Layout design for fanout patterns in self-aligned double patterning process

    公开(公告)号:US10497566B1

    公开(公告)日:2019-12-03

    申请号:US16012608

    申请日:2018-06-19

    Abstract: A circuit structure comprises a plurality of first conducting lines extending in a first direction, the first conducting lines having a first pitch in a second direction orthogonal to the first direction; a plurality of linking lines extending in the second direction, the linking lines having a second pitch in the first direction, the second pitch being greater than the first pitch; and a plurality of connection structures connecting respective first conducting lines for current flow to respective linking lines, the connection structures each including a plurality of segments extending in the first direction, segments in the plurality of segments having a transition pitch in the second direction relative to adjacent segments in the plurality of segments greater than or equal to the first pitch, and less than the second pitch.

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