Etchant for etching metal wiring layers and method for forming thin film transistor by using the same
    1.
    发明申请
    Etchant for etching metal wiring layers and method for forming thin film transistor by using the same 有权
    用于蚀刻金属布线层的蚀刻剂及使用该薄膜晶体管的方法

    公开(公告)号:US20030107023A1

    公开(公告)日:2003-06-12

    申请号:US10293565

    申请日:2002-11-14

    Abstract: The present invention discloses an etchant for etching at least two different metal layers, the etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3COnull). The present invention also discloses a method of fabricating a metal wiring on a substrate, the method comprising forming a first metal layer on a substrate, forming a second metal layer on the first metal layer, and simultaneously etching the first metal layer and the second metal layer with an etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3COnull)

    Abstract translation: 本发明公开了用于蚀刻至少两种不同金属层的蚀刻剂,所述蚀刻剂包括过氧化氢(H 2 O 2)和羧酸,羧酸盐和乙酰基(CH 3 CO-)之一。 本发明还公开了一种在基板上制造金属布线的方法,该方法包括在基板上形成第一金属层,在第一金属层上形成第二金属层,同时蚀刻第一金属层和第二金属 含有过氧化氢(H 2 O 2)和羧酸,羧酸盐和乙酰基(CH 3 CO-)之一的蚀刻剂的层,

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