Etchant for etching metal wiring layers and method for forming thin film transistor by using the same
    1.
    发明申请
    Etchant for etching metal wiring layers and method for forming thin film transistor by using the same 有权
    用于蚀刻金属布线层的蚀刻剂及使用该薄膜晶体管的方法

    公开(公告)号:US20030107023A1

    公开(公告)日:2003-06-12

    申请号:US10293565

    申请日:2002-11-14

    Abstract: The present invention discloses an etchant for etching at least two different metal layers, the etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3COnull). The present invention also discloses a method of fabricating a metal wiring on a substrate, the method comprising forming a first metal layer on a substrate, forming a second metal layer on the first metal layer, and simultaneously etching the first metal layer and the second metal layer with an etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3COnull)

    Abstract translation: 本发明公开了用于蚀刻至少两种不同金属层的蚀刻剂,所述蚀刻剂包括过氧化氢(H 2 O 2)和羧酸,羧酸盐和乙酰基(CH 3 CO-)之一。 本发明还公开了一种在基板上制造金属布线的方法,该方法包括在基板上形成第一金属层,在第一金属层上形成第二金属层,同时蚀刻第一金属层和第二金属 含有过氧化氢(H 2 O 2)和羧酸,羧酸盐和乙酰基(CH 3 CO-)之一的蚀刻剂的层,

    LCD panel with low resistance interconnection
    2.
    发明申请
    LCD panel with low resistance interconnection 有权
    液晶面板具有低电阻互连

    公开(公告)号:US20020057395A1

    公开(公告)日:2002-05-16

    申请号:US09983734

    申请日:2001-10-25

    CPC classification number: G02F1/13458 G02F1/136286 G02F2001/136295

    Abstract: A thin film transistor (TFT) array and an LCD (Liquid Crystal Display) panel made therefrom where at least one of the gate lines, the source electrodes, the drain electrodes and the data lines is formed of a copper alloy having a copper portion and a metal portion doped in the copper portion. The metal portion in the copper alloy includes a metal whose heat of metal oxide formation energy is greater than that of copper. The metal may be one selected from Ti (Titanium), Cr (Chromium), Ta (Tantalum), Mo (Molybdenum), In (Indium), Sn (Tin) and Al (Aluminum). The copper alloy has a high acid resistance, a high chemical resistance, and a high tolerance for moisture. The use of the copper alloy allows formation of a low resistance interconnection of copper that has a high electrical conductivity.

    Abstract translation: 一种薄膜晶体管(TFT)阵列和由其制成的LCD(液晶显示器)面板,其中至少一个栅极线,源电极,漏极和数据线由具有铜部分的铜合金形成, 在铜部分中掺杂的金属部分。 铜合金中的金属部分包括其金属氧化物形成能的热量大于铜的热量的金属。 金属可以是选自Ti(钛),Cr(铬),Ta(钽),Mo(钼),In(铟),Sn(Tin)和Al(铝)中的一种。 铜合金具有高耐酸性,高耐化学性和高耐湿性。 使用铜合金允许形成具有高导电性的铜的低电阻互连。

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