PATTERNING METHOD
    2.
    发明申请
    PATTERNING METHOD 审中-公开
    绘图方法

    公开(公告)号:US20160196968A1

    公开(公告)日:2016-07-07

    申请号:US14590526

    申请日:2015-01-06

    Abstract: A patterning method is provided. A photoresist layer is formed on a target layer. An etching resistance layer is formed on the photoresist layer. The photoresist layer is exposed to light and therefore a photo acid is generated in first regions of the photoresist layer. The photoresist layer is developed to remove second regions of the photoresist layer. It is noted that the etching resistance layer is non-photosensitive but reactive to the generated photo acid.

    Abstract translation: 提供了图案化方法。 在目标层上形成光致抗蚀剂层。 在光致抗蚀剂层上形成耐蚀性层。 光致抗蚀剂层暴露于光,因此在光致抗蚀剂层的第一区域中产生光酸。 显影光致抗蚀剂层以除去光致抗蚀剂层的第二区域。 注意,耐蚀刻层是非光敏的,但对所产生的光酸具有反应性。

    OVERLAY MARK
    3.
    发明申请

    公开(公告)号:US20250096147A1

    公开(公告)日:2025-03-20

    申请号:US18470421

    申请日:2023-09-20

    Abstract: An overlay mark includes a previous layer mark and a current layer mark. The previous layer mark includes a plurality of first work zones. Each first working zone includes a first sub-region and a second sub-region, wherein the first sub-region is closer to a center point of the previous layer mark than the second sub-region. The previous layer mark includes a first mark and an auxiliary mark respectively in the first sub-region and the second sub-region of each first working zone. The current layer mark includes a plurality of second working zones. Each second working zone includes a first sub-region and a second sub-region. The current layer mark includes a second mark disposed in the second sub-region of each second working zone. The overlay mark may be applied in the process of manufacturing a 3D NAND flash memory with high capacity and high performance.

    Layout pattern and photomask including the same
    6.
    发明授权
    Layout pattern and photomask including the same 有权
    布局图案和光掩模包括相同

    公开(公告)号:US09442366B2

    公开(公告)日:2016-09-13

    申请号:US14588013

    申请日:2014-12-31

    CPC classification number: G03F1/38 G03F1/36

    Abstract: A layout pattern and a photomask including the layout pattern are provided. The layout pattern includes a plurality of main patterns and at least one auxiliary pattern. The main patterns are arranged in parallel to one another and extend in a first direction. The at least one auxiliary pattern is located between two outermost main patterns and connects the two outermost main patterns. The at least one auxiliary pattern is arranged in a second direction. The second direction is different from the first direction.

    Abstract translation: 提供布局图案和包括布局图案的光掩模。 布局图案包括多个主图案和至少一个辅助图案。 主图案彼此平行布置并沿第一方向延伸。 至少一个辅助图案位于两个最外面的主图案之间并且连接两个最外面的主图案。 所述至少一个辅助图案被布置在第二方向上。 第二个方向与第一个方向不同。

    LAYOUT PATTERN AND PHOTOMASK INCLUDING THE SAME
    7.
    发明申请
    LAYOUT PATTERN AND PHOTOMASK INCLUDING THE SAME 有权
    布局图案和照片,包括它们

    公开(公告)号:US20160187768A1

    公开(公告)日:2016-06-30

    申请号:US14588013

    申请日:2014-12-31

    CPC classification number: G03F1/38 G03F1/36

    Abstract: A layout pattern and a photomask including the layout pattern are provided. The layout pattern includes a plurality of main patterns and at least one auxiliary pattern. The main patterns are arranged in parallel to one another and extend in a first direction. The at least one auxiliary pattern is located between two outermost main patterns and connects the two outermost main patterns. The at least one auxiliary pattern is arranged in a second direction. The second direction is different from the first direction.

    Abstract translation: 提供布局图案和包括布局图案的光掩模。 布局图案包括多个主图案和至少一个辅助图案。 主图案彼此平行布置并沿第一方向延伸。 至少一个辅助图案位于两个最外面的主图案之间并且连接两个最外面的主图案。 所述至少一个辅助图案被布置在第二方向上。 第二个方向与第一个方向不同。

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