公开(公告)号：US20080237868A1

公开(公告)日：2008-10-02

申请号：US11693033

申请日：2007-03-29

申请人： Lawrence A. Clevenger ,  Matthew E. Colburn ,  William F. Landers ,  Wai-Kin LI

发明人： Lawrence A. Clevenger ,  Matthew E. Colburn ,  William F. Landers ,  Wai-Kin LI

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L23/562 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit design and a method of fabrication and, more particularly, a semiconductor structure having an ultra narrow crack stop for use in multilevel level devices and a method of making the same. The structure includes a first dielectric layer having a first connection connecting to an underlying interconnect and a second dielectric layer having a second connection connecting to the first connection. A stop gap structure extends through the first dielectric layer and the second dielectric layer, and has a width of about less than 1 um.

摘要翻译： 一种集成电路设计和制造方法，更具体地说，具有用于多电平电平装置的超窄裂缝停止的半导体结构及其制造方法。 该结构包括具有连接到底层互连的第一连接的第一介电层和具有连接到第一连接的第二连接的第二介电层。 止挡间隙结构延伸穿过第一介电层和第二介电层，并且具有大约小于1μm的宽度。

公开(公告)号：US20120301828A1

公开(公告)日：2012-11-29

申请号：US13118013

申请日：2011-05-27

申请人： Seiichiro TACHIBANA ,  Kazumi NODA ,  Masaki OHASHI ,  Takeshi KINSHO ,  Wu-Song HUANG ,  Dario L. GOLDFARB ,  Wai-Kin LI ,  Martin GLODDE

发明人： Seiichiro TACHIBANA ,  Kazumi NODA ,  Masaki OHASHI ,  Takeshi KINSHO ,  Wu-Song HUANG ,  Dario L. GOLDFARB ,  Wai-Kin LI ,  Martin GLODDE

IPC分类号： G03F7/004 ,  F21V9/04

CPC分类号： G03F7/038 ,  G03F7/0046 ,  G03F7/091

摘要： A composition comprising a polymer comprising repeat units selected from formulae (1) to (4), an aromatic ring-containing polymer, a near-infrared absorbing dye, and a solvent is used to form a near-infrared absorptive film. R1, R7, R9, and R14 are H, methyl, fluorine or trifluoromethyl, R2 to R6 are H, F, trifluoromethyl, —C(CF3)2OR16, alkyl or alkoxy, at least one of R2 to R6 being F or a fluorinated group, R16, R8 and R13 are H or a monovalent organic group, L1 is a single bond or —C(═O)O—, m is 0 or 1, L2 is a di- or trivalent hydrocarbon group, n is 1 or 2, R10 to R12 are H, hydroxyl, halogen or a monovalent organic group, and R15 is a fluorinated C2-C15 hydrocarbon group.

摘要翻译： 包含含有选自式（1）至（4）的重复单元，含芳族环的聚合物，近红外吸收染料和溶剂的聚合物的组合物用于形成近红外吸收膜。 R1，R7，R9和R14是H，甲基，氟或三氟甲基，R2至R6是H，F，三氟甲基，-C（CF3）2OR16，烷基或烷氧基，R2至R6中的至少一个为F或氟化 基团R 16，R 8和R 13为H或一价有机基团，L 1为单键或-C（= O）O-，m为0或1，L 2为二价或三价烃基，n为1或 2，R 10〜R 12为H，羟基，卤素或一价有机基团，R 15为氟代C 2 -C 15烃基。

公开(公告)号：US20110183491A1

公开(公告)日：2011-07-28

申请号：US13080326

申请日：2011-04-05

申请人： Wai-Kin LI ,  Yi-Hsiung Lin ,  Gerald Matusiewicz

发明人： Wai-Kin LI ,  Yi-Hsiung Lin ,  Gerald Matusiewicz

IPC分类号： H01L21/762

CPC分类号： H01L23/5226 ,  H01L21/76808 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31678 ,  H01L2924/00

摘要： A semiconductor structure and method of manufacturing the semiconductor structure, and more particularly to a semiconductor structure having reduced metal line resistance and a method of manufacturing the same in back end of line (BEOL) processes. The method includes forming a first trench extending to a lower metal layer Mx+1 and forming a second trench remote from the first trench. The method further includes filling the first trench and the second trench with conductive material. The conductive material in the second trench forms a vertical wiring line extending orthogonally and in electrical contact with an upper wiring layer and electrically isolated from lower metal layers including the lower metal layer Mx+1. The vertical wiring line decreases a resistance of a structure.

摘要翻译： 半导体结构和半导体结构的制造方法，更具体地说，涉及具有降低的金属线电阻的半导体结构及其后端（BEOL）工艺的制造方法。 该方法包括形成延伸到下金属层Mx + 1并形成远离第一沟槽的第二沟槽的第一沟槽。 该方法还包括用导电材料填充第一沟槽和第二沟槽。 第二沟槽中的导电材料形成垂直布线，其垂直布线并与上布线层电接触并与包括下金属层Mx + 1的下金属层电隔离。 垂直布线减小了结构的电阻。