公开(公告)号：US20150381283A1

公开(公告)日：2015-12-31

申请号：US14752696

申请日：2015-06-26

Applicant: Luxtera, Inc.

Inventor： Subal Sahni ,  Kam-Yan Hon ,  Attila Mekis ,  Gianlorenzo Masini ,  Lieven Verslegers

IPC: H04B10/548 ,  H04B10/2581 ,  H04B10/50

CPC classification number: H04B10/548 ,  G02F1/025

Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.

Abstract translation: 公开了具有高模态重叠的硅基光学相位调制器的方法和系统，并且可以包括在具有肋波导的光学调制器中，其中十字形耗尽区域分离四个交替掺杂的部分：在一端接收光信号 的光调制器，通过施加调制电压来调制所接收的光信号，并将调制的光信号从调制器的相对端传送出去。 调制器可以在可以在互补金属氧化物半导体（CMOS）裸片中的硅光子学上集成电路中。 光学模式可以在十字形耗尽区域的中心。 四个交替掺杂的部分可以包括：浅深度p区域，浅深度n区域，深p区域和深n区域。 浅深度p区域可以沿着调制器的长度周期性地电耦合到深p区域。

公开(公告)号：US11049851B2

公开(公告)日：2021-06-29

申请号：US16001135

申请日：2018-06-06

Applicant: Luxtera, Inc.

Inventor： Kam-Yan Hon ,  Subal Sahni ,  Gianlorenzo Masini ,  Attila Mekis

IPC: H01L25/16 ,  F21V8/00 ,  G02B6/12

Abstract: Methods and systems for selectively illuminated integrated photodetectors with configured launching and adaptive junction profile for bandwidth improvement may include a photonic chip comprising an input waveguide and a photodiode. The photodiode comprises an absorbing region with a p-doped region on a first side of the absorbing region and an n-doped region on a second side of the absorbing region. An optical signal is received in the absorbing region via the input waveguide, which is offset to one side of a center axis of the absorbing region; an electrical signal is generated based on the received optical signal. The first side of the absorbing region may be p-doped. P-doped and n-doped regions may alternate on the first and second sides of the absorbing region along the length of the photodiode. The absorbing region may comprise germanium, silicon, silicon/germanium, or similar material that absorbs light of a desired wavelength.

公开(公告)号：US20200162166A1

公开(公告)日：2020-05-21

申请号：US16518916

申请日：2019-07-22

Applicant: Luxtera, Inc.

Inventor： Subal Sahni ,  Kam-Yan Hon ,  Attila Mekis ,  Gianlorenzo Masini ,  Lieven Verslegers

IPC: H04B10/548 ,  G02F1/025

Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.

公开(公告)号：US20180358342A1

公开(公告)日：2018-12-13

申请号：US16001135

申请日：2018-06-06

Applicant: Luxtera, Inc.

Inventor： Kam-Yan Hon ,  Subal Sahni ,  Gianlorenzo Masini ,  Attila Mekis

IPC: H01L25/16 ,  F21V8/00 ,  G02B6/12

CPC classification number: H01L25/167 ,  G02B6/0006 ,  G02B6/12004 ,  G02B6/12007 ,  G02B2006/12111 ,  G02B2006/12126

Abstract: Methods and systems for selectively illuminated integrated photodetectors with configured launching and adaptive junction profile for bandwidth improvement may include a photonic chip comprising an input waveguide and a photodiode. The photodiode comprises an absorbing region with a p-doped region on a first side of the absorbing region and an n-doped region on a second side of the absorbing region. An optical signal is received in the absorbing region via the input waveguide, which is offset to one side of a center axis of the absorbing region; an electrical signal is generated based on the received optical signal. The first side of the absorbing region may be p-doped. P-doped and n-doped regions may alternate on the first and second sides of the absorbing region along the length of the photodiode. The absorbing region may comprise germanium, silicon, silicon/germanium, or similar material that absorbs light of a desired wavelength.

公开(公告)号：US09541775B2

公开(公告)日：2017-01-10

申请号：US14217743

申请日：2014-03-18

Applicant: Luxtera, Inc.

Inventor： Ali Ayazi ,  Kam-Yan Hon ,  Gianlorenzo Masini

IPC: H04B10/40 ,  G02F1/025 ,  G02F1/225 ,  H04B10/50 ,  G02F1/21

CPC classification number: G02F1/025 ,  G02F1/2255 ,  G02F1/2257 ,  G02F2001/212 ,  H04B10/501

Abstract: Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.

Abstract translation: 用于低电压集成硅高速调制器的方法和系统可以包括包括第一和第二光波导和两个光学移相器的光调制器，其中两个光学移相器中的每一个可以包括具有水平截面的pn结和 垂直截面和光信号被传送到第一光波导。 然后光信号的一部分可以耦合到第二光波导。 可以使用光学移相器来调制波导中的至少一个光信号的相位。 相位调制光信号的一部分可以耦合在两个波导之间，由此产生来自调制器的两个输出信号。 调制信号可以被施加到可以包括反向偏置的移相器。

公开(公告)号：US10546963B2

公开(公告)日：2020-01-28

申请号：US14926916

申请日：2015-10-29

Applicant: Luxtera, Inc.

Inventor： Kam-Yan Hon ,  Gianlorenzo Masini ,  Subal Sahni

IPC: H01L31/0224

Abstract: Methods and systems for germanium-on-silicon photodetectors without germanium layer contacts are disclosed and may include, in a semiconductor die having a photodetector, where the photodetector includes an n-type silicon layer, a germanium layer, a p-type silicon layer, and a metal contact on each of the n-type silicon layer and the p-type silicon layer: receiving an optical signal, absorbing the optical signal in the germanium layer, generating an electrical signal from the absorbed optical signal, and communicating the electrical signal out of the photodetector via the n-type silicon layer and the p-type silicon layer. The photodetector may include a horizontal or vertical junction double heterostructure where the germanium layer is above the n-type and p-type silicon layers. An intrinsically-doped silicon layer may be below the germanium layer between the n-type silicon layer and the p-type silicon layer. A top portion of the germanium layer may be p-doped.

公开(公告)号：US20190165200A1

公开(公告)日：2019-05-30

申请号：US16184169

申请日：2018-11-08

Applicant: Luxtera, Inc.

Inventor： Gianlorenzo Masini ,  Kam-Yan Hon ,  Subal Sahni ,  Attila Mekis

IPC: H01L31/107 ,  H01L31/0232 ,  H01L31/02

Abstract: Systems and methods for a focused field avalanche photodiode (APD) may include an absorbing layer, an anode, a cathode, an N-doped layer, a P-doped layer, and a multiplication region between the N-doped layer and the P-doped layer. Oxide interfaces are located at top and bottom surfaces of the anode, cathode, N-doped layer, P-doped layer, and multiplication region. The APD may absorb an optical signal in the absorbing layer to generate carriers, and direct them to a center of the cathode using doping profiles in the N-doped layer and the P-doped layer that vary in a direction perpendicular to the top and bottom surfaces. The doping profiles in the N-doped layer and the P-doped layer may have a peak concentration midway between the oxide interfaces, or the N-doped layer may have a peak concentration midway between the oxide interfaces while the P-doped layer may have a minimum concentration there.

公开(公告)号：US20190074907A1

公开(公告)日：2019-03-07

申请号：US16036447

申请日：2018-07-16

Applicant: Luxtera, Inc.

Inventor： Subal Sahni ,  Kam-Yan Hon ,  Attila Mekis ,  Gianlorenzo Masini ,  Lieven Verslegers

IPC: H04B10/548 ,  G02F1/025

CPC classification number: H04B10/548 ,  G02F1/025

Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.

公开(公告)号：US10027420B2

公开(公告)日：2018-07-17

申请号：US14752696

申请日：2015-06-26

Applicant: Luxtera, Inc.

Inventor： Subal Sahni ,  Kam-Yan Hon ,  Attila Mekis ,  Gianlorenzo Masini ,  Lieven Verslegers

IPC: G02F1/225 ,  H04B10/00 ,  H04B10/548 ,  G02F1/025

Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.

公开(公告)号：US20160155884A1

公开(公告)日：2016-06-02

申请号：US14926916

申请日：2015-10-29

Applicant: Luxtera, Inc.

Inventor： Kam-Yan Hon ,  Gianlorenzo Masini ,  Subal Sahni

IPC: H01L31/11 ,  H01L31/0352 ,  H01L31/028

Abstract: Methods and systems for germanium-on-silicon photodetectors without germanium layer contacts are disclosed and may include, in a semiconductor die having a photodetector, where the photodetector includes an n-type silicon layer, a germanium layer, a p-type silicon layer, and a metal contact on each of the n-type silicon layer and the p-type silicon layer: receiving an optical signal, absorbing the optical signal in the germanium layer, generating an electrical signal from the absorbed optical signal, and communicating the electrical signal out of the photodetector via the n-type silicon layer and the p-type silicon layer. The photodetector may include a horizontal or vertical junction double heterostructure where the germanium layer is above the n-type and p-type silicon layers. An intrinsically-doped silicon layer may be below the germanium layer between the n-type silicon layer and the p-type silicon layer. A top portion of the germanium layer may be p-doped.

Abstract translation: 公开了没有锗层接触的锗硅上光电探测器的方法和系统，并且可以包括在具有光电检测器的半导体管芯中，其中光电检测器包括n型硅层，锗层，p型硅层， 以及在n型硅层和p型硅层中的每一个上的金属接触：接收光信号，吸收锗层中的光信号，从吸收的光信号产生电信号，并传送电信号 通过n型硅层和p型硅层离开光电检测器。 光电检测器可以包括水平或垂直结双异质结构，其中锗层在n型和p型硅层之上。 本征掺杂的硅层可以在n型硅层和p型硅层之间的锗层的下方。 锗层的顶部可以是p掺杂的。