstract translation: 根据本发明实施例的用于制造太阳能电池的掺杂剂层的方法包括:将掺杂剂离子注入基板; 和用于激活掺杂剂的热处理。 在激活的热处理中,在第一气体气氛下,在比第一温度低的温度下形成防扩散膜之后,在第一温度下对基板进行热处理。

    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 有权
    太阳能电池及其制造方法

    公开(公告)号:US20130298975A1

    公开(公告)日:2013-11-14

    申请号:US13644287

    申请日:2012-10-04

    Abstract: A solar cell according to an embodiment includes a semiconductor substrate; a first dopant layer formed at one surface of the semiconductor substrate; and a first electrode electrically connected to the first dopant layer. At least a part of the first dopant layer includes a pre-amorphization element, and a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.

    Abstract translation: 根据实施例的太阳能电池包括半导体衬底; 形成在所述半导体衬底的一个表面处的第一掺杂剂层; 以及电连接到第一掺杂剂层的第一电极。 第一掺杂剂层的至少一部分包括预非晶化元件,并且第一掺杂剂层的一部分中的非淀粉化元素的浓度不同于第一掺杂剂层的另一部分中的预非晶化元素的浓度 掺杂剂层。

    SOLAR CELL
    4.
    发明申请
    SOLAR CELL 审中-公开
    太阳能电池

    公开(公告)号:US20170047456A1

    公开(公告)日:2017-02-16

    申请号:US15334611

    申请日:2016-10-26

    Abstract: A solar cell can include a substrate of a first conductive type; an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type; a back surface field region which is positioned at a back surface opposite the front surface of the substrate; a front passivation region including a plurality of layers which are sequentially positioned on the emitter region; a back passivation region including a plurality of layers which are sequentially positioned on the back surface field region; a front electrode part which passes through the front passivation region and is connected to the emitter region, wherein the front electrode part comprises a plurality of front electrodes that are apart from each other and a front bus bar connecting the plurality of front electrodes; a back electrode part which passes through the back passivation region and is connected to the back surface field region, wherein the back electrode part comprises a plurality of back electrodes that are apart from each other and a back bus bar connecting the plurality of back electrodes, wherein the front passivation region includes a first aluminum oxide layer and the back passivation region includes a second aluminum oxide layer.

    Abstract translation: 太阳能电池可以包括第一导电类型的衬底; 位于所述基板的前表面并具有不同于所述第一导电类型的第二导电类型的发射极区域; 位于与所述基板的前表面相对的后表面的背面场区域; 包括依次位于发射极区域上的多个层的前钝化区域; 包括依次位于所述背面场区域上的多个层的背面钝化区域; 前电极部分,其穿过前钝化区域并连接到发射极区域,其中前电极部分包括彼此分开的多个前电极和连接多个前电极的前汇流条; 背面电极部分,其穿过所述背部钝化区域并连接到所述背面场区域,其中所述背面电极部分包括彼此分开的多个背部电极和连接所述多个背面电极的后部母线, 其中所述前钝化区包括第一氧化铝层,所述后钝化区包括第二氧化铝层。

    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
    5.
    发明申请
    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号:US20160380130A1

    公开(公告)日:2016-12-29

    申请号:US15259356

    申请日:2016-09-08

    Abstract: A method for manufacturing a solar cell, the method including: preparing a semiconductor substrate; ion-implanting a pre-amorphization element to form an amorphous layer at at least a part of one surface of the semiconductor substrate; ion-implanting a first conductive type dopant to the one surface of the semiconductor substrate to form a first dopant layer; and forming a first electrode electrically connected to the first dopant layer, wherein a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.

    Abstract translation: 一种制造太阳能电池的方法,所述方法包括:制备半导体衬底; 离子注入预非晶化元件以在半导体衬底的一个表面的至少一部分上形成非晶层; 将第一导电型掺杂剂离子注入到半导体衬底的一个表面以形成第一掺杂剂层; 以及形成与所述第一掺杂剂层电连接的第一电极,其中所述第一掺杂剂层的一部分中的所述预非晶化元素的浓度不同于所述第一掺杂剂层的另一部分中的所述预非晶化元素的浓度。

    SOLAR CELL
    6.
    发明申请
    SOLAR CELL 审中-公开

    公开(公告)号:US20160111560A1

    公开(公告)日:2016-04-21

    申请号:US14974407

    申请日:2015-12-18

    Abstract: A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type, a front passivation region including a plurality of layers which are sequentially positioned on the emitter region, a back passivation region which is positioned on a back surface opposite the front surface of the substrate and includes three layers, a plurality of front electrodes which pass through the front passivation region and are connected to the emitter region, and at least one back electrode which passes through the back passivation region and is connected to the substrate.

    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
    7.
    发明申请
    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号:US20150357509A1

    公开(公告)日:2015-12-10

    申请号:US14831615

    申请日:2015-08-20

    Abstract: A method for manufacturing a solar cell includes forming a first dielectric layer on a second surface opposite a first surface of a substrate; forming second dielectric layers respectively on an emitter region and the first dielectric layer; forming a third dielectric layer on the second dielectric layer that is positioned on the emitter region; forming a hydrogenated silicon oxide layer on the third dielectric layer; forming a first electrode on the emitter region and connected to the emitter region; and forming a second electrode on the second surface of the substrate and connected to the substrate, wherein the first surface of the substrate has first and second textured surfaces, and wherein the first textured surface includes a plurality of first protrusions and a plurality of first depressions and the second textured surface includes a plurality of second protrusions and a plurality of second depressions.

    Abstract translation: 太阳能电池的制造方法包括在与基板的第一面相反的第二面上形成第一电介质层, 在发射极区域和第一介电层上分别形成第二介电层; 在位于所述发射极区域上的所述第二电介质层上形成第三电介质层; 在所述第三电介质层上形成氢化氧化硅层; 在发射极区域上形成第一电极并连接到发射极区域; 以及在所述基板的所述第二表面上形成第二电极并连接到所述基板,其中所述基板的所述第一表面具有第一和第二纹理表面,并且其中所述第一纹理表面包括多个第一突起和多个第一凹陷 并且第二织纹表面包括多个第二突起和多个第二凹陷。

    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
    8.
    发明申请
    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 有权
    太阳能电池及其制造方法

    公开(公告)号:US20150179837A1

    公开(公告)日:2015-06-25

    申请号:US14478841

    申请日:2014-09-05

    Abstract: A solar cell is discussed. The solar cell includes a semiconductor substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type, which is positioned at a front surface of the semiconductor substrate, a front passivation part positioned on a front surface of the emitter region, a front electrode part which passes through the front passivation part and is electrically connected to the emitter region, a back passivation part positioned on a back surface of the semiconductor substrate, and a back electrode part which passes through the back passivation part and is electrically connected to the semiconductor substrate. The front passivation part and the back passivation part each include a silicon oxide layer. One of the front passivation part and the back passivation part includes an aluminum oxide layer.

    Abstract translation: 讨论太阳能电池。 太阳能电池包括位于半导体衬底的前表面的第一导电类型的半导体衬底,与第一导电类型相反的第二导电类型的发射极区域,位于第一导电类型的前表面上的前钝化部分 发射极区域,穿过前钝化部分并与发射极区域电连接的前电极部分,位于半导体衬底背面的背面钝化部分和穿过背部钝化部分的背面电极部分, 电连接到半导体衬底。 前钝化部分和后钝化部分都包括氧化硅层。 前钝化部分和后钝化部分之一包括氧化铝层。

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