Abstract:
The present invention discloses an etchant for etching at least two different metal layers, the etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3COnull). The present invention also discloses a method of fabricating a metal wiring on a substrate, the method comprising forming a first metal layer on a substrate, forming a second metal layer on the first metal layer, and simultaneously etching the first metal layer and the second metal layer with an etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3COnull)
Abstract translation:本发明公开了用于蚀刻至少两种不同金属层的蚀刻剂,所述蚀刻剂包括过氧化氢(H 2 O 2)和羧酸,羧酸盐和乙酰基(CH 3 CO-)之一。 本发明还公开了一种在基板上制造金属布线的方法,该方法包括在基板上形成第一金属层,在第一金属层上形成第二金属层,同时蚀刻第一金属层和第二金属 含有过氧化氢(H 2 O 2)和羧酸,羧酸盐和乙酰基(CH 3 CO-)之一的蚀刻剂的层,
Abstract:
A thin film transistor (TFT) array and an LCD (Liquid Crystal Display) panel made therefrom where at least one of the gate lines, the source electrodes, the drain electrodes and the data lines is formed of a copper alloy having a copper portion and a metal portion doped in the copper portion. The metal portion in the copper alloy includes a metal whose heat of metal oxide formation energy is greater than that of copper. The metal may be one selected from Ti (Titanium), Cr (Chromium), Ta (Tantalum), Mo (Molybdenum), In (Indium), Sn (Tin) and Al (Aluminum). The copper alloy has a high acid resistance, a high chemical resistance, and a high tolerance for moisture. The use of the copper alloy allows formation of a low resistance interconnection of copper that has a high electrical conductivity.