METHOD OF FORMING ION SENSORS
    1.
    发明申请

    公开(公告)号:US20210164932A1

    公开(公告)日:2021-06-03

    申请号:US17267772

    申请日:2019-08-16

    Abstract: A method for manufacturing a sensor includes etching an insulator layer disposed over a substrate to define an opening exposing a sensor surface of a sensor disposed on the substrate, a native oxide forming on the sensor surface; sputtering the sensor surface with a noble gas to at least partially remove the native oxide from the sensor surface; and annealing the sensor surface in a hydrogen atmosphere.

Patent Agency Ranking