公开(公告)号：US10153263B2

公开(公告)日：2018-12-11

申请号：US14861933

申请日：2015-09-22

Applicant: MACRONIX International Co., Ltd.

Inventor： Chin-Cheng Yang ,  Chia-Hua Lin ,  Chih-Hao Huang

IPC: H01L27/02 ,  H01L29/06 ,  G06F17/50

Abstract: A structure of a patterned material layer including separate patterns arranged in rows and columns is described. The separate patterns in at least one row including the outmost row each have a larger dimension in the column direction than the separate patterns in the other rows. The separate patterns in at least one column including the outmost column each have a larger dimension in the row direction than the separate patterns in the other columns.

公开(公告)号：US20160196968A1

公开(公告)日：2016-07-07

申请号：US14590526

申请日：2015-01-06

Applicant: MACRONIX International Co., Ltd.

Inventor： Chia-Hua Lin ,  Tien-Chu Yang ,  Chih-Hao Huang

IPC: H01L21/027 ,  G03F7/32 ,  G03F7/38 ,  G03F7/20

CPC classification number: G03F7/38 ,  G03F7/094 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0271 ,  H01L21/0273

Abstract: A patterning method is provided. A photoresist layer is formed on a target layer. An etching resistance layer is formed on the photoresist layer. The photoresist layer is exposed to light and therefore a photo acid is generated in first regions of the photoresist layer. The photoresist layer is developed to remove second regions of the photoresist layer. It is noted that the etching resistance layer is non-photosensitive but reactive to the generated photo acid.

Abstract translation: 提供了图案化方法。 在目标层上形成光致抗蚀剂层。 在光致抗蚀剂层上形成耐蚀性层。 光致抗蚀剂层暴露于光，因此在光致抗蚀剂层的第一区域中产生光酸。 显影光致抗蚀剂层以除去光致抗蚀剂层的第二区域。 注意，耐蚀刻层是非光敏的，但对所产生的光酸具有反应性。

公开(公告)号：US20250096147A1

公开(公告)日：2025-03-20

申请号：US18470421

申请日：2023-09-20

Applicant: MACRONIX International Co., Ltd.

Inventor： Chiung Jung Tu ,  Chih-Hao Huang ,  Yu-Lin Liu ,  Chin-Cheng Yang

IPC: H01L23/544

Abstract: An overlay mark includes a previous layer mark and a current layer mark. The previous layer mark includes a plurality of first work zones. Each first working zone includes a first sub-region and a second sub-region, wherein the first sub-region is closer to a center point of the previous layer mark than the second sub-region. The previous layer mark includes a first mark and an auxiliary mark respectively in the first sub-region and the second sub-region of each first working zone. The current layer mark includes a plurality of second working zones. Each second working zone includes a first sub-region and a second sub-region. The current layer mark includes a second mark disposed in the second sub-region of each second working zone. The overlay mark may be applied in the process of manufacturing a 3D NAND flash memory with high capacity and high performance.

公开(公告)号：US20170084597A1

公开(公告)日：2017-03-23

申请号：US14861933

申请日：2015-09-22

Applicant: MACRONIX International Co., Ltd.

Inventor： Chin-Cheng Yang ,  Chia-Hua Lin ,  Chih-Hao Huang

IPC: H01L27/02 ,  G06F17/50 ,  H01L29/06

CPC classification number: H01L27/0207 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70616 ,  G06F17/5072 ,  H01L29/0657

Abstract: A structure of a patterned material layer including separate patterns arranged in rows and columns is described. The separate patterns in at least one row including the outmost row each have a larger dimension in the column direction than the separate patterns in the other rows. The separate patterns in at least one column including the outmost column each have a larger dimension in the row direction than the separate patterns in the other columns.

公开(公告)号：US11043417B2

公开(公告)日：2021-06-22

申请号：US16439499

申请日：2019-06-12

Applicant: MACRONIX International Co., Ltd.

Inventor： Wei-Hung Wang ,  Chih-Hao Huang

IPC: H01L21/768 ,  H01L21/027 ,  H01L23/482 ,  H01L23/528

Abstract: A line structure for fan-out circuit having a dense-line area and a fan-out area is provided. The line structure includes a plurality of dense lines arranged in the dense-line area parallel to a first direction, a plurality of pads disposed in the fan-out area, and a plurality of connecting lines arranged in the fan-out area parallel to a second direction. The connecting lines respectively connect one of the dense lines with one of the pads, wherein at least one of the connecting lines is a wavy line.

公开(公告)号：US09442366B2

公开(公告)日：2016-09-13

申请号：US14588013

申请日：2014-12-31

Applicant: MACRONIX International Co., Ltd.

Inventor： Chiung-Jung Tu ,  Chih-Hao Huang

IPC: G03F1/38 ,  G03F1/36

CPC classification number: G03F1/38 ,  G03F1/36

Abstract: A layout pattern and a photomask including the layout pattern are provided. The layout pattern includes a plurality of main patterns and at least one auxiliary pattern. The main patterns are arranged in parallel to one another and extend in a first direction. The at least one auxiliary pattern is located between two outermost main patterns and connects the two outermost main patterns. The at least one auxiliary pattern is arranged in a second direction. The second direction is different from the first direction.

Abstract translation: 提供布局图案和包括布局图案的光掩模。 布局图案包括多个主图案和至少一个辅助图案。 主图案彼此平行布置并沿第一方向延伸。 至少一个辅助图案位于两个最外面的主图案之间并且连接两个最外面的主图案。 所述至少一个辅助图案被布置在第二方向上。 第二个方向与第一个方向不同。

公开(公告)号：US20160187768A1

公开(公告)日：2016-06-30

申请号：US14588013

申请日：2014-12-31

Applicant: MACRONIX International Co., Ltd.

Inventor： Chiung-Jung Tu ,  Chih-Hao Huang

IPC: G03F1/42

CPC classification number: G03F1/38 ,  G03F1/36

Abstract: A layout pattern and a photomask including the layout pattern are provided. The layout pattern includes a plurality of main patterns and at least one auxiliary pattern. The main patterns are arranged in parallel to one another and extend in a first direction. The at least one auxiliary pattern is located between two outermost main patterns and connects the two outermost main patterns. The at least one auxiliary pattern is arranged in a second direction. The second direction is different from the first direction.

Abstract translation: 提供布局图案和包括布局图案的光掩模。 布局图案包括多个主图案和至少一个辅助图案。 主图案彼此平行布置并沿第一方向延伸。 至少一个辅助图案位于两个最外面的主图案之间并且连接两个最外面的主图案。 所述至少一个辅助图案被布置在第二方向上。 第二个方向与第一个方向不同。